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Part: EL5210CS
Category:
Description: op Amp, Dual 30MHz, Rail-to-rail I/O, Supply = 4.5v to 16.5v, 2.5mA Per Amp, SR = 33V/us
Company: Intersil Corporation
Datasheet: Download EL5210CS datasheet File size : 498 kB
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®
EL5210, EL5410
D a ta Sheet N ov em be r 16, 2000 FN7185
30MHz Rail-to-Rail Input-Output Op Amps
The EL5210 and EL5410 are low power, high voltage rail-to-rail inputoutput amplifiers. The EL5210 contains two amplifiers in one package and the EL5410 contains four amplifiers. Operating on supplies ranging from 5V to 15V, while consuming only 2.5mA per amplifier, the EL5410 and EL5210 have a bandwidth of 30MHz (-3dB). They also provide common mode input ability beyond the supply rails, as well as rail-to-rail output capability. This enables these amplifiers to offer maximum dynamic range at any supply voltage. The EL5410 and EL5210 also feature fast slewing and settling times, as well as a high output drive capability of 30mA (sink and source). These features make these amplifiers ideal for high speed filtering and signal conditioning application. Other applications include battery power, portable devices, and anywhere low power consumption is important. The EL5410 is available in a space-saving 14-Pin TSSOP package, as well as the industry-standard 14-Pin SOIC. The EL5210 is available in the 8-Pin MSOP and 8-Pin SOIC packages. Both feature a standard operational amplifier pin out. These amplifiers operate over a temperature range of -40°C to +85°C.
Features
· 30MHz -3dB bandwidth · Supply voltage = 4.5V to 16.5V · Low supply current (per amplifier) = 2.5mA · High slew rate = 33V/µs · Unity-gain stable · Beyond the rails input capability · Rail-to-rail output swing · Available in both standard and space-saving fine pitch packages
Applications
· Driver for A-to-D Converters · Data Acquisition · Video Processing · Audio Processing · Active Filters · Test Equipment · Battery Powered Applications · Por table Equipment
Pinouts Ordering Information
EL5410 (14-PIN TSSOP, SOIC) TOP VIEW
VOUTA 1 VINA- 2 VINA+ 3 VS+ 4 VINB+ 5 + VINB- 6 VOUTB 7 + 9 VINC8 VOUTC + + 12 VIND+ VINA- 2 11 VSVINA+ 3 10 VINC+ VS- 4 + + 5 VINB+ 6 VINB7 VOUTB 14 VOUTD 13 VINDVOUTA 1 8 VS+
EL5210 (8-PIN MSOP, SOIC) TOP VIEW
PART NUMBER EL521 0CS E L 5 2 1 0 C S - T 13 EL521 0CY EL521 0CY-T 7 EL521 0CY-T 13 EL541 0CS E L 5 4 1 0 C S - T 13 EL541 0CR EL541 0CR-T 13
P ACKA GE 8-Pin SOIC 8-Pin SOIC 8-Pin MSOP 8-Pin MSOP 8-Pin MSOP 14-Pin SOIC 14-Pin SOIC 14-Pin TSSOP 14-Pin TSSOP
TAPE & REEL 13" 7" 13" 13" 13"
PKG. NO. MD P 0027 MD P0027 M D P 0043 MD P0043 MD P0043 M D P 0027 MD P0027 MD P0044 MD P0044
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2003. All Rights Reserved. Elantec is a registered trademark of Elantec Semiconductor, Inc. All other trademarks mentioned are the property of their respective owners.
EL5210, EL5410
Absolute Maximum Ratings (TA = 25°C)
Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+18V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VS- -0.5V, VS +0.5V Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 30mA Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Operating Temperature . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
PARAMETER INPUT CHARACTERISTICS VO S TCVOS IB RIN CIN CMIR CMRR AVOL
VS+ = +5V, VS- = -5V, RL = 1k and CL = 12pF to 0V, TA = 25°C unless otherwise specified. CONDITION MIN TYP MA X UNIT
DESCRIPTION
Input Offset Voltage Average Offset Voltage Drift (Note 1) Input Bias Current Input Impedance Input Capacitance Common-Mode Input Range Common-Mode Rejection Ratio Open-Loop Gain
VCM = 0V
3 7
15
mV µ V/° C
VCM = 0V
2 1 2 -5. 5
60
nA G pF
+5.5 70 80
V dB dB
for VIN from -5.5V to 5.5V -4.5V VOUT 4.5V
50 65
OUTPUT CHARACTERISTICS VO L VO H ISC IOUT Output Swing Low Output Swing High Short Circuit Current Output Current IL = -5mA IL = 5mA 4. 8 - 4.9 4.9 ±120 ±30 -4.8 V V mA mA
POWER SUPPLY PERFORMANCE PSRR IS Power Supply Rejection Ratio Supply Current (Per Amplifier) VS is moved from ±2.25V to ±7.75V No Load 60 80 2.5 3.75 dB mA
DYNAMIC PERFORMANCE SR tS BW GBWP PM CS dG dP NOTES: 1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges 3. NTSC signal generator used Slew Rate (Note 2) Settling to +0.1% (AV = +1) -3dB Bandwidth Gain-Bandwidth Product Phase Margin Channel Separation Differential Gain (Note 3) Differential Phase (Note 3) f = 5MHz RF = RG = 1k and VOUT = 1.4V RF = RG = 1k and VOUT = 1.4V -4.0V VOUT 4.0V, 20% to 80% (AV = +1), VO = 2V Step 33 140 30 20 50 110 0 .1 2 0 .1 7 V/µs ns MHz MHz ° dB % °
2
EL5210, EL5410
Electrical Specifications
PARAMETER INPUT CHARACTERISTICS VOS TCVOS IB RIN CIN CMIR CMR R AVOL Input Offset Voltage Average Offset Voltage Drift (Note 1) Input Bias Current Input Impedance Input Capacitance Common-Mode Input Range Common-Mode Rejection Ratio Open-Loop Gain for VIN from -0.5V to 5.5V 0.5V VOUT 4.5V -0. 5 45 65 66 80 VCM = 2.5V VCM = 2.5V 3 7 2 1 2 +5.5 60 15 mV µV/° C nA G pF V dB dB VS+ = 5V, VS- = 0V, RL = 1k and CL = 12pF to 2.5V, TA = 25°C unless otherwise specified. CONDITION M IN TYP MAX UNIT
DESCRIPTION
OUTPUT CHARACTERISTICS VOL VOH ISC IOUT Output Swing Low Output Swing High Short Circuit Current Output Current IL = -5mA IL = 5mA 4. 8 100 4.9 ±120 ±30 2 00 mV V mA mA
POWER SUPPLY PERFORMANCE PSRR IS Power Supply Rejection Ratio Supply Current (Per Amplifier) VS is moved from 4.5V to 15.5V No Load 60 80 2.5 3. 7 5 dB mA
DYNAMIC PERFORMANCE SR tS BW GBWP PM CS dG dP NOTES: 1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges 3. NTSC signal generator used Slew Rate (Note 2) Settling to +0.1% (AV = +1) -3dB Bandwidth Gain-Bandwidth Product Phase Margin Channel Separation Differential Gain (Note 3) Differential Phase (Note 3) f = 5MHz RF = RG = 1k and VOUT = 1.4V RF = RG = 1k and VOUT = 1.4V 1V VOUT 4V, 20% o 80% (AV = +1), VO = 2V Step 33 140 30 20 50 110 0.30 0.66 V /µs ns MHz MHz ° dB % °
3
EL5210, EL5410
Electrical Specifications
PARAMETER VS+ = 15V, VS- = 0V, RL = 1k and CL = 12pF to 7.5V, TA = 25°C unless otherwise specified. C O N D IT I O N MIN TYP MAX UNIT
DESCRIPTION
INPUT CHARACTERISTICS VOS TCVOS IB R IN C IN CMI R CMR R AVOL Input Offset Voltage Average Offset Voltage Drift (Note 1) Input Bias Current Input Impedance Input Capacitance Common-Mode Input Range Common-Mode Rejection Ratio Open-Loop Gain for VIN from -0.5V to 15.5V 0.5V VOUT 14.5V -0.5 53 65 72 80 VCM = 7.5V VCM = 7.5V 3 7 2 1 2 +15. 5 60 15 mV µV/°C nA G pF V dB dB
OUTPUT CHARACTERISTICS VOL VOH ISC IOUT Output Swing Low Output Swing High Short Circuit Current Output Current IL = -7.5mA IL = 7.5mA 14.65 170 14.83 ±120 ±30 350 mV V mA mA
POWER SUPPLY PERFORMANCE PSRR IS Power Supply Rejection Ratio Supply Current (Per Amplifier) VS is moved from 4.5V to 15.5V No Load 60 80 2.5 3.7 5 dB mA
DYNAMIC PERFORMANCE SR tS BW GBWP PM CS dG dP NOTES: 1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges 3. NTSC signal generator used Slew Rate (Note 2) Settling to +0.1% (AV = +1) -3dB Bandwidth Gain-Bandwidth Product Phase Margin Channel Separation Differential Gain (Note 3) Differential Phase (Note 3) f = 5MHz RF = RG = 1k and VOUT = 1.4V RF = RG = 1k and VOUT = 1.4V 1V VOUT 14V, 20% o 80% (AV = +1), VO = 2V Step 33 140 30 20 50 110 0.10 0.11 V/µs ns MHz MHz ° dB % °
4
EL5210, EL5410 Typical Performance Curves
EL5410 Input Offset Voltage Distribution 500 VS=±5V TA=25°C Typical Production Distortion Quantity (Amplifiers) 25 VS=±5V 20 Typical Production Distortion EL5410 Input Offset Voltage Drift
400 Quantity (Amplifiers)
300
15
200
10
100
5
0 -12 -10 2 4 6 8 10 12 -8 -6 -4 -2 -0 Input Offset Voltage (mV)
0 1 3 5 7 9 11 13 15 17 19 Input Offset Voltage Drift, TCVOS (µV/°C) 21 150 150
Input Offset Voltage vs Temperature 5 0.008
Input Bias Current vs Temperature
Input Offset Voltage (mV)
4 Input Bias Current (µA)
0.004
VS=±5V
3
0
2
-0.004
1
-0.008
0 -50
-10
30
70
110
150
-0.012 -50
-10
30
70
110
Temperature (°C)
Temperature (°C)
Output High Voltage vs Temperature 4.96 -4.85
Output Low Voltage vs Temperature
4.95 Output High Voltage (V) Output Low Voltage (V) VS=±5V IOUT=5mA 4.94
-4.87 VS=±5V IOUT=5mA -4.89
4.93
-4.91
4.92
-4.93
4.91 -50
-10
30
70
110
150
-4.95 -50
-10
30
70
110
Temperature (°C)
Temperature (°C)
5
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