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Details, datasheet, quote on part number:FRE9260D
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| Part: | FRE9260D |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel |
| Description: | 19a, -200v, 0.210 Ohm, Rad Hard, P-channel Power MOSFETs |
| Company: | Intersil Corporation |
| Datasheet: | Download FRE9260D datasheet File size : 49 kB |
| Request For quote: | Find where to buy FRE9260D
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Datasheet text preview:
FRE9260D, FRE9260R, FRE9260H
June 1998
19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs
Package
TO-258AA
Features
· 19A, -200V, RDS(on) = 0.210 · Second Generation Rad Hard MOSFET Results From New Design Concepts · Gamma Meets Pre-Rad Specifications to 100KRAD(SI) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 18.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2
· Gamma Dot · Photo Current · Neutron
Description
The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet.
Symbol
Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specified
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain-Gate Voltage (RGS = 20k). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL FRE9260D, R, H -200 -200 19 12 57 ±20 150 60 1.20 57 19 57 -55 to +150 300 UNITS V V A A A V W W W/oC A A A oC
oC
File Number 1
3269.2
FRE9260D, FRE9260R, FRE9260H
Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS PARAMETER Drain-Source Breakdown Volts Gate-Treshold Volts Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero-Gate Voltage Drain Current SYMBOL BVDSS VGS(th) IGSSF IGSSR IDSS1 IDSS2 IDSS3 IAR VDS(on) RDS(on) td(on) tr td(off) tf QG(th) QG(on) QGM VGP QGS QGD VSD TT Rjc Rja Free Air Operation ID = 19A, VGD = 0 I = 19A; di/dt = 100A/µs VDD = -100V, ID = 19A IGS1 = IGS2 0 VGS 20 TEST CONDITIONS VGS = 0, ID = 1mA VDS = VGS, ID = 1mA VGS = -20V VGS = +20V VDS = -200V, VGS = 0 VDS = -160V, VGS = 0 VDS = -160V, VGS = 0, TC = +125oC Time = 20µs VGS = -10V, ID = 19A VGS = -10V, ID = 12A VDD = -100V, ID = 19A Pulse Width = 3µs Period = 300µs Rg = 10 0 VGS 10 (See Test Circuit) MIN -200 -2.0 4 94 182 -3 21 52 -0.6 MAX -4.0 100 100 1 0.025 0.25 57 -4.19 0.210 100 700 400 300 16 376 728 -16 86 210 -1.8 1200 0.83 48 V ns
oC/W
UNITS V V nA nA mA
Rated Avalanche Current Drain-Source On-State Volts Drain-Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate-Charge Threshold Gate-Charge On State Gate-Charge Total Plateau Voltage Gate-Charge Source Gate-Charge Drain Diode Forward Voltage Reverse Recovery Time Junction-To-Case Junction-To-Ambient
A V ns
nc
V nc
ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDD VDS L RL VDS 0V DUT + CURRENT I TRANSFORMER AS
-
VARY tP TO OBTAIN REQUIRED PEAK IAS 0V tP
50
+
DUT 50
VDD
VGS = -12V
RGS VGS 20V
50V -150V
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
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FRE9260D, FRE9260R, FRE9260H
Post-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS PARAMETER Drain-Source Breakdown Volts (Note 4, 6) (Note 5, 6) Gate-Source Threshold Volts (Note 4, 6) (Note 3, 5, 6) Gate-Body Leakage Forward (Note 4, 6) (Note 5, 6) Gate-Body Leakage Reverse (Note 2, 4, 6) (Note 2, 5, 6) Zero-Gate Voltage Drain Current (Note 4, 6) (Note 5, 6) Drain-Source On-State Volts (Note 1, 4, 6) (Note 1, 5, 6) Drain-Source On Resistance (Note 1, 4, 6) (Note 1, 5, 6) NOTES: 1. Pulse test, 300µs max 2. Absolute value3. Gamma = 300KRAD(Si) 4. Gamma = 10KRAD(Si) for "D", 100KRAD(Si) for "R" Neutron = 1E13 5. Gamma = 1000KRAD(Si) Neutron = 1E13 6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS 7. Gamma data taken 6/12/90 on TA 17762 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989 9. Neutron derivation, Intersil Application Note AN-8831, Oct. 1988 SYMBOL BVDSS BVDSS VGS(th) VGS(th) IGSSF IGSSF IGSSR IGSSR IDSS IDSS VDS(on) VDS(on) RDS(on) RDS(on) TYPE FRE9260D, R FRE9260H FRE9260D, R FRE9260H FRE9260D, R FRE9260H FRE9260D, R FRE9260H FRE9260D, R FRE9260H FRE9260D, R FRE9260H FRE9260D, R FRE9260H TEST CONDITIONS VGS = 0, ID = 1mA VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = VDS, ID = 1mA VGS = - 20V, VDS = 0 VGS = - 20V, VDS = 0 VGS = 20V, VDS = 0 VGS = 20V, VDS = 0 VGS = 0, VDS = -160V VGS = 0, VDS = -160V VGS = -10V, ID = 19A VGS = -16V, ID = 19A VGS = -10V, ID = 12A VGS = -14V, ID = 12A MIN -200 -190 -2.0 -1.5 MAX -4.0 -4.5 100 200 100 200 25 100 -4.19 -6.28 .210 .315 UNITS V V V V nA nA nA nA µA µA V V
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