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Details, datasheet, quote on part number:HS-508ARH-T
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| Part: | HS-508ARH-T |
| Category: | Analog & Mixed-Signal Processing => Switches & Multiplexers => Analog Multiplexers/Demultiplexers => Multiplexers |
| Description: | Radiation Hardened 8 Channel CMOS Analog Multiplexer With Overvoltage Protection |
| Company: | Intersil Corporation |
| Datasheet: | Download HS-508ARH-T datasheet File size : 80 kB |
| Request For quote: | Find where to buy HS-508ARH-T
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Datasheet text preview:
TM
HS-508A RH-T
D a t a Sheet J ul y 1999 F N46 05.1
Radiation Hardened 8 Channel CMOS Analog Multiplexer with Overvoltage Protection
Intersil`s Satellite Applications Flow TM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. This QML Class T device is processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The HS-508ARH-T is a dielectrically isolated, radiation hardened, CMOS analog multiplexer incorporating an important feature; it withstands analog input voltages much greater than the supplies. This is essential in any system where the analog inputs originate outside the equipment. They can withstand a continuous input up to 10V greater than either supply, which eliminates the possibility of damage when supplies are off, but input signals are present. Equally important, it can withstand brief input transient spikes of several hundred volts; which otherwise would require complex external protection networks. Necessarily, ON resistance is somewhat higher than similar unprotected devices, but very low leakage current combine to produce low errors. Reference Application Notes 520 and 521, available from the Semiconductor Products Division of Intersil, for further information on the HS-508ARH-T multiplexer in general.
Features
· QM L Class T, Per MIL-PRF-38535 · Radiation Performance - Gamma Dose () 1 x 105 RAD(Si) - No Latch-Up, Dielectrically Isolated Device Islands - SEP LET > 110MeV/mg/cm2 · Analog/Digital Overvoltage Protection · Fail Safe with Power Loss (No Latchup) · Break-Before-M ake Switching · DTL/TTL and CMOS Compatible · Analog Signal Range ±15V · Fast Access Time · Supply Current at 1MHz Address Toggle (Typ) 4mA · Standby Power (Typ.) 7.5mW
Pinouts
HS1-508ARH-T (SBDIP), CDIP2-T16 TOP VIEW
AO EN VIN 1 IN 2 IN 3 IN 4 O UT 1 2 3 4 5 6 7 8 16 A1 15 A2 14 GND 13 V+ 12 IN 5 11 IN 6 10 IN 7 9 IN 8
Specifications
Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the HS-508ARH-T are contained in SMD 5962-96742. A "hot-link" is provided from our website for downloading. www.intersil.com/spacedefense/newsafclasst.asp Intersil`s Quality Management Plan (QM Plan), listing all Class T screening operations, is also available on our website. www.intersil.com/quality/manuals.asp
HS9- 508ARH-T (FLATPACK), CDFP4-F16 TOP VIEW
A0 EN VIN1 IN2 IN3 IN4 O UT 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 A1 A2 G ND V+ IN5 IN6 IN7 IN8
Ordering Information
ORDERING NUMBER 5962R9674201TE C 5962R9674201TX C PART NUMBER HS 1-508ARH-T HS 9-508ARH-T TEMP. RANGE (oC) -55 to 125 -55 to 125
distribution, or 450 units direct.
NOTE: Minimum order quantity for -T is 150 units through
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002. All Rights Reserved Satellite Applications FlowTM (SAF) is a trademark of Intersil Corporation.
HS-508ARH-T Functional Diagram
IN 1
A0
1
P
N
DIGITAL ADDRESS
A1 OUT A2
EN ADDRESS INPUT BUFFER AND LEVEL SHIFTER
8 P DECODERS N IN 8
MULTIPLEX SWITCHES
TRUTH TABLE A2 X L L L L H H H H A1 X L L H H L L H H A0 X L H L H L H L H EN L H H H H H H H H ``ON'' CHANNEL NO NE 1 2 3 4 5 6 7 8
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HS-508ARH-T Die Characteristics
DIE DIMENSIONS: (2108µm x 2743µm x 279µm ±25.4µm) 83 x 108 x 11mils ±1mil METALLIZATION: Type: Al Si Thickness: 12.5kÅ ±2kÅ SUBSTRATE POTENTIAL: Unbiased (DI) BACKSIDE FINISH: Silicon PASSIVATIO N: Type: Silox (SiO2) Thickness: 8.0kÅ ±1.0kÅ WORST CASE CURRENT DENSITY: 6.68e4 A/cm2 TRANSISTOR COUNT: 253 PROCESS: CMOS- DI
Metallization Mask Layout
HS-508A RH-T I N2 I N1 V-
I N3 I N4 EN OUT
A0 A1 I N8 I N7 I N6 A2
IN5
V+
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com 3
GND
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