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Details, datasheet, quote on part number:HCTS30D
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Datasheet text preview:
HCTS30MS
August 1995
Radiation Hardened 8-Input NAND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW
A1 B2 C3 D4 E5 F6 GND 7 14 VCC 13 NC 12 H 11 G 10 NC 9 NC 8Y
Features
· 3 Micron Radiation Hardened SOS CMOS · Total Dose 200K RAD (Si) · SEP Effective LET No Upsets: >100 MEV-cm2/mg · Single Event Upset (SEU) Immunity 1 x · Dose Rate Upset >10
10
1012
RAD (Si)/s
RAD (Si)/s 20ns Pulse
· Latch-Up Free Under Any Conditions · Military Temperature Range: -55oC to +125oC · Significant Power Reduction Compared to LSTTL ICs · DC Operating Voltage Range: 4.5V to 5.5V · LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min · Input Current Levels Ii 5µA at VOL, VOH
A
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP3-F14 TOP VIEW
1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC NC H G NC NC Y
Description
The Intersil HCTS30MS is a Radiation Hardened 8-Input NAND Gate. A high on all input forces the output to a low state. The HCTS30MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.
B C D E F GND
Ordering Information
PART NUMBER HCTS30DMSR HCTS30KMSR HCTS30D/Sample HCTS30K/Sample HCTS30HMSR TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC +25oC +25oC +25oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample Sample Die PACKAGE 14 Lead SBDIP 14 Lead Ceramic Flatpack 14 Lead SBDIP 14 Lead Ceramic Flatpack Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
Spec Number File Number
440
518639 3056.1
HCTS30MS Functional Diagram
A B C D Y E F G H
TRUTH TABLE INPUTS A L X X X X X X X H B X L X X X X X X H C X X L X X X X X H D X X X L X X X X H E X X X X L X X X H F X X X X X L X X H G X X X X X X L X H H X X X X X X X L H OUTPUTS Y H H H H H H H H L
NOTE: L = Logic Level Low, H = Logic level High, X = Don't Care
Spec Number 441
518639
Specifications HCTS30MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance JA JC SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/oC
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (tr, tf) . . . . . . . 100ns/V Max Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2, 3 Output Current (Sink) IOL VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V 1 2, 3 Output Current (Source) IOH VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V VCC = 4.5V, VIH = 2.25V, IOL = 50µA, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOL = 50µA, VIL = 0.8V Output Voltage High VOH VCC = 4.5V, VIH = 2.25V, IOH = -50µA, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOH = -50µA, VIL = 0.8V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND 1 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC MIN 4.8 4.0 -4.8 -4.0 MAX 10 200 0.1 UNITS µA µA mA mA mA mA V
PARAMETER Quiescent Current
SYMBOL ICC
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
1, 2, 3
+25oC, +125oC, -55oC
VCC -0.1 VCC -0.1 -
-
V
1, 2, 3
+25oC, +125oC, -55oC
-
V
1 2, 3
+25oC +125oC, -55oC +25oC, +125oC, -55oC
±0.5 ±5.0 -
µA µA -
Noise Immunity Functional Test NOTES:
FN
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V (Note 2)
7, 8A, 8B
1. All voltages reference to device GND. 2. For functional tests VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
Spec Number 442
518639
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