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Part: HS0-508BRH-Q
Category: Power Management -> broadband power
Description: Radiation Hardened 8 Channel CMOS Analog Multiplexer With Overvoltage Protection
Company: Intersil Corporation
Datasheet: Download HS0-508BRH-Q datasheet File size : 127 kB
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Datasheet text preview:
HS-508BRH
TM
D a ta Sheet
J a nu a r y 2001
F i l e Number
4824.1
Radiation Hardened 8 Channel CMOS Analog Multiplexer with Overvoltage Protection
The HS-508BRH is a dielectrically isolated, radiation hardened, CMOS analog multiplexer incorporating an important feature; it withstands analog input voltages much greater than the supplies. This is essential in any system where the analog inputs originate outside the equipment. They can withstand a continuous input up to 10V greater than either supply, which eliminates the possibility of damage when supplies are off, but input signals are present. Equally important, it can withstand brief input transient spikes of several hundred volts; which otherwise would require complex external protection networks. Necessarily, ON resistance is somewhat higher than similar unprotected devices, but very low leakage current combine to produce low errors. Reference Application Notes 520 and 521 for further information on the HS-508BRH multiplexer in general. The HS-508BRH has been specifically designed to meet exposure to radiation environments. Operation from -55oC to 125oC is guaranteed.
Features
· Electrically Screened to SMD # 5962-96742 · QML Qualified per MIL-PRF-38535 Requirements · Radiation Environment - Gamma Dose () . . . . . . . . . . . . . . . . . 3 x 105 Rad (Si) - Dielectrically Isolated Device Islands - SEP >100 Mev-mg/cm2 · Analog/Digital Overvoltage Protection · ESD Rated to 3kV · Fail Safe with Power Loss (No Latchup) · Break-Before-Make Switching · DTL/TTL and CMOS Compatible · Analog Signal Range . . . . . . . . . . . . . . . . . . . . . . . . . . . .±15V · Fast Access Time · Supply Current at 1MHz Address Toggle . . . . . .4mA (Typ) · Standby Power . . . . . . . . . . . . . . . . . . . . . . . .7.5mW (Typ) Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-96742. A "hot-link" is provided on our homepage for downloading. www.intersil.com/spacedefense/newsafclasst.asp
Ordering Information
ORDERING NUMBER 5962F9674202QEC 5962F9674202QXC 5962F9674202VEC 5962F9674202VXC INTERNAL MKT. NUMBER HS1-508BRH-8 HS9-508BRH-8 HS1-508BRH-Q HS9-508BRH-Q TEMP. RANGE (oC) -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125
HS1-508BRH/PROTO HS1-508BRH/PROTO HS9-508BRH/PROTO HS9-508BRH/PROTO
Pinouts
HS1-508BRH 16 LEAD SIDEBRAZE DIP MIL-STD-1835, CDIP2-T16 TOP VIEW
AO 1 EN 2 -VSUP 3 IN 1 4 IN 2 5 IN 3 6 IN 4 7 OUT 8 16 A1 15 A2 14 GND 13 +VSUP 12 IN 5 11 IN 6 10 IN 7 9 IN 8 A0 EN -VSUP IN1 IN2 IN3 IN4 OUT
HS9-508BRH 16 LEAD FLATPACK MIL-STD-1835, CDFP4-F16 TOP VIEW
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 A1 A2 GND +VSUP IN5 IN6 IN7 IN8
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2001
HS-508BRH Functional Diagram
IN 1
A0 1 DIGITAL ADDRESS
P
N
A1 OUT
A2
EN
8 P ADDRESS INPUT BUFFER AND LEVEL SHIFTER DECODERS N IN 8
MULTIPLEX SWITCHES
TRUTH TABLE A2 X L L L L H H H H A1 X L L H H L L H H A0 X L H L H L H L H EN L H H H H H H H H "ON" CHANNEL NONE 1 2 3 4 5 6 7 8
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HS-508BRH Die Characteristics
DIE DIMENSIONS 120 mils x 93 mils x 19 mils INTERFACE MATERIALS Glassivation Type: Phosphorus Silicon Glass (PSG) Thickness: 8kÅ ±1kÅ Top Metallization Type: AlSiCu Thickness: 16kÅ ±2kÅ Substrate Rad Hard Silicon Gate Dielectric Isolation Backside Finish Silicon ASSEMBLY RELATED INFORMATION Substrate Potential Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density 6.68e04 A/cm2 Transistor Count 506
Metallization Mask Layout
HS-508BRH IN2 IN1 -V
IN3
EN IN4 OUT
A0
IN8
A1
IN7
A2
IN6
IN5
+V
GND
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third par ties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Cor poration and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil Ltd. 8F-2, 96, Sec. 1, Chien-kuo North, Taipei, Taiwan 104 Republic of China TEL: 886-2-2515-8508 FAX: 886-2-2515-8369
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Others parts begin by hs
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