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Details, datasheet, quote on part number:FSPYC260D1
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| Part: | FSPYC260D1 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | Radiation Hardened, Segr Resistant N-channel Power MOSFETs |
| Company: | Intersil Corporation |
| Datasheet: | Download FSPYC260D1 datasheet File size : 86 kB |
| Request For quote: | Find where to buy FSPYC260D1
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Datasheet text preview:
FSPYC260R, FSPYC260F
TM
D a ta Sheet
M ay 2000
F i l e Number
4850.1
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power FETs combine this electrical capability with total dose radiation hardness up to 300K RADS while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured. The Intersil por tfolio of Star*Power FETS includes a family of devices in various voltage, current and package styles. The Star*Power family consists of Star*Power and Star*Power Gold products. Star*Power FETS are optimized for total dose and rDS(ON) performance while exhibiting SEE capability at full rated voltage up to an LET of 37. Star*Power Gold FETS have been optimized for SEE and Gate Charge providing SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specifically designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. As with conventional MOSFETs these Radiation Hardened MOSFETs offer ease of voltage control, fast switching speeds and ability to parallel switching devices. Reliability screening is available as either, TXV or Space equivalent of MIL-S-19500. Formerly available as type TA45211W.
Features
· 58A, 200V, rDS(ON) = 0.031 · UIS Rated · Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Rated to 300K RAD (Si) · Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias · Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS · Photo Current - 17nA Per-RAD (Si)/s Typically · Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2
Symbol
D
G
S
Packaging
SMD2
Ordering Information
RAD LEVEL 10K 100K 100K 300K 300K SCREENING LEVEL Engineering samples TXV Space TXV Space PART NUMBER/BRAND FSPYC260D1 FSPYC260R3 FSPYC260R4 FSPYC260F3 FSPYC260F4
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Star*PowerTM is a trademark of Intersil Corporation. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
FSPYC260R, FSPYC260F
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) Weight (Typical) FSPYC260R, FSPYC260F 200 200 58 37 200 ±30 208 83 1.67 110 58 200 -55 to 150 300 3.3 (Typ) UNITS V V A A A V W W W/ oC A A A oC oC g
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA VDS = 160V, VGS = 0V VGS = ±30V VGS = 12V, ID = 58A ID = 37A, VGS = 12V TC = 25oC TC = 125oC TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC MIN 200 2.0 1.0 VGS = 0V to 12V VDD = 100V, ID = 58A VGS = 0V to 20V VGS = 0V to 2V ID = 58A, VDS = 15V VDS = 25V, VGS = 0V, f = 1MHz TYP 0.026 115 50 20 195 12 7.0 6500 1000 30 MAX 5.5 4.5 25 250 100 200 1.91 0.031 0.062 35 120 60 15 140 60 30 0.6 UNITS V V V V µA µA nA nA V ns ns ns ns nC nC nC nC nC V pF pF pF
oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On-State Voltage Drain to Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge Source Gate Charge Drain Gate Charge at 20V Threshold Gate Charge Plateau Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case
IDSS IGSS VDS(ON) rDS(ON)12 td(ON) tr td(OFF) tf Qg (12) Qgs Qgd Qg (20) Qg (TH) V(PLATEAU) CISS COSS CRSS RJC
VDD = 100V, ID = 58A, RL = 1.72, VGS = 12V, RGS = 2.35
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FSPYC260R, FSPYC260F
Source to Drain Diode Specifications
PARAMETER Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL VSD trr QRR ISD = 58A ISD = 58A, dISD/dt = 100A/µs TEST CONDITIONS MIN TYP 4.6 MAX 1.2 375 UNITS V ns µC
Electrical Specifications up to 300K RAD TC = 25oC, Unless Otherwise Specified
MIN PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Leakage Zero Gate Leakage Drain to Source On-State Volts Drain to Source On Resistance NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. In situ Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . (Note 3) (Note 3) (Notes 2, 3) (Note 3) (Notes 1, 3) (Notes 1, 3) SYMBOL BVDSS VGS(TH) IGSS IDSS VDS(ON) rDS(ON)12 TEST CONDITIONS VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = ±30V, VDS = 0V VGS = 0, VDS = 160V VGS = 12V, ID = 58A VGS = 12V, ID = 37A 200 2.0 MAX 4.5 100 25 1.91 0.031 MIN 200 1.5 4.5 100 50 2.26 0.035 MAX UNITS V V nA µA V 100K RAD 300K RAD
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area SYMBOL SEESOA ION SPECIES Br Br I I Au Au NOTES: 4. Testing conducted at Brookhaven National Labs. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 37 37 60 60 82 82 TYPICAL RANGE (µ) 36 36 32 32 28 28 APPLIED VGS BIAS (V) -10 -15 -2 -8 0 -5 (NOTE 6) MAXIMUM VDS BIAS (V) 200 160 200 160 160 120
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm2, RANGE = 36µ LET = 60MeV/mg/cm2, RANGE = 32µ LET = 82MeV/mg/cm2, RANGE = 28µ 240 200 160 120 80 40 0 0 -4 -8 VGS (V) -12 -16 -20 FLUENCE = 1E5 IONS/cm2 (TYPICAL) TEMP = 25oC
240 LET = 37 BROMINE 200 160 VDS (V) 120 80 40 0 0 -5 -10 -15 VGS (V) -20 -25 -30 LET = 82 GOLD
VDS (V)
LET = 60 IODINE
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
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