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Part: CD40107BMS
Category:
Logic
-> Line Driver/Receivers
-> CMOS/BiCMOS->4000 Family
Description: Radiation Hardened CMOS Dual 2 Input NAND Buffer/driver
Company: Intersil Corporation
Datasheet: Download CD40107BMS datasheet File size : 422 kB
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Datasheet text preview:
CD40107BMS
December 1992
CMOS Dual 2 Input NAND Buffer/Driver
Pinouts
CD40107BF TOP VIEW
Features
· High Voltage Type (20V Rating) · 32 Times Standard B Series Output Current Drive Sinking Capability - 136mA Typ. at VDD = 10V - VDS = 1V · 100% Tested for Quiescent Current at 20V · 5V, 10V and 15V Parametric Ratings · Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC · Noise Margin (Over Full Package/Temperature Range) RL to VDD = 10k - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V · Meets All Requirements of JEDEC Tentative Standard No. 13B, "Standard Specifications for Description of `B' Series CMOS Devices"
NC 1 NC 2 A3 B4 C=A· B 5 NC 6 VSS 7
14 VDD 13 NC 12 NC 11 D 10 E 9 F=D· E 8 NC
NC = NO CONNECTION
Functional Diagram
C=A· B A B VSS
Applications
· Driving Relays, Lamps, LEDs · Line Driver · Level Shifter (Up or Down)
Description
CD40107BMS is a dual 2 input NAND buffer/driver containing two independent 2 input NAND buffers with open drain single n-channel transistor outputs. This device features a wired OR capability and high output sink current capability (136mA typ. at VDD = 10V, VDS = 1V). The CD40107BMS is supplied in these 14 lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4H H1B H3W
D E
F=D· E
VSS
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
File Number
3355
7-18
Specifications CD40107BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . . ja jc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 VDD = 18V Output Drive Voltage Output Drive Voltage Output Drive Voltage Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional (Note 3) VOL5A VOL5B VDD = 5V, IOL = 16mA VDD = 5V, IOL = 34mA 3 1 2 3 1 2 3 1 1 1 1 1 LIMITS TEMPERATURE +25oC +125 C -55oC +25 C +125oC -55oC +25 C +125oC -55oC +25 C +25oC +25 C +25oC +25oC
o o o o o
PARAMETER Supply Current
SYMBOL IDD
CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND
MIN -100 -1000 -100 -
MAX 2 200 2 100 1000 100 0.4 1.0 0.5 1.0 0.5
UNITS µA µA µA nA nA nA nA nA nA V V V V V
VOL10A VDD = 10V, IOL = 37mA VOL10B VDD = 10V, IOL = 68mA VOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2, 3) Input Voltage High (Note 2, 3) Input Voltage Low (Note 2, 3) Input Voltage High (Note 2, 3) Tri-State Output Leakage High VIL VIH VIL VIH IOZ VDD = 5V, VOH > 4.5V, VOL 4.5V, VOL 13.5V, VOL 13.5V, VOL < 1.5V VIN = VDD or GND VOUT = VDD VDD = 20V VDD = 18V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. VDD = 15V, IOL = 50mA
No Internal Pull-Up Device
1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1 2 3
+25oC +25 C +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +125oC -55oC
o
-2.8 0.7
-0.7 2.8
V V V
VOH > VOL < VDD/2 VDD/2
3.5 11 -
1.5 4 2 20 2
V V V V µA µA µA
3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max.
7-19
Specifications CD40107BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC LIMITS MIN MAX 200 270 100 135 UNITS ns ns ns ns
PARAMETER Propagation Delay
SYMBOL TPHL TPLH TTHL TTLH
CONDITIONS (NOTE 1, 2) VDD = 5V, VIN = VDD or GND
Transition Time
+25oC +125oC, -55oC
NOTES: 1. CL = 50pF, RL = 120, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC, +25oC +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC MIN 4.95 9.95 12 21 25 44 28 49 51 89 38 66 +7 MAX 1 30 2 60 2 120 50 50 3 UNITS µA µA µA µA µA µA mV mV V V mA mA mA mA mA mA mA mA mA mA V V
+125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage (Note 5) Output Voltage (Note 5) Output Current (Sink) VOL VOL VOH VOH IOL5A VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 5.0V, VOUT = 0.4V 1, 2 1, 2 1, 2 1, 2 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC Output Current (Sink) IOL5B VDD = 5V, VOUT = 1.0V 1, 2, 4 +125oC -55oC Output Current (Sink) IOL10A VDD = 10V, VOUT = 0.5V 1, 2, 4 +125 C -55 C Output Current (Sink) IOL10B VDD = 10V, VOUT = 1V 1, 2, 4 +125oC -55oC Output Current (Sink) IOL15 VDD = 15V, VOUT = 0.5V 1, 2 +125 C -55 C Input Voltage Low Input Voltage High VIL VIH VDD = 10V, VOH > 9V, VOL 9V, VOL < 1V 1, 2, 4 1, 2, 4 +25oC, +125oC, -55oC +25oC, +125oC, -55oC
o o o o
7-20
Specifications CD40107BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Propagation Delay SYMBOL TPHL CONDITIONS VDD = 10V VDD = 15V Propagation Delay TPLH VDD = 10V VDD = 15V Transition Time TTHL VDD = 10V VDD = 15V Transition Time TTLH VDD = 10V VDD = 15V Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 120, pull up resistor to VDD, Input TR, TF < 20ns. 4. Measured with external pull-up resistor RL = 10K to VDD CIN Any Input NOTES 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC +25 C +25oC +25oC
o
MIN -
MAX 90 60 120 100 40 20 70 50 7.5
UNITS ns ns ns ns ns ns ns ns pF
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH VTN VTP VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10µA VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1, 5 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 7.5 -0.2 ±1 2.8 ±1 VOL < VDD/2 1.35 x +25oC Limit UNITS µA V V V V V
ns
NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 120, pull up resistor to VDD, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit. 4. Read and Record 5. Measured with external pull-up resistor RL = 10K to VDD
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER Supply Current - MSI-1 SYMBOL IDD ± 0.2µA DELTA LIMIT
7-21
Specifications CD40107BMS
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER Output Current (Sink) Output Current (Source) SYMBOL IOL5 IOH5A DELTA LIMIT ± 20% x Pre-Test Reading ± 20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 Subgroups 1, 2, 3, 9, 10, 11 IDD, IOL5, IOH5A READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4
CONFORMANCE GROUPS Group E Subgroup 2
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 (Note 1) Static Burn-In 2 (Note 1) Dynamic Burn-In (Note 3) Irradiation (Note 2) NOTE: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V 3. Each pin except VDD and GND will have a series resistor of 4.75K ±5%, VDD = 18V ±.5. OPEN 1, 2, 5, 6, 8, 9, 12, 13 1, 2, 5, 6, 8, 9, 12, 13 1, 2, 6, 8, 12, 13 1, 2, 5, 6, 8, 9, 12, 13 GROUND 3, 4, 7, 10, 11 7 7 7 VDD 14 3, 4, 10, 11, 14 14 3, 4, 10, 11, 14 5, 9 3, 4, 10, 11 9V ± -0.5V 50kHz 25kHz
7-22
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