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Details, datasheet, quote on part number:FSPS230F3
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| Part: | FSPS230F3 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | Radiation Hardened, Segr Resistant N-channel Power MOSFETs |
| Company: | Intersil Corporation |
| Datasheet: | Download FSPS230F3 datasheet File size : 84 kB |
| Request For quote: | Find where to buy FSPS230F3
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Datasheet text preview:
FSPL230R, FSPL230F
TM
D a ta Sheet
Ju n e 2000
F i l e Number
4865
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power FETs combine this electrical capability with total dose radiation hardness up to 300K RADs while maintaining the guaranteed performance for Single Event Effects (SEE) which the Intersil FS families have always featured.
TM
Features
· 9A, 200V, rDS(ON) = 0.170 · UIS Rated · Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Rated to 300K RAD (Si) · Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias · Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS · Photo Current - 3.0nA Per-RAD (Si)/s Typically · Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2
The Intersil por tfolio of Star*Power FETs includes a family of devices in various voltage, current and package styles. The Star*Power family consists of Star*Power and Star*Power Gold products. Star*Power FETS are optimized for total dose and rDS(ON) performance while exhibiting SEE capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for SEE and Gate Charge providing SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specifically designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. As with conventional MOSFETs these Radiation Hardened MOSFETs offer ease of voltage control, fast switching speeds and ability to parallel switching devices. Reliability screening is available as either TXV or Space equivalent of MIL-S-19500. Formerly available as type TA45210W.
Symbol
D
G
S
Packaging
TO-205AF
Ordering Information
RAD LEVEL 10K 100K 100K 300K 300K SCREENING LEVEL PART NUMBER/BRAND Engineering samples TXV Space TXV Space FSPL230D1 FSPL230R3 FSPL230R4 FSPL230F3 FSPL230F4
D G S
4-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000 Star*PowerTM is a trademark of Intersil Corporation.
FSPL230R, FSPL230F
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSPL230R, FSPL230F Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) Weight (Typical) 200 200 9 5 29 ±30 25 10 0.20 29 9 29 -55 to 150 300 1.0 (Typical) UNITS V V A A A V W W W/ oC A A A oC oC g
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC MIN 200 2.0 1.0 VGS = 0V to 12V VDD = 100V, ID = 9A VGS = 0V to 20V VGS = 0V to 2V ID = 9A, VDS = 15V VDS = 25V, VGS = 0V, f = 1MHz TYP 0.145 30 10 8 45 3 6.5 1400 230 8 MAX 5.5 4.5 25 250 100 200 1.58 0.170 0.313 20 40 35 15 33 12 10 5.0 UNITS V V V V µA µA nA nA V ns ns ns ns nC nC nC nC nC V pF pF pF
oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current
IDSS IGSS VDS(ON) rDS(ON)12 td(ON) tr td(OFF) tf Qg (12) Qgs Qgd Qg (20) Qg (TH) V(PLATEAU) CISS COSS CRSS RJC
VDS = 160V, VGS = 0V VGS = ±30V VGS = 12V, ID = 9A ID = 5A, VGS = 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage Drain to Source On Resistance
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge Source Gate Charge Drain Gate Charge at 20V Threshold Gate Charge Plateau Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case
VDD = 100V, ID = 9A, RL = 11, VGS = 12V, RGS = 7.5
4-2
FSPL230R, FSPL230F
Source to Drain Diode Specifications
PARAMETER Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL VSD trr QRR TEST CONDITIONS ISD = 9A ISD = 9A, dISD/dt = 100A/µs MIN TYP 1.2 MAX 1.5 210 UNITS V ns µC
Electrical Specifications up to 300K RAD TC = 25oC, Unless Otherwise Specified
MIN PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Leakage Zero Gate Leakage Drain to Source On-State Volts Drain to Source On Resistance NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . (Note 3) (Note 3) (Notes 2, 3) (Note 3) (Notes 1, 3) (Notes 1, 3) SYMBOL BVDSS VGS(TH) IGSS IDSS VDS(ON) rDS(ON)12 TEST CONDITIONS VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = ±30V, VDS = 0V VGS = 0, VDS = 160V VGS = 12V, ID = 9A VGS = 12V, ID = 5A 200 2.0 MAX 4.5 100 25 1.58 0.170 MIN 200 1.5 4.5 100 50 1.71 0.185 MAX UNITS V V nA µA V 100K RAD 300K RAD
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area SYMBOL SEESOA ION SPECIES Br Br I I Au Au NOTES: 4. Testing conducted at Brookhaven National Labs. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 37 37 60 60 82 82 TYPICAL RANGE (µ) 36 36 32 32 28 28 APPLIED VGS BIAS (V) -10 -15 -2 -8 0 -5 (NOTE 6) MAXIMUM VDS BIAS (V) 200 160 200 160 160 120
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm2, RANGE = 36µ LET = 60MeV/mg/cm2, RANGE = 32µ LET = 82MeV/mg/cm2, RANGE = 28µ 240 200 160 120 80 FLUENCE = 1E5 IONS/cm2 (TYPICAL) TEMP = 25oC VDS
240 LET = 37 BROMINE 200 160 120 80 LET = 82 GOLD 40
VDS (V)
40 0 0 0 -4 -8 VGS (V) -12 -16 -20 0 -5 -10
LET = 60 IODINE -15 VGS -20 -25 -30
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
4-3
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