Details, datasheet, quote on part number: 5962F9854001VXC
DescriptionRadiation Hardened Inverting, Octal, Three-state Buffer/line Driver
CompanyIntersil Corporation
DatasheetDownload 5962F9854001VXC datasheet
Cross ref.Similar parts: 5962-8755001SA, 74AC11240, 74AC11244, 74AC11245, CD54AC240, CD54AC244, CD54AC374, CD54ACT245, CD54HC125, CD54HC126
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Features, Applications

Radiation Hardened Inverting, Octal, Three-State Buffer/Line Driver

The Radiation Hardened is an Inverting, Octal, Three-State Buffer/Line Driver with two active-LOW Enable inputs (AE and BE). Each Enable input controls four outputs. When an Enable input is LOW, the corresponding outputs are active and input signals are inverted. A HIGH on an Enable input causes the corresponding outputs to be high impedance, regardless of the input levels. The ACS240MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACS240 are contained in SMD 5962-98540. A "hot-link" is provided on our homepage with instructions for downloading.


QML Qualified Per MIL-PRF-38535 Requirements 1.25Micron Radiation Hardened SOS CMOS Radiation Environment - Latch-up Free Under any Conditions - Total Dose. x 105 RAD(Si) - SEU Immunity. x 10-10 Errors/Bit/Day - SEU LET Threshold. >100MeV/(mg/cm2) Input Logic Levels VIL = (0.3V)(VCC), VIH = (0.7V)(VCC) Output Current. 16mA Quiescent Supply Current.20A Propagation Delay. 11.5ns

Databus Driving Data Routing Redundant Data Control Circuitry

SMD PART NUMBER 5962F9854001VRC N/A 5962F9854001VXC N/A INTERSIL PART NUMBER ACS240K/Sample-02 ACS240HMSR-02 TEMP. RANGE (oC) 125 25 PACKAGE 20 Ld SBDIP 20 Ld SBDIP 20 Ld Flatpack 20 Ld Flatpack Die CASE OUTLINE CDIP2-T20 CDFP4-F20 N/A

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Copyright Intersil Corporation 1999

DIE DIMENSIONS: Size: 2540m (100 mils x 100mils) Thickness: 25m (20.6 mils 1 mil) Bond Pad: x 4.3 mils) METALLIZATION: Al Metal 1 Thickness: 0.7m 0.1m Metal 2 Thickness: 1.0m 0.1m SUBSTRATE POTENTIAL: Unbiased Insulator PASSIVATION Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30m 0.15m SPECIAL INSTRUCTIONS: Bond VCC First ADDITIONAL INFORMATION: Worst Case Density: 105 A/cm2 Transistor Count: 198

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site

NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: FAX:


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