These nine-input priority encoders accept data from nine active LOW inputs and provide a binary representation on the four active LOW outputs. A priority is assigned to each input so that when two or more inputs are simultaneously active, the input with the highest priority is represented on the output. Input line I9 has the highest priority. These devices provide the 10-to-4-line priority encoding function by use of the implied decimal "zero". The "zero" is encoded when all nine data inputs are HIGH, forcing all four outputs HIGH. The ACS147MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACS147MS are contained in SMD 5962-98633. A "hot-link" is provided on our homepage for downloading. http://www.intersil.com/spacedefense/spaceselect.htm
· QML Qualified Per MIL-PRF-38535 Requirements· 1.25 Micron Radiation Hardened SOS CMOS· Radiation Environment - Latch-Up Free Under Any Conditions - Total Dose (Max.). x 105 RAD(Si) - SEU Immunity. x 10-10 Errors/Bit/Day - SEU LET Threshold. >100MeV/(mg/cm2)· Input Logic Levels. VIL = (0.3)(VCC), VIH = (0.7)(VCC)· Output Current. ±12mA (Min)· Quiescent Supply Current. 20µA (Max)· Propagation Delay. 17ns (Max)
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ORDERING NUMBER ACS147K/SAMPLE-03 5962F9863301V9A INTERNAL MARKETING NUMBER ACS147K/SAMPLE-03 ACS147HMSR-03 TEMP. RANGE (oC) 125 25 PACKAGE 16 Ld SBDIP 16 Ld SBDIP 16 Ld Flatpack 16 Ld Flatpack Die DESIGNATOR CDFP4-F16 NA
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Copyright © Intersil Corporation 1999
DIE DIMENSIONS: Size: 2390µm (94 mils x 94 mils) Thickness: ±25µm (20.6 mils ±1 mil) Bond Pad: x 4.3 mils) METALLIZATION: AI Metal 1 Thickness: 0.7µm ±0.1µm Metal 2 Thickness: 1.0µm ±0.1µm SUBSTRATE POTENTIAL Unbiased Insulator PASSIVATION: Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30µm ±0.15µm SPECIAL INSTRUCTIONS Bond VCC First ADDITIONAL INFORMATION: Worst Case Current Density: 105 A/cm2 Transistor Count: 233
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