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Part: HCTS374D
Category:
Power Management
-> Regulators
-> Linear Regulators
-> Positive
Description: Radiation Hardened Octal D-type Flip-Flop, Three-state, Positive Edge Triggered
Company: Intersil Corporation
Datasheet: Download HCTS374D datasheet File size : 173 kB
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Datasheet text preview:
HCTS374MS
August 1995
Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T20 TOP VIEW
OE Q0 D0 D1 Q1 Q2 D2 D3 Q3 1 2 3 4 5 6 7 8 9 20 VCC 19 Q7 18 D7 17 D6 16 Q6 15 Q5 14 D5 13 D4 12 Q4 11 CP
Features
· 3 Micron Radiation Hardened SOS CMOS · Total Dose 200K RAD (Si) · SEP Effective LET No Upsets: >100 MEV-cm2/mg · Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s · Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse · Latch-Up Free Under Any Conditions · Fanout (Over Temperature Range) - Bus Driver Outputs - 15 LSTTL Loads · Military Temperature Range: -55oC to +125oC · Significant Power Reduction Compared to LSTTL ICs · DC Operating Voltage Range: 4.5V to 5.5V · LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min · Input Current Levels Ii 5µA at VOL, VOH
GND 10
Description
The Intersil HCTS374MS is a Radiation Hardened non-inverting octal D-type, positive edge triggered flip-flop with three-stateable outputs. The eight flip-flops enter data into their registers on the LOW-to-HIGH transition of the clock (CP). Data is also transferred to the outputs during this transition. The output enable (OE) controls the three-state outputs and is independent of the register operation. When the output enable is high, the outputs are in the high impedance state. The HCTS374MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS374MS is supplied in a 20 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).
OE Q0 D0 D1 Q1 Q2 D2 D3 Q3 GND
20 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F20 TOP VIEW
1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 VCC Q7 D7 D6 Q6 Q5 D5 D4 Q4 CP
Ordering Information
PART NUMBER HCTS374DMSR HCTS374KMSR HCTS374D/Sample HCTS374K/Sample HCTS374HMSR TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC +25oC +25oC +25oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample Sample Die PACKAGE 20 Lead SBDIP 20 Lead Ceramic Flatpack 20 Lead SBDIP 20 Lead Ceramic Flatpack Die DB NA
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number File Number
650
518635 2134.2
HCTS374MS Functional Diagram
1 OF 8 (3, 4, 7, 8, 13, 14, 17, 18) D COMMON CONTROLS CP 11 FF D Q OE Q (2, 5, 6, 9, 12, 15, 16, 19)
CP
OE 1
TRUTH TABLE INPUTS OE L L L H H =High Level (Steady State) L =Low Level (Steady State) X =Immaterial Z =High Impedance = Transition from Low to High Level Q0 =The level of Q before the indicated input conditions were established L X CP Dn H L X X OUTPUTS Qn H L Q0 Z
Spec Number 651
518635
Specifications HCTS374MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance JA JC SBDIP Package. . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 107oC/W 28oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/oC
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . 500ns Max. Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2, 3 Output Current (Sink) IOL VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V 1 2, 3 Output Current (Source) IOH VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V VCC = 4.5V, VIH = 2.25V, IOL = 50µA, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOL = 50µA, VIL = 0.8V Output Voltage High VOH VCC = 4.5V, VIH = 2.25V, IOH = -50µA, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOH = -50µA, VIL = 0.8V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND 1 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC MIN 7.2 6.0 -7.2 -6.0 MAX 40 750 0.1 UNITS µA µA mA mA mA mA V
PARAMETER Quiescent Current
SYMBOL ICC
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
1, 2, 3
+25oC, +125oC, -55oC
VCC -0.1 VCC -0.1 -
-
V
1, 2, 3
+25oC, +125oC, -55oC
-
V
1 2, 3
+25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC
±0.5 ±5.0 ±1 ±50 -
µA µA µA µA -
Three-State Output Leakage Current
IOZ
Applied Voltage = 0V or VCC, VCC = 5.5V
1 2, 3
Noise Immunity Functional Test NOTES:
FN
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V (Note 2)
7, 8A, 8B
1. All voltages reference to device GND. 2. For functional tests VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
Spec Number 652
518635
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