Radiation Hardened, High Speed, Low Power, Current Feedback Op Amp with Output Disable
The Radiation Hardened is a high speed, low power current feedback amplifier built with Intersil's proprietary complementary bipolar UHF-1 (DI, bonded wafer) process. This technology provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices are QML approved and are manufactured and screened in full compliance with MIL-PRF-38535. This amplifier features a TTL/CMOS compatible DISABLE control, pin 10, which when pulled low, reduces the supply current and forces the output into a high impedance state. This allows easy implementation of simple, low power multiplexing circuits in redundant spacecraft designs. The wide bandwidth and fast slew rate make these devices ideal for pulse and video amplifier and routing applications. The high output current and disable feature provide the perfect combination needed for A/D driver/multiplexer circuits. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-98518. A "hot-link" is provided on our homepage for downloading. http://www.intersil.com/spacedefense/space.htm
· Electrically Screened to SMD # 5962-98518· QML Qualified per MIL-PRF-38535 Requirements· Radiation Environment - Total Dose. x 105 RAD(Si) - SEL. None (Bonded Wafer DI Process)· Wide 3dB Bandwidth (Typ). 360MHz· High Slew Rate (Typ). 1000V/µS· High Output Current (Typ). 60mA· Low Supply Current (Typ). 5.9mA· Output Enable/Disable Time (Typ). 180ns/35ns· Upgrade for CLC410/411
· Multiplexing Flash A/D Drivers· High Speed Signal Switching and Routing· Pulse and Video Amplifiers· Wideband Amplifiers· Imaging Systems
ORDERING NUMBER 5962F9851801VXC INTERNAL MKT. NUMBER HS9-1410RH-Q TEMP. RANGE (oC) to 125
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Copyright © Intersil Corporation 1999
DIE DIMENSIONS: 59 mils x 59 mils x 19 mils ±1 mil ± 25.4µm) INTERFACE MATERIALS: Glassivation: Type: Nitride Thickness: 4kÅ ±0.5kÅ Top Metallization: Type: Metal 1: AICu(2%)/TiW Thickness: Metal 8kÅ ±0.4kÅ Type: Metal 2: AICu(2%) Thickness: Metal 16kÅ ±0.8kÅ Substrate: UHF-1, Bonded Wafer, DI ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): Floating (Recommend Connection to V-) ADDITIONAL INFORMATION: Transistor Count: 75
NOTE: This pad is not bonded out on packaged units. Die users may set a GND reference, via this pad, to ensure the TTL compatibility of the DIS input when using asymmetrical supplies (e.g. = 0V).
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com