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Part: CD40106BDMSR
Category:
Others
-> Space Applications
Description: Schmitt Trigger, Hex, Inverting
Company: Intersil Corporation
Datasheet: Download CD40106BDMSR datasheet File size : 288 kB
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Datasheet text preview:
CD40106BMS
December 1992
CMOS Hex Schmitt Triggers
Pinout
CD40106BMS TOP VIEW
A1 G=A 2 B3 H=B 4 14 VDD 13 F 12 L = F 11 E 10 K = E 9D 8 J=D
Features
· High Voltage Type (20V Rating) · Schmitt Trigger Action with No External Components · Hysteresis Voltage (Typ.) - 0.9V at VDD = 5V - 2.3V at VDD = 10V - 3.5V at VDD = 15V · Noise Immunity Greater than 50% · No Limit on Input Rise and Fall Times · Low VDD to VSS Current During Slow Input Ramp · 100% Tested for Quiescent Current at 20V · 5V, 10V and 15V Parametric Ratings · Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC · Standardized Symmetrical Output Characteristics · Meets All Requirements of JEDEC Tentative Standard No. 13B, "Standard Specifications for Description of `B' Series CMOS Devices"
C5 I=C 6 VSS 7
Functional Diagram
A 1 2 G=A
B
3
4
H=B
Applications
· Wave and Pulse Shapers · High Noise Environment Systems · Monostable Multivibrators
C
5
6
I=C
D
9
8
J=D
E
11
10
K=E
· Astable Multivibrators
Description
CD40106BMS consists of six Schmitt trigger circuits. Each circuit functions as an inverter with Schmitt trigger action on the input. The trigger switches at different points for positive and negative going signals. The difference between the positive going voltage (VP) and the negative going voltage (VN) is defined as hysteresis voltage (VH) (see Figure 17). The CD40106BMS is supplied in these 14 lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4Q H1B H3W *
F
13
12
L=F
Logic Diagram
A 1 (3, 5, 9, 11, 13)
*
*
G 2 (4, 6, 8, 10, 12) VDD
ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK
VSS
FIGURE 1. 1 OF 6 SCHMITT TRIGGERS
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
File Number
3354
7-1327
Specifications CD40106BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . . ja jc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 2) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Positive Trigger Threshold Voltage (See Figure 17) Negative Trigger Threshold Voltage (See Figure 17) Hysteresis Voltage (See Figure 17) VP5 VP10 VP15 VN5 VN10 VN15 VH5 VH10 VH15 VDD = 5V VDD = 10V VDD = 15V VDD = 5V VDD = 10V VDD = 15V VDD = 5V VDD = 10V VDD = 15V 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3
o o
LIMITS TEMPERATURE +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +25oC, +125oC, +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25 C, +125oC, -55oC +25 C, +125 C, -55 C +25oC, +125oC, -55oC +25 C, +125 C, -55 C +25oC, +125oC, -55oC +25 C, +125 C, -55 C +25 C, +125 C, -55 C +25oC, +125oC, -55oC +25 C, +125 C, -55 C
o o o o o o o o o o o o o o
PARAMETER Supply Current
SYMBOL IDD
CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND
MIN -100 -1000 -100 -
MAX 2 200 2 100 1000 100 50 -0.53 -1.8 -1.4 -3.5 -0.7 2.8
UNITS µA µA µA nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V
-55oC
-
+25oC, +125oC, -55oC 14.95 0.53 1.4 3.5 -2.8 0.7
VOH > VOL < VDD/2 VDD/2
2.2 4.6 6.8 0.9 2.5 4 0.3 1.2 1.6
3.6 7.1 10.8 2.8 5.2 7.4 1.6 3.4 5.0
V V V V V V V V V
NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max.
7-1328
Specifications CD40106BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC LIMITS MIN MAX 280 378 200 270 UNITS ns ns ns ns
PARAMETER Propagation Delay
SYMBOL TPHL TPLH TTHL TTLH
CONDITIONS (NOTE 1, 2) VDD = 5V, VIN = VDD or GND
Transition Time
+25oC +125oC, -55oC
NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns 2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC, +25oC +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC MIN 4.95 9.95 0.36 0.64 0.9 1.6 2.4 4.2 MAX 1 30 2 60 2 120 50 50 -0.36 -0.64 -1.15 -2.0 -0.9 -1.6 -2.4 -4.2 140 120 100 80 UNITS µA µA µA µA µA µA mV mV V V mA mA mA mA mA mA mA mA mA mA mA mA mA mA ns ns ns ns
+125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) VOL VOL VOH VOH IOL5 VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, VOUT = 0.4V 1, 2 1, 2 1, 2 1, 2 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC -55oC Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC -55o Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 C
+125oC -55 C
o
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
+125 C -55 C
o
o
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
+125oC -55 C
o
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
+125 C -55 C
o
o
Propagation Delay
TPHL TPLH TTHL TTLH
VDD = 10V VDD = 15V VDD = 10V VDD = 15V
1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3
+25oC +25 C +25 C +25 C
o o o
Transition Time
7-1329
Specifications CD40106BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K., Input TR, TF < 20ns SYMBOL CIN CONDITIONS Any Input NOTES 1, 2 TEMPERATURE +25oC MIN MAX 7.5 UNITS pF
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH VTN VTP VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10µA VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 7.5 -0.2 ±1 2.8 ±1 VOL < VDD/2 1.35 x +25oC Limit UNITS µA V V V V V
ns
NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25oC limit. 4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER Supply Current - MSI-1 Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A ± 0.2µA ± 20% x Pre-Test Reading ± 20% x Pre-Test Reading DELTA LIMIT
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 IDD, IOL5, IOH5A READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A
7-1330
Specifications CD40106BMS
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 READ AND RECORD Subgroups 1, 2, 3, 9, 10, 11
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4
CONFORMANCE GROUPS Group E Subgroup 2
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 Note 1 Static Burn-In 2 Note 1 Dynamic BurnIn Note 1 Irradiation Note 2 NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V OPEN 2, 4, 6, 8, 10, 12 2, 4, 6, 8, 10, 12 2, 4, 6, 8, 10, 12 GROUND 1, 3, 5, 7, 9, 11, 13 7 7 7 VDD 14 1, 3, 5, 9, 11, 13, 14 14 1, 3, 5, 9, 11, 13, 14 2, 4, 6, 8, 10, 12 1, 3, 5, 9, 11, 13 9V ± -0.5V 50kHz 25kHz
Typical Performance Characteristics
OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC
30 25 20 15 10 5
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 7.5 5.0 2.5 10V
10V
5V 0 5 10 15
5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS
FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS
7-1331
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