Details, datasheet, quote on part number: 5962F9863301VXC
CategoryCommunication => Line Protection
DescriptionRadiation Hardened 10-to-4 Line Priority Encoder
CompanyIntersil Corporation
DatasheetDownload 5962F9863301VXC datasheet
Cross ref.Similar parts: CD40147B, CD4063B, CD4532B, CD4585B, CD74AC283, SN54F283, SN74F283, SN74F521
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Features, Applications

These nine-input priority encoders accept data from nine active LOW inputs and provide a binary representation on the four active LOW outputs. A priority is assigned to each input so that when two or more inputs are simultaneously active, the input with the highest priority is represented on the output. Input line I9 has the highest priority. These devices provide the 10-to-4-line priority encoding function by use of the implied decimal "zero". The "zero" is encoded when all nine data inputs are HIGH, forcing all four outputs HIGH. The ACS147MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACS147MS are contained in SMD 5962-98633. A "hot-link" is provided on our homepage for downloading.


QML Qualified Per MIL-PRF-38535 Requirements 1.25 Micron Radiation Hardened SOS CMOS Radiation Environment - Latch-Up Free Under Any Conditions - Total Dose (Max.). x 105 RAD(Si) - SEU Immunity. x 10-10 Errors/Bit/Day - SEU LET Threshold. >100MeV/(mg/cm2) Input Logic Levels. VIL = (0.3)(VCC), VIH = (0.7)(VCC) Output Current. 12mA (Min) Quiescent Supply Current. 20A (Max) Propagation Delay. 17ns (Max)

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Copyright Intersil Corporation 1999

DIE DIMENSIONS: Size: 2390m (94 mils x 94 mils) Thickness: 25m (20.6 mils 1 mil) Bond Pad: x 4.3 mils) METALLIZATION: AI Metal 1 Thickness: 0.7m 0.1m Metal 2 Thickness: 1.0m 0.1m SUBSTRATE POTENTIAL Unbiased Insulator PASSIVATION: Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30m 0.15m SPECIAL INSTRUCTIONS Bond VCC First ADDITIONAL INFORMATION: Worst Case Current Density: 105 A/cm2 Transistor Count: 233

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site

NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: FAX:


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