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Part: CD4029BDMSR
Category:
Others
-> Space Applications
Description: Radiation Hardened CMOS Presettable Up/down Counter
Company: Intersil Corporation
Datasheet: Download CD4029BDMSR datasheet File size : 297 kB
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CD4029BMS
December 1992
CMOS Presettable Up/Down Counter
Description
CD4029BMS consists of a four-stage binary or BCD-decade up/ down counter with provisions for look-ahead carry in both counting modes. The inputs consist of a single CLOCK, CARRY-IN (CLOCK ENABLE), BINARY/DECADE, UP/DOWN, PRESET ENABLE, and four individual JAM signals. Q1, Q2, Q3, Q4 and a CARRY OUT signal are provided as outputs. A high PRESET ENABLE signal allows information on the JAM INPUTS to preset the counter to any state asynchronously with the clock. A low on each JAM line, when the PRESET-ENABLE signal is high, resets the counter to its zero count. The counter is advanced one count at the positive transition of the clock when the CARRY-IN and PRE-SET ENABLE signals are low. Advancement is inhibited when the CARRY-IN or PRESET ENABLE signals are high. The CARRY-OUT signal is normally high and goes low when the counter reaches its maximum count in the UP mode or the minimum count in the DOWN mode provided the CARRY-IN signal is low. The CARRY-IN signal in the low state can thus be considered a CLOCK ENABLE. The CARRY-IN terminal must be connected to VSS when not in use. Binary counting is accomplished when the BINARY/DECADE input is high; the counter counts in the decade mode when the BINARY/DECADE input is low. The counter counts up when the UP/DOWN input is high, and down when the UP/DOWN input is low. Multiple packages can be connected in either a parallelclocking or a ripple-clocking arrangement as shown in Figure 17. Parallel clocking provides synchronous control and hence faster response from all counting outputs. Ripple-clocking allows for longer clock input rise and fall times. The CD4029BMS is supplied in these 16-lead outline packages: Braze Seal DIP H4X Frit Seal DIP H1F Ceramic Flatpack H6W
Features
· High-Voltage Type (20V Rating) · Medium Speed Operation: 8MHz (Typ.) at CL = 50pF and VDD - VSS = 10V · Multi-Package Parallel Clocking for Synchronous High Speed Output Response or Ripple Clocking for Slow Clock Input Rise and Fall Times · "Preset Enable" and Individual "Jam" Inputs Provided · Binary or Decade Up/Down Counting · BCD Outputs in Decade Mode · 100% Tested for Maximum Quiescent Current at 20V · 5V, 10V and 15V Parametric Ratings · Standardized Symmetrical Output Characteristics · Maximum Input Current of 1µA at 18V Over Full Package-Temperature Range; 100nA at 18V and +25oC · Noise Margin (Over Full Package Temperature Range): - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V · Meets All Requirements of JEDEC Tentative Standards No. 13B, "Standard Specifications for Description of "B" Series CMOS Device's
Applications
· Programmable Binary and Decade Counting/Frequency Synthesizers-BCD Output · Analog to Digital and Digital to Analog Conversion · Up/Down Binary Counting · Difference Counting · Magnitude and Sign Generation · Up/Down Decade Counting
Pinout
CD4029BMS TOP VIEW
PRESET ENABLE 1 Q4 2 JAM 4 3 JAM 1 4 CARRY IN 5 Q1 6 CARRY OUT 7 VSS 8 16 VDD 15 CLOCK 14 Q3 13 JAM 3 12 JAM 2 11 Q2 10 UP/DOWN 9 BINARY/DECADE
Functional Diagram
PRESET ENABLE CARRY IN 1 (CLOCK ENABLE) 5 BINARY/ DECADE JAM INPUTS 1 2 3 4 VDD 16 6 Q1 11 Q2 Q3 BUFFERED OUTPUTS
4 12 13 3
9
14 UP/DOWN 10 2 CLOCK 15 7
Q4
8 VSS CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
CARRY OUT
File Number
3304
7-798
Specifications CD4029BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . . ja jc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W o Maximum Package Power Dissipation (PD) at +125 C For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 3) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2) Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2) VIL VIH VIL VIH VDD = 5V, VOH > 4.5V, VOL 4.5V, VOL 13.5V, VOL 13.5V, VOL < 1.5V 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 LIMITS TEMPERATURE +25
oC
PARAMETER Supply Current
SYMBOL IDD
CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND
MIN -100 -1000 -100 -
MAX 10 1000 10 100 1000 100 50 -0.53 -1.8 -1.4 -3.5 -0.7 2.8
UNITS µA µA µA nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V
+125oC -55oC +25o C
+125oC -55oC +25oC +125oC -55oC +25oC, +125oC, -55oC
+25oC, +125oC, -55oC 14.95 +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25 C +25 C +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC 3.5 11
o o
0.53 1.4 3.5 -2.8 0.7
VOH > VOL < VDD/2 VDD/2
1.5 4 -
V V V V
NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max.
7-799
Specifications CD4029BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC LIMITS MIN 2 1.48 MAX 500 675 560 756 470 635 640 864 340 459 200 270 UNITS ns ns ns ns ns ns ns ns ns ns ns ns MHz MHz
PARAMETER Propagation Delay Clock To Q Output Propagation Delay Clock To Carry Out Propagation Delay Preset Enable To Q Propagation Delay Preset Enable To CarryOut Propagation Delay Carry-In To Carry-Out Transition Time Q Output Maximum Clock Input Frequency NOTES:
SYMBOL TPHL1 TPLH1 TPHL2 TPLH2 TPHL3 TPLH3 TPHL4 TPLH4 TPHL5 TPLH5 TTHL TTLH FCL
CONDITIONS (NOTE 1, 2) VDD = 5V, VIN = VDD or GND
+25oC +125oC, -55oC
+25oC +125oC, -55oC
+25oC +125oC, -55oC
+25oC +125oC, -55oC +25oC +125oC, -55oC
+25oC +125oC, -55oC
1. VDD = 5V, CL = 50pF, RL = 200K 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC, +25oC +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) VOL VOL VOH VOH IOL5 VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, VOUT = 0.4V 1, 2 1, 2 1, 2 1, 2 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55 C Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC -55oC Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC -55 C Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC -55oC
o o
MIN 4.95 9.95 0.36 0.64 0.9 1.6 2.4 4.2 -
MAX 5 150 10 300 10 600 50 50 -0.36 -0.64
UNITS µA µA µA µA µA µA mV mV V V mA mA mA mA mA mA mA mA
7-800
Specifications CD4029BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Output Current (Source) SYMBOL IOH5B CONDITIONS VDD = 5V, VOUT = 2.5V NOTES 1, 2 TEMPERATURE +125oC -55 C Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC -55 Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2
oC o
MIN 7 4 5.5 -
MAX -1.15 -2.0 -0.9 -2.6 -2.4 -4.2 3 240 180 260 190 200 160 290 210 140 100 100 80 340 140 100 15 15 15 180 90 60 200 70 60 50 30 25 200 110 80
UNITS mA mA mA mA mA mA V V ns ns ns ns ns ns ns ns ns ns ns ns MHz MHz ns ns ns µs µs µs ns ns ns ns ns ns ns ns ns ns ns ns
+125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25oC +25oC +25oC +25 C +25oC +25oC +25
oC o
Input Voltage Low Input Voltage High Propagation Delay Q Output Propagation Delay Carry Output Propagation Delay Preset Enable To Q Propagation Delay Preset Enable To CarryOut Propagation Delay Carry In To Carry Out Transition Time
VIL VIH TPHL1 TPLH1 TPHL2 TPLH2 TPHL3 TPLH3 TPHL4 TPLH4 TPHL5 TPLH5 TTHL TTLH FCL
VDD = 10V, VOH > 9V, VOL 9V, VOL < 1V VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V
1, 2 1, 2 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3
+25oC +25oC +25 C +25
oC o
Maximum Clock Input Frequency Minimum Data Setup Time Note 4 Clock Rise And Fall Time Note 5
+25oC +25oC +25oC +25oC +25
oC
TS
VDD = 5V VDD = 10V VDD = 15V
TRCL TFCL
VDD = 5V VDD = 10V VDD = 15V
+25oC +25oC +25 C +25oC +25oC +25 C +25oC +25oC +25oC +25oC +25 C +25 C +25oC +25oC +25oC
o o o o
Minimum Clock Pulse Width
TW
VDD = 5V VDD = 10V VDD = 15V
Minimum Carry In Setup Time Note 6 Minimum Carry Input Hold Time Note 6 Minimum Preset Enable Removal Time Note 4
TS
VDD = 5V VDD = 10V VDD = 15V
TH
VDD = 5V VDD = 10V VDD = 15V
TREM
VDD = 5V VDD = 10V VDD = 15V
7-801
Specifications CD4029BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Minimum Preset Enable Pulse Width SYMBOL TW CONDITIONS VDD = 5V VDD = 10V VDD = 15V Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF 1µF) between VDD and VSS. 6. From Carry In to Clock Edge. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH VTN VTP VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10µA VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 25 -0.2 ±1 2.8 ±1 VOL < VDD/2 1.35 x +25oC Limit UNITS µA V V V V V CIN Any Input NOTES 1, 2, 3 1, 2, 3 1, 2, 3 1, 2 TEMPERATURE +25oC +25 C +25oC +25
oC o
MIN -
MAX 130 70 50 7.5
UNITS ns ns ns pF
ns
NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns 3. See Table 2 for +25oC limit. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current - MSI-2 Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A ± 1.0µA ± 20% x Pre-Test Reading ± 20% x Pre-Test Reading DELTA LIMIT
7-802
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