|Category||Analog & Mixed-Signal Processing => Comparators|
|Description||Radiation Hardened Quad Voltage Comparator|
|Datasheet||Download 5962F9861301QCC datasheet
|Cross ref.||Similar parts: 5962-9673802VCA, LM139|
The Radiation Hardened HS-139RH consists of four independent single or dual supply voltage comparators on a single monolithic substrate. The common mode input voltage range includes ground, even when operated from a single supply, and the low supply current makes these comparators suitable for low power applications. These types were designed to directly interface with TTL and CMOS. The HS-139RH is fabricated on our dielectrically isolated Rad Hard Silicon Gate (RSG) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the HS-139RH are contained in SMD 5962-98613. A "hot-link" is provided on our homepage with instructions for downloading. www.intersil.com/spacedefense/newsafclasst.aspFeatures
QML Qualified Per MIL-PRF-38535 Requirements Radiation Environment - Latch-up Free Under any Conditions - Total Dose (Max). x 105 RAD(Si) - SEU LET Threshold. 20MeV/cm2/mg - Low Dose Rate Effects Immunity 100V Output Voltage Withstand Capability ESD Protection to >3000V Differential Input Voltage Range Equal to the Supply Voltage Input Offset Voltage (VIO). 2mV (Max) Quiescent Supply Current. 2mA (Max)Applications
Pulse Generators Timing Circuitry Level Shifting Analog to Digital Conversion
ORDERING NUMBER 5962F9861301QXC HS9-139RH/Proto INTERNAL MKT. NUMBER HS9-139RH-8 HS9-139RH/Proto TEMP. RANGE (oC) to 125
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Copyright © Intersil Corporation 1999
DIE DIMENSIONS: 2820µm (148 mils x 111 mils) 25.4µm (19 mils ± 1 mil) INTERFACE MATERIALS: Glassivation: Type: Silox (SiO2) Thickness: ± 1.0kĹ Top Metallization: Type: AlSiCu Thickness: ± 2kĹ Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: 105 A/cm2 Transistor Count: 49
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.For information regarding Intersil Corporation and its products, see web site www.intersil.com 2
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