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Part: HS1-1825ARH-Q
Category:
Others
-> Space Applications
Description: Radiation Hardened High-Speed, Dual Output PWM
Company: Intersil Corporation
Datasheet: Download HS1-1825ARH-Q datasheet File size : 127 kB
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Datasheet text preview:
®
HS-1825ARH
D a ta Sheet J u l y 2001 FN4561.6
Radiation Hardened High-Speed, Dual Output PWM
The Radiation Hardened HS-1825ARH Pulse Width Modulator is designed to be used in high frequency switched-mode power supplies and can be used in either current-mode or voltage-mode. It is well suited for singleended boost converter applications. Device features include a precision voltage reference, low power start-up circuit, high frequency oscillator, wide-band error amplifier, and fast current-limit comparator. The use of proprietary process capabilities and unique design techniques results in fast propagation delay times and high output current over a wide range of output voltages. Constructed with the Intersil Rad Hard Silicon Gate (RSG) Dielectric Isolation BiCMOS process, the HS-1825ARH has been specifically designed to provide highly reliable performance when exposed to harsh radiation environments. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the HS-1825ARH are contained in SMD 5962-99558. That document may be easily downloaded from our website. www.intersil.com/
Features
· Electrically Screened to DESC SMD # 5962-99558 · QML Qualified per MIL-PRF-38535 Requirements · Radiation Environment - Maximum Total Dose . . . . . . . . . . . . . . . . 300 krad(SI) - Vertical Architecture Provides Low Dose Rate Immunity - DI RSG Process Provides Latch-Up Immunity · Low Start-Up Current . . . . . . . . . . . . . . . . . . . 100µA (Typ) · Fast Propagation Delay . . . . . . . . . . . . . . . . . . 80ns (Typ) · 12V to 30V Operation · 1A (Peak) Dual Output Drive Capability · 5.1V Reference · Under-Voltage Lockout · Programmable Soft-Start · Switching Frequencies to 500kHz · Trimmed Oscillator Discharge Current · Latched Overcurrent Comparator with Full Cycle Restart · Programmable Leading Edge Blanking Circuit
Applications
· Current or Voltage Mode Switching Power Supplies · Motor Speed and Direction Control
Ordering Information
ORDERIN G NUMBER 5962F9955801VEC 5962F 9955801 QEC 5962F9955801VXC 5962F 9955801 QXC HS1- 1825ARH/Pr oto HS9- 1825ARH/Pr oto INTERSIL MKT. NUMBER HS1-1825ARH-Q HS1-1825ARH-8 HS9-1825ARH-Q HS9-1825ARH-8 HS1-1825ARH/Proto HS9-1825ARH/Proto TEMP. RANGE (oC) -50 to 125 -50 to 125 -50 to 125 -50 to 125 -50 to 125 -50 to 125
Pinout
HS-1825ARH SBDIP (CDIP2-T16) AND FLATPACK (CDFP4-F16) TOP VIEW
INV 1 NON-INV 2 E/A OUT 3 CLOCK 4 RT 5 CT 6 RAMP 7 SOFT START 8 16 VREF 5.1V 15 VCC 14 OUTPUT B 13 VC 12 POWER GND 11 OUTPUT A 10 GND 9 ILIM/SD
NOTE: Grounding the Soft Start pin does not inhibit the outputs. The outputs may be inhibited by applying >1.26V to the ILIM/SD pin.
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002. All Rights Reserved
HS-1825ARH Die Characteristics
DIE DIMENSIONS 4710µm x 3570µm (185 mils x 140 mils) Thickness: 483µm ±25.4µm (19 mils ±1 mil) INTERFACE MATERIALS Glassivation Type: PSG (Phosphorous Silicon Glass) Thickness: 8.0kÅ ±1.0kÅ Top Metallization Type: ALSiCu Thickness: 16.0kÅ ±2kÅ Substrate Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish Silicon ASSEMBLY RELATED INFORMATION Substrate Potential Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density <2.0 x 105 A/cm2 Transistor Count 225
HS-1825ARH
Metallization Mask Layout
RT (5)
(4) CLK/LEB (3) EAOUT
CT (6)
(2) IN+
RAMP (7) SS (8)
(1) IN-
(16) VREF ILIM (9) OSCGND (NOTE 1) GND (10) (14) OUTB OUTA (11) PGND (12) (NOTE 2) VC (13) (NOTE 2) (13) VC (NOTE 2) (12) PGND (NOTE 2) (15) VCC
NOTES: 1. This is the oscillator ground (OSCGND) bond pad and must be connected to GND. 2. PGND and VC each require two bond pad connections.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com 2
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