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Part: HS0-5104ARH-Q
Category:
Power Management
-> broadband power
Description: Radiation Hardened Low Noise Quad Operational Amplifier
Company: Intersil Corporation
Datasheet: Download HS0-5104ARH-Q datasheet File size : 127 kB
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Datasheet text preview:
HS-5104ARH
TM
D a t a Sheet
A u gu s t 2001
Fi l e Number
30 25. 4
Radiation Hardened Low Noise Quad Operational Amplifier tle 4A iadThe HS-5104ARH is a radiation hardened, monolithic quad operational amplifier that provides highly reliable performance in harsh radiation environments. Its excellent noise characteristics coupled with an unique array of dynamic specifications make this amplifier well-suited for a variety of satellite system applications. Dielectrically isolated, bipolar processing makes this device immune to Single Event Latch-Up. The HS-5104ARH shows almost no change in offset voltage after exposure to 100kRAD(Si) gamma radiation, with only a minor increase in current. Complementing these specifications is a post radiation open loop gain in excess of 40K. This quad operational amplifier is available in an industry standard pinout, allowing for immediate interchangeability with most other quad operational amplifiers. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95690. A "hot-link" is provided on our homepage for downloading. http://www.intersil.com
Features
· Electrically Screened to SMD # 5962-95690 · QM L Qualified per MIL-PRF-38535 Requirements · Radiation Environment - Gamma Dose () . . . . . . . . . . . . . . . . . 1 x 105RAD(Si) · Low Noise - At 1kHz . . . . . . . . . . . . . . . . . . . . . . . . 4.3nV/Hz (Typ) - At 1kHz . . . . . . . . . . . . . . . . . . . . . . . . 0.6pA/Hz (Typ) · Low Offset Voltage . . . . . . . . . . . . . . . . . . . . .3.0mV (Max) · High Slew Rate . . . . . . . . . . . . . . . . . . . . . . 2.0V/µs (Typ) · Gain Bandwidth Product . . . . . . . . . . . . . . . 8.0MHz (Typ)
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Applications
· High Q, Active Filters · Voltage Regulators · Integrators · Signal Generators · Voltage References · Space Environments
Ordering Information
ORDER ING NUMBER 5962R9569001V9A 5962R9569001VCC 5962R9569001VXC INTERNA L MKT. NUMBER HS0-5104ARH-Q HS1-5104ARH-Q HS9-5104ARH-Q TEMP. RANGE (oC) 25 -55 to 125 -55 to 125 -55 to 125
HS1-5104ARH/PROTO HS1-5104ARH/PROTO
Pinouts
HS -5104ARH (SBDIP) CDIP2-T14 TOP VIEW
O UT 1 -IN1 +IN1 V+ +IN2 -IN2 O UT 2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 OUT 4 -IN4 +IN4 V+IN3 -IN3 OUT 3 O UT 1 -IN1
HS-5104AR H (FLATPACK) CDFP3-F14 TOP VIEW
1 2 3 4 5 6 7 14 13 12 11 10 9 8 OUT 4 -IN4 +IN4 V+IN3 -IN3 OUT 3
d, L,
+IN1 V+ +IN2 -IN2 O UT 2
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2001, All Rights Reserved
HS-5104ARH Burn-In Circuit
1 2 R1 3 +V C1 4 D1 R2 5 6 7 + 2 3 + 1 + 4 + 14
Irradiation Circuit
+15V R4 12 11 R3 10 D2 C2 -V
-
-
13 +
-
-15V (ONE OF FOUR)
-
-
9 8
NOTES: 5. +V = 15V 6. -V = -15V 7. Group E Sample Size = 4 Die Per Wafer
NOTES : 1. R1 = R2 = R3 = R4 = 1MW, 5%, 1/4W (Min) 2. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min) 3. D1 = D2 = IN4002 or Equivalent/Board 4. |(V+) - (V-)| = 31V ±1V
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HS-5104ARH Die Characteristics
DIE DIMENSIONS: 95 mils x 99 mils x 19 mils ±1 mils (2420µm x 2530µm x 483µm ±25.4µm) INTERFACE MATERIALS: Glassivation: Type: Nitride (SI3N4) over Silox (SIO2, 5% Phos.) Silox Thickness: 12kÅ ±2kÅ Nitride Thickness: 3.5kÅ ±1.5kÅ Top Metallization: Type: Al, 1% Cu Thickness: 16kÅ ±2kÅ Substrate: Bipolar Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): Unbiased ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 x 105 A/cm 2 Transistor Count: 175
Metallization Mask Layout
HS-5104A RH
+IN2 V+ +I N1
-IN2
-IN1
OUT2 OUT3
OUT1 OUT4
-IN3
-IN4
+I N3
V-
+I N4
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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