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Details, datasheet, quote on part number:HCTS30KMSR
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Datasheet text preview:
TM
HCTS30MS
Radiation Hardened 8-Input NAND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW
A1 B2 C3 D4 E5 F6 G ND 7 14 VCC 13 NC 12 H 11 G 10 NC 9 NC 8Y
August 1995
Features
· 3 Micron Radiation Hardened SOS CMOS · Total Dose 200K RAD (Si) · SEP Effective LET No Upsets: >100 MEV-cm2/mg · Single Event Upset (SEU) Immunity 1 x · Dose Rate Upset >1010 1012 RAD (Si)/s
RAD (Si)/s 20ns Pulse
· Latch-Up Free Under Any Conditions · Military Temperature Range: -55oC to +125 oC · Significant Power Reduction Compared to LSTTL ICs · DC Operating Voltage Range: 4.5V to 5.5V · LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min · Input Current Levels Ii 5µA at VOL, VOH
A
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP3-F14 TOP VIEW
1 2 3 4 5 6 7 14 13 12 11 10 9 8 V CC NC H G NC NC Y
Description
The Intersil HCTS30MS is a Radiation Hardened 8-Input NAND Gate. A high on all input forces the output to a low state. The HCTS30MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.
B C D E F G ND
Ordering Information
PART NUMBER HCTS30D MS R HCTS30K MS R HCTS30D /Sample HCTS30K /Sample HCTS30H MS R TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC +25oC +25oC +25oC SCREEN ING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample Sample Die P ACKAGE 14 Lead SBDIP 14 Lead Ceramic Flatpack 14 Lead SBDIP 14 Lead Ceramic Flatpack Di e
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002. All Rights Reserved
Spec Number
440
518639 FN3056.1
HCTS30MS Functional Diagram
A B C D Y E F G H
TRUTH TABLE INPUTS A L X X X X X X X H B X L X X X X X X H C X X L X X X X X H D X X X L X X X X H E X X X X L X X X H F X X X X X L X X H G X X X X X X L X H H X X X X X X X L H OUTPUTS Y H H H H H H H H L
NOTE: L = Logic Level Low, H = Logic level High, X = Don't Care
Spec Number 441
518639
Specifications HCTS30MS
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . . ±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . . ±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance JA J C SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/oC
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent dama ge. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed unde r "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (tr, tf) . . . . . . . 100ns/V Max Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2, 3 Output Current (Sink) IOL VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V 1 2, 3 Output Current (Source) IOH VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V VCC = 4.5V, VIH = 2.25V, IOL = 50µA, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOL = 50µA, VIL = 0.8V Output Voltage High VOH VCC = 4.5V, VIH = 2.25V, IOH = -50µA, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOH = -50µA, VIL = 0.8V Input Leakage Curr ent IIN VCC = 5.5V, VIN = VCC or GND 1 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC , +125oC, -55oC +25oC , +125oC, -55oC +25oC , +125oC, -55oC +25oC , +125oC, -55oC +25oC +125oC, -55oC +25oC , +125oC, -55oC MIN 4.8 4.0 -4.8 -4.0 M AX 10 200 0.1 UNITS µA µA mA mA mA mA V
PA RAME TER Quiescent Current
SYMBOL ICC
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND
Output Voltage Low
V OL
1, 2, 3
-
0.1
V
1, 2, 3
VCC -0.1 VCC -0.1 -
-
V
1, 2, 3
-
V
1 2, 3
±0.5 ±5.0 -
µA µA -
Noise Immunity Functional Test NOTES :
FN
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V (Note 2)
7, 8A, 8B
1. All voltages reference to device GND. 2. For functional tests VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
Spec Number 442
518639
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