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Part: CD40208BMS
Category:
Logic
-> Registers
-> CMOS/BiCMOS->4000 Family
Description: Radiation Hardened CMOS 4 X 4 Multiport Register
Company: Intersil Corporation
Datasheet: Download CD40208BMS datasheet File size : 395 kB
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CD40208BMS
December 1992
CMOS 4 x 4 Multiport Register
Description
The CD40208BMS is a 4 x 4 multiport register containing four 4-bit registers, write address decoder, two separate read address decoders, and two 3-state output buses. When the ENABLE input is low, the corresponding output bus is switched, independently of the clock, to a high impedance state. The high impedance third state provides the outputs with the capability of being connected to the bus lines in a bus organized system without the need for interface or pull-up components. When the WRITE ENABLE input is high, all data input lines are latched on the positive transition of the CLOCK and the data is entered into the word selected by the write address lines. When WRITE ENABLE is low, the CLOCK is inhibited and no new data is entered. In either case, the contents of any word may be accessed via the read address lines independent of the state of the CLOCK input. The CD40208BMS types are supplied in hermetic 24-lead dual-in-line ceramic packages (D and F suffixes), 24-lead dual-in-line plastic packages (E suffix), 24-lead ceramic flat packages (K suffix), and in chip form (H suffix). The CD40208BMS is supplied in these 24-lead outline packages: Braze Seal DIP Ceramic Flatpack HNZ H4P
Features
· · · · · · High Voltage Types (20V Rating) One Input and Two Output Buses Unlimited Expansion in Bit and Word Directions Data Lines have Latched Inputs 3-State Outputs Separate Control of Each Bus, Allowing Simultaneous Independent Reading of any of Four Registers on Bus A and Bus B and Independent Writing Into any of the Four Registers 100% Tested for Quiescent Current at 20V Standardized, Symmetrical Output Characteristics 5V, 10V and 15V Parametric Ratings Maximum Input Current of 1µA at 18V Over Full Package-Temperature Range; 100nA at 18V and +25oC Noise Margin (Full Package-Temperature Range): - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V Meets All Requirements of JEDEC Tentative Standards No. 13B, "Standard Specifications for Description of "B" Series CMOS Devices"
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Applications
· Scratch Pad Memories · Arithmetic Units · Data Storage
Pinout
CD40208BMS TOP VIEW
Q3B Q2B ENABLE A Q0A Q1A Q2A Q3A WRITE 0 WRITE 1 1 2 3 4 5 6 7 8 9 24 VDD 23 Q1B 22 Q0B 21 ENABLE B 20 D0 19 D1 18 D2 17 D3 16 CLOCK 15 WRITE ENABLE 14 READ 1A 13 READ 0A
Functional Diagram
WRITE ENABLE 15 D0 DATA INPUTS D1 D2 D3 WRITE 0 9 WRITE 1 READ 1A READ 0A READ 1B READ 0B VDD = 24 VSS = 12 14 13 11 10 16 CLOCK 21 ENABLE B 22 23 2 1 Q0 Q1 Q2 Q3 WORD B OUTPUT 20 19 18 17 8 ENABLE A 3 4 5 6 7 Q0 Q1 Q2 Q3 WORD A OUTPUT
READ 0B 10 READ 1B 11 VSS 12
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
File Number
3396
7-1431
Specifications CD40208BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum
Reliability Information
Thermal Resistance ja jc Ceramic DIP and Frit Package . . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 3) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2) Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2) Tri-State Output Leakage VIL VIH VIL VIH IOZL VDD = 5V, VOH > 4.5V, VOL 4.5V, VOL 13.5V, VOL 13.5V, VOL < 1.5V VIN = VDD or GND VOUT = 0V VDD = 20V VDD = 18V Tri-State Output Leakage IOZH VIN = VDD or GND VOUT = VDD VDD = 20V VDD = 18V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/NoGo test with limits applied to inputs. 3 1 2 3 1 2 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1 2 3 1 2 3 +25o LIMITS TEMPERATURE +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC C, +125oC, -55oC 3.5 11 -0.4 -12 -0.4 1.5 4 0.4 12 0.4 V V V V µA µA µA µA µA µA MIN -100 -1000 -100 0.53 1.4 3.5 -2.8 0.7 MAX 10 1000 10 100 1000 100 50 -0.53 -1.8 -1.4 -3.5 -0.7 2.8 UNITS µA µA µA nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V
PARAMETER Supply Current
SYMBOL IDD
CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND
+25oC, +125oC, -55oC 14.95
VOH > VOL < VDD/2 VDD/2
+25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +125oC -55oC +25oC +125oC -55oC
3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max.
7-1432
Specifications CD40208BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 9 10, 11 9 10, 11 9 10, 11 9 10, 11 9 10, 11 +25oC +125oC, -55oC LIMITS MIN 1.5 1.11 MAX 720 972 600 810 200 270 260 351 200 270 UNITS ns ns ns ns ns ns ns ns ns ns MHz MHz
PARAMETER Propagation Delay Clock or Write Enable to Q Propagation Delay Read or Write Enable to Q
SYMBOL TPHL1 TPLH1 TPHL2 TPLH2
CONDITIONS (NOTE 1) VDD = 5V, VIN = VDD or GND (Notes 1, 2) VDD = 5V, VIN = VDD or GND (Notes 1, 2)
+25oC +125oC, -55oC
Propagation Delay TPZH, HZ VDD = 5V, VIN = VDD or GND 3-State Disable Delay Time (Notes 2, 3) Propagation Delay TPZL, LZ VDD = 5V, VIN = VDD or GND 3-State Disable Delay Time (Notes 2, 3) Transition Time TTHL TTLH FCL VDD = 5V, VIN = VDD or GND (Notes 1, 2) VDD = 5V, VIN = VDD or GND
+25oC +125oC, -55oC
+25oC +125oC, -55oC
+25oC +125oC, -55oC
Maximum Clock Input Frequency NOTES:
+25oC +125oC, -55oC
1. VDD = 5V, CL = 50pF, RL = 200K 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC, +25oC MIN 4.95 9.95 0.36 0.64 0.9 1.6 2.4 4.2 MAX 5 150 10 300 10 600 50 50 -0.36 -0.64 UNITS µA µA µA µA µA µA mV mV V V mA mA mA mA mA mA mA mA mA mA
+125oC VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC
+125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC
+125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) VOL VOL VOH VOH IOL4 VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 4.5V, VOUT = 0.4V 1, 2 1, 2 1, 2 1, 2 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55 C Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125 C -55oC Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC -55 C Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125 C -55 C Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125 C -55 C
o o o o o o o
7-1433
Specifications CD40208BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Output Current (Source) SYMBOL IOH5B CONDITIONS VDD = 5V, VOUT = 2.5V NOTES 1, 2 TEMPERATURE +125oC -55oC Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC -55oC Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC -55 C Input Voltage Low Input Voltage High Propagation Delay Clock or Write Enable to Q Propagation Delay Read or Write Address to Q Propagation Delay Output Disable to Output VIL VIH TPHL1 TPLH1 TPHL2 TPLH2 VDD = 10V, VOH > 9V, VOL 9V, VOL < 1V VDD = 10V VDD = 15V VDD = 10V VDD = 15V 1, 2 1, 2 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 4 1, 2, 4 1, 2, 4 1, 2, 4 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25o
o o o o o o
MIN +7 -
MAX -1.15 -2.0 -0.9 -1.6 -2.4 -4.2 3 280 200 240 170 120 100 100 80 250 100 70 0 0 0 250 100 70 270 130 80 220 100 80 330 140 90 350 130 90 300 150 90
UNITS mA mA mA mA mA mA V V ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
TPZL, LZ VDD = 10V VDD = 15V
Propagation Delay TPZH, HZ VDD = 10V Output Disable to Output VDD = 15V Minimum Write Enable to Clock Setup Time TS (WE) VDD = 5V VDD = 10V VDD = 15V Minimum Data to Clock Setup Time TS (D) VDD = 5V VDD = 10V VDD = 15V Minimum Write Address to Clock Setup Time TS (WA) VDD = 5V VDD = 10V VDD = 15V Minimum Write Enable to Clock Hold Time TH (WE) VDD = 5V VDD = 10V VDD = 15V Minimum Data to Clock Hold Time TH (D) VDD = 5V VDD = 10V VDD = 15V Minimum Write Address to Clock Hold Time TH (WA) VDD = 5V VDD = 10V VDD = 15V Minimum Clock Pulse Width, Clock or Write Enable Minimum Clock Pulse Width, Write Address TW (CL) VDD = 5V VDD = 10V VDD = 15V TW (WA) VDD = 5V VDD = 10V VDD = 15V
C
+25 C +25 C +25 C +25 C +25 C +25oC +25oC +25 C +25 C +25 C +25 C +25 C
o o o o o
7-1434
Specifications CD40208BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Maximum Clock Input Frequency Clock Rise and Fall Time SYMBOL FCL CONDITIONS VDD = 10V VDD = 15V tRCL tFCL VDD = 5V VDD = 10V VDD = 15V Transition Time TTHL TTLH CIN VDD = 10V VDD = 15V Any Input NOTES 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25 C +25oC +25oC
o
MIN 3.5 4.5 -
MAX 15 5 5 100 80 7.5
UNITS MHz MHz µs µs µs ns ns pF
Input Capacitance NOTES:
1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K., Input TR, TF < 20ns 4. CL = 50pF, RL = 1K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH VNTH VPTH VPTH F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10µA VDD = 10V, ISS= -10µA VSS = 0V, IDD = 10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25 C +25oC +25 C +25oC +25oC +25oC
o o
MIN -2.8 0.2 VOH > VDD/2 -
MAX 25 -0.2 ±1 2.8 ±1 VOL < VDD/2 1.35 x +25oC Limit
UNITS µA V V V V V
ns
NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input tR, tF < 20ns. 3. See Table 2 for +25oC limit. 4. Read and Record. TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER Supply Current - MSI-2 Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A ± 1.0µA ± 20% x Pre-Test Reading ± 20% x Pre-Test Reading DELTA LIMIT
7-1435
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