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Part: 5962F9953601QXC
Category:
Analog & Mixed-Signal Processing
-> Voltage to Frequency/Frequency to Voltage
Description: Radiation Hardened High Frequency Half Bridge Driver
Company: Intersil Corporation
Datasheet: Download 5962F9953601QXC datasheet File size : 132 kB
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Datasheet text preview:
HS-2100RH
D a ta Sheet Ju n e 1999 F i l e Number 4562.3
Radiation Hardened High Frequency Half Bridge Driver
The Radiation Hardened HS-2100RH is a high frequency, 100V Half Bridge N-Channel MOSFET Driver IC, which is a functional, pin-to-pin replacement for the Intersil HIP2500 and the industry standard 2110 types. The low-side and high-side gate drivers are independently controlled. This gives the user maximum flexibility in dead-time selection and driver protocol. In addition, the device has on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from SEUs. Under voltage on the high-side supply forces HO low. When that supply returns to a valid voltage, HO will go to the state of HIN. Undervoltage on the low-side supply forces both LO and HO low. When that supply becomes valid, LO returns to the LIN state and HO returns to the HIN state. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for the HS-2100RH are contained in SMD 5962-99536. A "hot-link" is provided on our homepage for downloading. www.intersil.com/spacedefense/space.asp This link will not be available until the SMD is finalized.
Features
· Electrically Screened to DESC SMD # 5962-99536 · QML Qualified per MIL-PRF-38535 Requirements · Radiation Environment - Maximum Total Dose . . . . . . . . . . . . . . 3 x 105 RAD(SI) - DI RSG Process Provides Latch-up Immunity - Ver tical Architecture Provides Low Dose Rate Immunity · Bootstrap Supply Max Voltage to 120V · Drives 1000pF Load at 1MHz with Rise and Fall Times of 45ns (Typ) · 1A (Typ) Peak Output Current · Independent Inputs for Non-Half Bridge Topologies · Low DC Power Consumption . . . . . . . . . . . . . 60mW (Typ) · Operates with VDD = VCC Over 12V to 20V Range · Supply Undervoltage Protection
Applications
· High Frequency Switch-Mode Power Supplies · Drivers for Inductive Loads · DC Motor Drivers
Pinout
HS-2100RH FLATPACK (CDFP4-F16) TOP VIEW
LO 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 NC VSS LIN SD HIN VDD NC NC
Ordering Information
ORDERING NUMBER 5962F9953601VXC 5962F9953601QXC HS9-2100RH/Proto INTERSIL MKT. NUMBER HS9-2100RH-Q HS9-2100RH-8 HS9-2100RH/Proto TEMP. RANGE (oC) -55 to 125 -55 to 125 -55 to 125
COM VCC NC NC VS VB HO
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
HS-2100RH Die Characteristics
DIE DIMENSIONS: 4710µm x 3570µm (186 mils x 141 mils) Thickness: 483µm ±25.4µm (19 mils ±1 mil) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorous Silicon Glass) Thickness: 8.0kÅ ±1.0kÅ Top Metallization: Type: ALSiCu Thickness: 16.0kÅ ±2kÅ Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 x 105 A/cm2 Transistor Count: 125
Metallization Mask Layout
HS-2100RH
SD (13)
HIN (12)
LIN (14) VDD (11) VSS (15)
LO (1)
HO (8)
COM (2)
VB (7)
VCC (3)
VS (6)
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third par ties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Cor poration and its products, see web site www.intersil.com 2
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