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Details, datasheet, quote on part number:FSJ9160R3
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| Part: | FSJ9160R3 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N/P-Channel Combo |
| Description: | 44a, -100v, 0.055 Ohm, Rad Hard, Segr Resistant, P-channel Power MOSFETs |
| Company: | Intersil Corporation |
| Datasheet: | Download FSJ9160R3 datasheet File size : 48 kB |
| Request For quote: | Find where to buy FSJ9160R3
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Datasheet text preview:
FSJ9160D, FSJ9160R
June 1998
44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.
Features
· 44A, -100V, rDS(ON) = 0.055 · Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) · Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias · Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM · Photo Current - 10.0nA Per-RAD(Si)/s Typically · Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2
RAD LEVEL 10K 10K 100K 100K 100K SCREENING LEVEL Commercial TXV Commercial TXV Space PART NUMBER/BRAND FSJ9160D1 FSJ9160D3 FSJ9160R1 FSJ9160R3 FSJ9160R4
Symbol
D
G
Formerly available as type TA17766.
S
Package
TO-254AA
G
S D
CAUTION: Ber yllia Warning per MIL-S-19500 refer to package specifications.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
File Number
4465.1
3-227
FSJ9160D, FSJ9160R
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) FSJ9160D, FSJ9160R -100 -100 44 28 132 ±20 192 77 1.54 132 44 132 -55 to 150 300 UNITS V V A A A V W W W/ oC A A A oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC MIN -100 -2.0 -1.0 VGS = 0V to -20V VGS = 0V to -12V VGS = 0V to -2V VDD = -50V, ID = 44A ID = 44A, VDS = -15V VDS = -25V, VGS = 0V, f = 1MHz TYP 0.039 200 40 74 -7 5500 1500 500 MAX -7.0 -6.0 25 250 100 200 -2.66 0.055 0.092 40 80 100 45 400 230 17 55 98 0.65 40 UNITS V V V V µA µA nA nA V ns ns ns ns nC nC nC nC nC V pF pF pF
oC/W oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current
IDSS IGSS VDS(ON) rDS(ON)12 td(ON) tr td(OFF) tf Qg (TOT) Qg (12) Qg (TH) Qgs Qgd V(PLATEAU) CISS COSS CRSS RJC RJA
VDS = -80V, VGS = 0V VGS = ±20V
Gate to Source Leakage Current
Drain to Source On-State Voltage Drain to Source On Resistance
VGS = -12V, ID = 44A ID = 28A, VGS = -12V
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge at 12V Threshold Gate Charge Gate Charge Source Gate Charge Drain Plateau Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
VDD = -50V, ID = 44A, RL = 1.14, VGS = -12V, RGS = 2.35
3-228
FSJ9160D, FSJ9160R
Source to Drain Diode Specifications
PARAMETER Forward Voltage Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD = 44A ISD = 44A, dISD/dt = 100A/µs MIN -0.6 TYP MAX -1.8 230 UNITS V ns
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Leakage Zero Gate Leakage Drain to Source On-State Volts Drain to Source On Resistance NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. In Situ Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . (Note 3) (Note 3) (Notes 2, 3) (Note 3) (Notes 1, 3) (Notes 1, 3) SYMBOL BVDSS VGS(TH) IGSS IDSS VDS(ON) rDS(ON)12 TEST CONDITIONS VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = ±20V, VDS = 0V VGS = 0, VDS = -80V VGS = -12V, ID = 44A VGS = -12V, ID = 28A MIN -100 -2.0 MAX -6.0 100 25 -2.66 0.055 UNITS V V nA µA V
Single Event Effects (SEB, SEGR) (Note 4)
ENVIRONMENT (NOTE 5) ION SPECIES Ni Br Br Br NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (Typ), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE (µ) 43 36 36 36 APPLIED VGS BIAS (V) 20 10 15 20 (NOTE 6) MAXIMUM VDS BIAS (V) -100 -100 -80 -50
TEST Single Event Effects Safe Operating Area
SYMBOL SEESOA
Typical Performance Curves
Unless Otherwise Specified
1E-3 LIMITING INDUCTANCE (HENRY)
-120 -100 -80 VDS (V) -60 -40 -20 0 0
LET = 26MeV/mg/cm2, RANGE = 43µ LET = 37MeV/mg/cm2, RANGE = 36µ FLUENCE = 1E5 IONS/cm2 (TYPICAL)
1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6
TEMP = 25oC 5 10 VGS (V) 15 20 25
1E-7 -10
-30
-100 DRAIN SUPPLY (V)
-300
-1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS
3-229
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