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Part: EL5421CY
Category:
Description: Buffer, Quad 12MHz, Rail-to-rail Input-Output, 4.5 to 16.5V, SR=10v/uS
Company: Intersil Corporation
Datasheet: Download EL5421CY datasheet File size : 227 kB
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Datasheet text preview:
®
EL5421
D a ta Sheet Oc to b e r 2, 2000 FN7198
Quad 12MHz Rail-to-Rail Input-Output Buffer
The EL5421 is a quad, low power, high voltage rail-to-rail input-output buffer. Operating on supplies ranging from 5V to 15V, while consuming only 500µA per channel, the EL5421 has a bandwidth of 12MHz (-3dB). The EL5421 also provides rail-to-rail input and output ability, giving the maximum dynamic range at any supply voltage. The EL5421 also features fast slewing and settling times, as well as a high output drive capability of 30mA (sink and source). These features make the EL5421 ideal for use as voltage reference buffers in Thin Film Transistor Liquid Crystal Displays (TFT-LCD). Other applications include battery power, portable devices and anywhere low power consumption is important. The EL5421 is available in a space saving 10-Pin MSOP package and operates over a temperature range of -40°C to +85°C.
Features
· 12MHz -3dB Bandwidth · Unity gain buffer · Supply voltage = 4.5V to 16.5V · Low supply current (per buffer) = 500µA · High slew rate = 10V/µs · Rail to Rail operation · "Mini" SO Package (MSOP)
Applications
· TFT-LCD Drive Circuits · Electronics Notebooks · Electronics Games · Personal Communication Devices · Personal Digital Assistants (PDA) · Por table Instrumentation
Pinout
EL 5421 (10-PIN MSOP) TOP VIEW
VOUTA 1 10 VOUTD
· Wireless LANs · Office Automation · Active Filters · ADC/DAC Buffer
VINA
2
9
VIND
VS+ VINB
3
8
VSVINC
Ordering Information
PART NUMBER EL542 1CY TEMP. RANGE -40°C to +85°C P ACKA GE 10-Pin MSOP PKG. NO. MD P0043
4
7
VOUTB
5
6
VOUTC
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2003. All Rights Reserved. Elantec is a registered trademark of Elantec Semiconductor, Inc. All other trademarks mentioned are the property of their respective owners.
EL5421
Absolute Maximum Ratings (TA = 25°C)
Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+18V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VS- -0.5V, VS+ +0.5V Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 30mA Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Operating Temperature . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
PA RAMETER INPUT CHARACTERISTICS VOS TCVOS IB RIN CIN AV
VS+ = +5V, VS- = -5V, RL = 10k and CL = 10pF to 0V, TA = 25°C unless otherwise specified. CONDITION MIN T YP MAX UNIT
D E S C R IP T I O N
Input Offset Voltage Average Offset Voltage Drift Input Bias Current Input Impedance Input Capacitance Voltage Gain
VCM = 0V (Note 1) VCM = 0V
2 5 2 1 1 .3 5
12
mV µ V/°C
50
nA G pF
-4.5V VOUT 4.5V
0.995
1.005
V/V
OUTPUT CHARACTERISTICS VOL VOH ISC Output Swing Low Output Swing High Short Circuit Current IL = -5mA IL = 5mA Short to GND (Note 2) 4. 8 5 ±80 -4.92 4 .92 ± 120 -4.85 V V mA
POWER SUPPLY PERFORMANCE PSRR IS Power Supply Rejection Ratio Supply Current (Per Buffer) VS is moved from ±2.25V to ±7.75V No Load 60 80 500 750 dB µA
DYNAMIC PERFORMANCE SR tS BW CS NOTES: 1. Measured over the operating temperature range 2. Parameter is guaranteed (but not test) by design and characterization data 3. Slew rate is measured on rising and falling edges Slew Rate (Note 3) Settling to +0.1% -3dB Bandwidth Channel Separation -4.0V VOUT 4.0V, 20% to 80% VO = 2V Step RL = 10k, CL = 10pF f = 5MHz 7 10 500 12 75 V /µs ns MH z dB
2
EL5421
Electrical Specifications
PARAMETER INPUT CHARACTERISTICS VOS TCVOS IB RIN CIN AV Input Offset Voltage Average Offset Voltage Drift Input Bias Current Input Impedance Input Capacitance Voltage Gain 0.5 VOUT 4.5V 0.995 VCM = 2.5V (Note 1) VCM = 2.5V 2 5 2 1 1.35 1.005 50 10 mV µ V/°C nA G pF V/V VS+ = +5V, VS- = 0V, RL = 10k and CL = 10pF to 2.5V, TA = 25°C unless otherwise specified. CONDITION MIN TYP MA X UNIT
DESCRIPTION
OUTPUT CHARACTERISTICS VOL VOH ISC Output Swing Low Output Swing High Short Circuit Current IL = -5mA IL = 5mA Short to GND (Note 2) 4. 8 5 ±80 80 4. 9 2 ± 120 150 mV V mA
POWER SUPPLY PERFORMANCE PSRR IS Power Supply Rejection Ratio Supply Current (Per Buffer) VS is moved from 4.5V to 15.5V No Load 60 80 500 750 dB µA
DYNAMIC PERFORMANCE SR tS BW CS NOTES: 1. Measured over the operating temperature range 2. Parameter is guaranteed (but not test) by design and characterization data 3. Slew rate is measured on rising and falling edges Slew Rate (Note 3) Settling to +0.1% -3dB Bandwidth Channel Separation 1V VOUT 4V, 20% to 80% VO = 2V Step RL = 10k, CL = 10pF f = 5MHz 7 10 50 0 12 75 V/µs ns MHz dB
3
EL5421
Electrical Specifications
PARAMETER INPUT CHARACTERISTICS VOS TCVOS IB RIN CIN AV Input Offset Voltage Average Offset Voltage Drift Input Bias Current Input Impedance Input Capacitance Voltage Gain 0.5 VOUT 14.5V 0.995 VCM = 7.5V (Note 1) VCM= 7.5V 2 5 2 1 1.35 1.005 50 14 mV µ V/°C nA G pF V/V VS+ = +15V, VS- = 0V, RL = 10k and CL = 10pF to 7.5V, TA = 25°C unless otherwise specified. C O N D I T IO N MIN TYP MA X UNIT
DESCRIPTION
OUTPUT CHARACTERISTICS VOL VOH ISC Output Swing Low Output Swing High Short Circuit Current IL = -5mA IL = 5mA Short to GND (Note 2) 14.85 ±80 80 14.92 ± 120 150 mV V mA
POWER SUPPLY PERFORMANCE PSRR IS Power Supply Rejection Ratio Supply Current (Per Buffer) VS is moved from 4.5V to 15.5V No Load 60 80 500 750 dB µA
DYNAMIC PERFORMANCE SR tS BW CS NOTES: 1. Measured over the operating temperature range 2. Parameter is guaranteed (but not test) by design and characterization data 3. Slew rate is measured on rising and falling edges Slew Rate (Note 3) Settling to +0.1% -3dB Bandwidth Channel Separation 1V VOUT 14V, 20% to 80% VO = 2V Step RL = 10k, CL = 10pF f = 5MHz 7 10 50 0 12 75 V /µs ns MH z dB
4
EL5421 Typical Performance Curves
Input Offset Voltage Distribution 1800 1600 1400 Quantity (Buffers) 1200 1000 800 600 400 200 0 -12 -10 2 4 6 8 10 12 -8 -6 -4 -2 -0 10 0 1 3 5 7 9 11 13 15 17 19 21 150 150 VS=±5V TA=25°C Typical Production Distribution Quantity (Buffers) 70 VS=±5V 60 50 40 30 20 Typical Production Distribution Input Offset Voltage Drift
Input Offset Voltage (mV)
Input Offset Voltage Drift, TCVOS (µV/°C)
Input Offset Voltage vs Temperature
Input Bias Current vs Temperature
10 VS=±5V Input Offset Voltage (mV) Input Bias Current (nA) 2.0 VS=±5V 5
0.0
0
-5
-2.0
-50
0
50 Temperature (°C)
100
150
-50
0
50 Temperature (°C)
100
Output High Voltage vs Temperature 4.97 -4.91
Output Low Voltage vs Temperature
Output High Voltage (V)
IOUT=5mA
Output Low Voltage (V)
4.96
VS=±5V
-4.92 VS=±5V -4.93 IOUT=-5mA
4.95
-4.94
-4.95
4.94
-4.96
4.93 -50 0 50 Temperature (°C) 100 150
-4.97 -50 0 50 Temperature (°C) 100
5
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