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Part: HS1-1840ARH-8
Category:
Others
-> Space Applications
Description: Radiation Hardened 16 Channel CMOS Analog Multiplexer With High-z Analog Input Protection
Company: Intersil Corporation
Datasheet: Download HS1-1840ARH-8 datasheet File size : 127 kB
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Datasheet text preview:
TM
HS-1840A RH-T
D a t a Sheet J ul y 1999 F N45 89.1
Radiation Hardened 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection
Intersil's Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The HS-1840ARH-T is a Radiation Hardened, monolithic 16 channel multiplexer constructed with the Intersil Rad-Hard Silicon Gate, Dielectric Isolation process. It is designed to provide a high input impedance to the analog source if device power fails (open), or the analog signal voltage inadvertently exceeds the supply by up to ±35V, regardless of whether the device is powered on or off. Selection of one of sixteen channels is controlled by a 4-bit binary address plus an Enable-Inhibit input, which conveniently controls the ON/OFF operation of several multiplexers in a system. All inputs have electrostatic discharge protection.
Features
· QM L Class T, Per MIL-PRF-38535 · Radiation Performance - Gamma Dose () 1 x 105 RAD(Si) - No Latch-Up, Dielectrically Isolated Device Islands · Improved rD S(O N) Linearity · Improved Access Time 1.5µs (Max) Over Temp and Rad · High Analog Input Impedance 500M During Power Loss (Open) · ±35V Input Over Voltage Protection (Power On or Off) · Excellent in Hi-Rel Redundant Systems · Break-Before-M ake Switching
Pinouts
HS1-1840ARH-T (SBDIP), CDIP2-T28 TOP VIEW
+VS 1 NC 2 NC 3 IN 16 4 IN 15 5 IN 14 6 IN 13 7 IN 12 8 IN 11 9 IN 10 10 IN 9 11 GND 12 (+5VS) VREF 13 ADDR A3 14 28 OUT 27 -VS 26 IN 8 25 IN 7 24 IN 6 23 IN 5 22 IN 4 21 IN 3 20 IN 2 19 IN 1 18 ENABLE 17 ADDR A0 16 ADDR A1 15 ADDR A2
Specifications
Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the HS-1840ARH-T are contained in SMD 5962-95630. For more information, visit us on our website at: www.intersil.com/ Intersil's Quality Management Plan (QM Plan), listing all Class T screening operations, is also available on our website. www.intersil.com/
Ordering Information
ORDERING NUM BE R 5962R9563002TX C HS 1-1840AR H/Proto 5962R9563002TY C HS 9-1840AR H/Proto PART NUMBER HS1- 1840ARH-T HS1- 1840ARH/Pr oto HS9- 1840ARH-T HS9- 1840ARH/Pr oto TEMP. RANGE (o C ) -55 to 125 -55 to 125 -55 to 125 -55 to 125 HS9-1840ARH-T (FLATPACK) CDFP3-F28 TOP VIEW
+V S NC NC IN 16 IN 15 IN 14 IN 13 IN 12 IN 11 IN 10 IN 9 G ND (+5VS) VREF ADDR A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 OUT -VS IN 8 IN 7 IN 6 IN 5 IN 4 IN 3 IN 2 IN 1 ENABLE ADDR A0 ADDR A1 ADDR A2
distribution, or 450 units direct.
NOTE: Minimum order quantity for -T is 150 units through
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002. All Rights Reserved
HS-1840ARH-T Functional Diagram
A0 1 P
IN 1
A1 DIGITAL ADDRESS A2 O UT
A3
EN
16
P IN 16
ADDRESS INPUT BUFFER AND LEVEL SHIFTER
DECODERS
MULTIPLEX SWITCHES
TRUTH TABLE A3 X L L L L L L L L H H H H H H H H A2 X L L L L H H H H L L L L H H H H A1 X L L H H L L H H L L H H L L H H A0 X L H L H L H L H L H L H L H L H EN H L L L L L L L L L L L L L L L L "ON" CHANNEL None 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
2
HS-1840ARH-T Die Characteristics
DIE DIMENSIONS: (2820µm x 4080µm x 483µm ±25.4µm) 111 x 161 x 19mils ±1mil METALLIZATION: Type: Al Si Cu Thickness: 16.0kÅ ±2kÅ SUBSTRATE POTENTIAL: Unbiased (DI) BACKSIDE FINISH: Silicon PASSIVATIO N: Type: Nitride (Si3N4) over Silox (SiO2) Nitride Thickness: 4.0kÅ ±0.5kÅ Silox Thickness: 12.0kÅ ±1.3kÅ WORST CASE CURRENT DENSITY: < 2.0e5 A/cm 2 TRANSISTOR COUNT: 407 PROCESS: Radiation Hardened Silicon Gate, Dielectric Isolation
Metallization Mask Layout
HS-1840ARH-T
IN7 IN6 IN5 IN4 IN3 IN2 IN1
IN8 ENABLE
A0 -V
A1
O UT
A2
+V
A3
VREF IN16 G ND
IN1 5
IN1 4
IN1 3
IN1 2
IN1 1
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com 3
IN1 0
IN9
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