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Details, datasheet, quote on part number:FSL110R
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| Part: | FSL110R |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => DMOS (Double-diffused MOS) => Enhancement N-Channel |
| Description: | 3.5a, 100v, 0.600 Ohm, Rad Hard, Segr Resistant, N-channel Power MOSFETs |
| Company: | Intersil Corporation |
| Datasheet: | Download FSL110R datasheet File size : 60 kB |
| Request For quote: | Find where to buy FSL110R
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Datasheet text preview:
FSL110D, FSL110R
Data Sheet October 1998 File Number 4224.3
3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.
Features
· 3.5A, 100V, rDS(ON) = 0.600 · Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) · Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias · Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM · Photo Current - 0.3nA Per-RAD(Si)/s Typically · Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2
Symbol
D
G
S
Ordering Information
RAD LEVEL 10K 10K 100K 100K 100K SCREENING LEVEL Commercial TXV Commercial TXV Space PART NUMBER/BRAND FSL110D1 FSL110D3 FSL110R1 FSL110R3 FSL110R4
Package
TO-205AF
Formerly available as type TA17616.
G D S
4-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
FSL110D, FSL110R
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) FSL110D, FSL110R 100 100 3.5 2.5 10.5 ±20 15 6 0.12 10.5 3.5 10.5 -55 to 150 300 UNITS V V A A A V W W W/ oC A A A oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage SYMBOL BVDSS VGS(TH) TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC MIN 100 1.5 0.5 TYP VGS = 0V to 20V VGS = 0V to 12V VGS = 0V to 2V VDD = 50V, ID = 3.5A ID = 3.5A, VDS = 15V VDS = 25V, VGS = 0V, f = 1MHz 0.520 7.6 2.2 4.3 8 155 70 20 MAX 5.0 4.0 25 250 100 200 2.21 0.600 0.960 30 60 30 55 15 8.5 0.62 2.8 4.9 8.3 175 UNITS V V V V µA µA nA nA V ns ns ns ns nC nC nC nC nC V pF pF pF
oC/W oC/W
Zero Gate Voltage Drain Current
IDSS IGSS VDS(ON) rDS(ON)12 td(ON) tr td(OFF) tf Qg (TOT) Qg (12) Qg (TH) Qgs Qgd V(PLATEAU) CISS COSS CRSS RJC RJA
VDS = 80V, VGS = 0V VGS = ±20V VGS = 12V, ID = 3.5A ID = 2.5A, VGS = 12V VDD = 50V, ID = 3.5A, RL = 14.3, VGS 12V, RGS = 7.5
Gate to Source Leakage Current
Drain to Source On-State Voltage Drain to Source On Resistance
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge at 12V Threshold Gate Charge Gate Charge Source Gate Charge Drain Plateau Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
4-2
FSL110D, FSL110R
Source to Drain Diode Specifications
PARAMETER Forward Voltage Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD = 3.5A ISD = 3.5A, dISD/dt = 100A/µs MIN 0.6 TYP MAX 1.8 220 UNITS V ns
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Leakage Zero Gate Leakage Drain to Source On-State Volts Drain to Source On Resistance NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . (Note 3) (Note 3) (Notes 2, 3) (Note 3) (Notes 1, 3) (Notes 1, 3) SYMBOL BVDSS VGS(TH) IGSS IDSS VDS(ON) rDS(ON)12 TEST CONDITIONS VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = ±20V, VDS = 0V VGS = 0, VDS = 80V VGS = 12V, ID = 3.5A VGS = 12V, ID = 2.5A MIN 100 1.5 MAX 4.0 100 25 2.21 0.600 UNITS V V nA µA V
Single Event Effects (SEB, SEGR) (Note 4)
ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area SYMBOL SEESOA ION SPECIES Ni Br Br Br NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE (µ) 43 36 36 36 APPLIED VGS BIAS (V) -20 -10 -15 -20 (NOTE 6) MAXIMUM VDS BIAS (V) 100 100 80 50
Typical Performance Curves
Unless Otherwise Specified
1E-3
LET = 26MeV/mg/cm2, RANGE = 43µ LET = 37MeV/mg/cm2, RANGE = 36µ 120 100 80 VDS (V) 60 40 20 TEMP = 25oC 0 LIMITING INDUCTANCE (HENRY) FLUENCE = 1E5 IONS/cm2 (TYPICAL)
1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6
1E-7 0 -5 -10 VGS (V) -15 -20 -25 10 30 100 DRAIN SUPPLY (V) 300 1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS
4-3
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