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Details, datasheet, quote on part number:FRE9160H
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| Part: | FRE9160H |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel |
| Description: | 30a, -100v, 0.095 Ohm, Rad Hard, P-channel Power MOSFETs |
| Company: | Intersil Corporation |
| Datasheet: | Download FRE9160H datasheet File size : 50 kB |
| Request For quote: | Find where to buy FRE9160H
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Datasheet text preview:
FRE9160D, FRE9160R, FRE9160H
June 1998
30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs
Package
TO-258AA
Features
· 30A, -100V, RDS(on) = 0.095 · Second Generation Rad Hard MOSFET Results From New Design Concepts · Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 10.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 3E13 Neutrons/cm2 Usable to 3E14 Neutrons/cm2
· Gamma Dot · Photo Current · Neutron
Description
The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet.
Symbol
Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specified
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain-Gate Voltage (RGS = 20k). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
FRE9160D, R, H -100 -100 30 19 90 ±20 150 60 1.20 90 30 90 -55 to +150 300
UNITS V V A A A V W W W/oC A A A oC
oC
File Number
3268.2
1
FRE9160D, FRE9160R, FRE9160H
Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS PARAMETER Drain-Source Breakdown Volts Gate-Threshold Volts Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero-Gate Voltage Drain Current Rated Avalanche Current Drain-Source On-State Volts Drain-Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate-Charge Threshold Gate-Charge On State Gate-Charge Total Plateau Voltage Gate-Charge Source Gate-Charge Drain Diode Forward Voltage Reverse Recovery Time Junction-To-Case Junction-To-Ambient SYMBOL BVDSS VGS(th) IGSSF IGSSR IDSS1 IDSS2 IDSS3 IAR VDS(on) RDS(on) td(on) tr td(off) tf QG(th) QG(on) QGM VGP QGS QGD VSD TT Rjc Rja Free Air Operation ID = 30A, VGD = 0 I = 30A; di/dt = 100A/µs VDD = -50V, ID = 30A IGS1 = IGS2 0 VGS 20 TEST CONDITIONS VGS = 0, ID = 1mA VDS = VGS, ID = 1mA VGS = -20V VGS = +20V VDS = -100V, VGS = 0 VDS = -80V, VGS = 0 VDS = -80V, VGS = 0, TC = +125oC Time = 20µs VGS = -10V, ID = 30A VGS = -10V, ID = 19A VDD = -50V, ID = 30A Pulse Width = 3µs Period = 300µs, Rg = 10 0 VGS 10 (See Test Circuit) MIN -100 -2.0 4 85 180 -3 21 35 -0.6 MAX -4.0 100 100 1 0.025 0.25 90 -2.99 0.095 90 440 ns 250 170 18 350 750 -14 85 nc 140 -1.8 400 0.83 48 V ns
oC/W
UNITS V V nA nA mA A V
nc
V
ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDD VDS L RL VDS 0V DUT + CURRENT I TRANSFORMER AS
-
VARY tP TO OBTAIN REQUIRED PEAK IAS 0V tP
50
+
DUT 50
VDD
VGS = -12V
RGS VGS 20V
50V -150V
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
2
FRE9160D, FRE9160R, FRE9160H
Post-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS PARAMETER Drain-Source Breakdown Volts (Note 4, 6) (Note 5, 6) Gate-Source Threshold Volts (Note 4, 6) (Note 3, 5, 6) Gate-Body Leakage Forward (Note 4, 6) (Note 5, 6) Gate-Body Leakage Reverse (Note 2, 4, 6) (Note 2, 5, 6) Zero-Gate Voltage Drain Current (Note 4, 6) (Note 5, 6) Drain-Source On-State Volts (Note 1, 4, 6) (Note 1, 5, 6) Drain-Source On Resistance (Note 1, 4, 6) (Note 1, 5, 6) NOTES: 1. Pulse test, 300µs max 2. Absolute value 3. Gamma = 300KRAD(Si) 4. Gamma = 10KRAD(Si) for "D", 100KRAD(Si) for "R". Neutron = 3E13 5. Gamma = 1000KRAD(Si). Neutron = 3E13 6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS 7. Gamma data taken 6/8/90 on TA17761 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989 9. Neutron derivation, Intersil Application Note AN8831, Oct. 1988 SYMBOL BVDSS BVDSS VGS(th) VGS(th) IGSSF IGSSF IGSSR IGSSR IDSS IDSS VDS(on) VDS(on) RDS(on) RDS(on) TYPE FRE9160D, R FRE9160H FRE9160D, R FRE9160H FRE9160D, R FRE9160H FRE9160D, R FRE9160H FRE9160D, R FRE9160H FRE9160D, R FRE9160H FRE9160D, R FRE9160H TEST CONDITIONS VGS = 0, ID = 1mA VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = VDS, ID = 1mA VGS = -20V, VDS = 0 VGS = -20V, VDS = 0 VGS = 20V, VDS = 0 VGS = 20V, VDS = 0 VGS = 0, VDS = -80V VGS = 0, VDS = -80V VGS = -10V, ID = 30A VGS = -16V, ID = 30A VGS = -10V, ID = 19A VGS = -14V, ID = 19A MIN -100 -95 -2.0 -2.0 MAX -4.0 -6.0 100 200 100 200 25 100 -2.99 -4.49 0.095 0.143 UNITS V V V V nA nA nA nA µA µA V V
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