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Details, datasheet, quote on part number:HCTS32DMSR
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Datasheet text preview:
TM
HCTS32MS
Radiation Hardened Quad 2-Input OR Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW
A1 1 B1 2 Y1 3 A2 4 B2 5 Y2 6 GND 7 14 VCC 13 B4 12 A4 11 Y4 10 B3 9 A3 8 Y3
September 1995
Features
· 3 Micron Radiation Hardened SOS CMOS · Total Dose 200K RAD (Si) · SEP Effective LET No Upsets: >100 MEV-cm2/mg · Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s · Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse · Latch-Up Free Under Any Conditions · Military Temperature Range: -55oC to +125oC · Significant Power Reduction Compared to LSTTL ICs · DC Operating Voltage Range: 4.5V to 5.5V · LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min · Input Current Levels Ii 5µA @ VOL, VOH
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP3-F14 TOP VIEW
A1 B1 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC B4 A4 Y4 B3 A3 Y3
Description
The Intersil HCTS32MS is a Radiation Hardened Quad 2-Input OR Gate. A Low on all inputs forces the output to a Low state. The HCTS32MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS32MS is supplied in a 14 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).
Y1 A2 B2 Y2 GND
Functional Diagram
An (1, 4, 9, 12)
Ordering Information
PART NUMBER HCT S3 2DMS R HCTS32KMSR TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent S ample S ample PACKAGE 14 Lead SBDIP TRUTH TABLE 14 Lead Ceramic Flatpack 14 Lead SBDIP 14 Lead Cer amic Flatpack Die INPUTS An L L H H Bn L H L H
Bn (2, 5, 10, 13)
Yn (3, 6, 8, 11)
OUTPUTS Yn L H H H DB NA
HCTS32D/ S a mp l e HCTS32K/ S a mp l e HCT S3 2HMS R
+25oC +25oC
+25oC
Die
NOTE: L = Logic Level Low, H = Logic level High
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002. All Rights Reserved 1
Spec Number File Number
518638 2248.2
Specifications HCTS32MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . . ±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . . ±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance JA JC SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/oC
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . 100ns/V Max Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUP S 1 2, 3 Output Current (Sink) IOL VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V (Note 3) VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V (Note 3) VCC = 4.5V, VIH = 2.25V, IOL = 50µA, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOL = 50µA, VIL = 0.8V Output Voltage High VOH VCC = 4.5V, VIH = 2.25V, IOH = -50µA, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOH = -50µA, VIL = 0.8V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND 1 2, 3 1 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC MI N 4.8 4.0 -4.8 -4.0 MA X 10 200 0.1 UNITS µA µA mA mA mA mA V
PARAMETER Quiescent Current
SYMBOL I CC
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND
Output Current (Source)
IOH
Output Voltage Low
VOL
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
1, 2, 3
+25oC, +125oC, -55oC
VCC -0.1 VCC -0.1 -
-
V
1, 2, 3
+25oC, +125oC, -55oC
-
V
1 2, 3
+25oC +125oC, -55oC +25oC, +125oC, -55oC
±0.5 ±5.0 -
µA µA -
Noise Immunity Functional Test NOTES:
FN
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V (Note 2)
7, 8A, 8B
1. All voltages reference to device GND. 2. For functional tests VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0". 3. Force/Measure functions may be interchanged.
Spec Number 2
518638
Specifications HCTS32MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUP S 9 10, 11 Input to Output TPLH VCC = 4.5V 9 10, 11 NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input tr = tf = 3ns, VIL = GND, VIH = 3V. LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC MI N 2 2 2 2 MA X 18 20 20 22 UNITS ns ns ns ns
PARAMETER Input to Output
SYMBOL TPHL
(NOTES 1, 2) CONDITIONS VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation SYMBOL CPD CONDITIONS VCC = 5.0V, f = 1MHz NOTES 1 1 Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 1 Output Transition Time TTHL TTLH VCC = 4.5V 1 1 NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TEMPERATURE +25oC +125oC, -55oC +25oC + 125o C +25oC + 125o C MI N MA X 30 45 10 10 15 22 UNITS pF pF pF pF ns ns
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS PARAMETER Quiescent Current Output Current (Sink) SYMBOL I CC IOL (NOTES 1, 2) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V , IOL = 50µA VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V, IOH = -50µA VCC = 5.5V, VIN = VCC or GND TEMPERATURE +25oC +25oC MI N 4.0 MA X 0.2 UNITS mA mA
Output Current (Source) Output Voltage Low
IOH
+25oC
-4.0
-
mA
VOL
+25oC
-
0.1
V
Output Voltage High
VOH
+25oC
VCC -0.1 -
-
V
Input Leakage Current
IIN
+25oC
±5
µA
Spec Number 3
518638
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