|Category||Logic => Buffers/Inverters|
|Description||Radiation Hardened Hex Inverter With Open Drain Outputs|
|Datasheet||Download 5962F9860201V9A datasheet
Radiation Hardened Hex Inverter with Open Drain Outputs
The Radiation Hardened is a Hex Inverter with open drain outputs. This device inverts a HIGH level on each input to a LOW level on the corresponding Y output. A LOW level on the input causes the corresponding Y output to enter a high impedance state, which can be pulled HIGH through a resistor to VCC. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times. The ACS05MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACS05MS are contained in SMD 5962-98602. A "hot-link" is provided on our homepage with instructions for downloading. www.intersil.com/data/sm/index.aspFeatures
QML Qualified Per MIL-PRF-38535 Requirements 1.25 Micron Radiation Hardened SOS CMOS Radiation Environment - Latch-Up Free Under any Conditions - Total Dose. x 105 RAD (Si) - SEU Immunity. x 10-10 Errors/Bit/Day - SEU LET Threshold. >100MeV/(mg/cm2) Input Logic Levels. VIL = (0.3)(VCC), VIH = (0.7)(VCC) Output Current. ±8mA (Min) Quiescent Supply Current. 100µA (Max) Propagation Delay. 20ns (Max)Applications
High Speed Control Circuits Sensor Monitoring Low Power Designs
ORDERING NUMBER ACS05K/SAMPLE-03 5962F9860201V9A INTERNAL MKT. NUMBER ACS05K/SAMPLE-03 ACS05HMSR-03 TEMP. RANGE (oC) 125 25 PACKAGE 14 Ld SBDIP 14 Ld SBDIP 14 Ld Flatpack 14 Ld Flatpack Die DESIGNATOR CDIP2-T14 CDFP4-F14 N/A
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Copyright © Intersil Corporation 1999
DIE DIMENSIONS: Size: 2390µm (94 mils x 94 mils) Thickness: ±25µm (20.6 mils ±1 mil) Bond Pad: x 4.3 mils) METALLIZATION: Metal 1 Thickness: 0.7µm ±0.1µm Metal 2 Thickness: 1.0µm ±0.1µm SUBSTRATE POTENTIAL Unbiased Insulator PASSIVATION: Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30µm ±0.15µm SPECIAL INSTRUCTIONS: Bond VCC First ADDITIONAL INFORMATION: Worst Case Current Density: 105 A/cm2 Transistor Count: 46
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