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Details, datasheet, quote on part number:HUF76112SK8
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Datasheet text preview:
HUF76112SK8
TM
D a ta Sheet
Ap r i l 2000
F i l e Number
4834.1
7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET
The HUF76112SK8 is an Application-Specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance results in lower driver and lower switching losses, thereby increasing the overall system efficiency.
Features
· 7.5A, 30V - rDS(ON) = 0.026, VGS = 10V - rDS(ON) = 0.033, VGS = 5V · PWM Optimized for Synchronous Buck Applications · Fast Switching · Low Gate Charge - Qg Total 15nC (Typ) · Low Capacitance - CISS 725pF (Typ) - CRSS 36pF (Typ)
Symbol
SOURCE (1) SOURCE (2) SOURCE (3) GATE (4) DRAIN (8) DRAIN (7) DRAIN (6) DRAIN (5)
Packaging
SO8 (JEDEC MS-012AA)
BRANDING DASH
Ordering Information
5
PART NUMBER HUF76112SK8
PACKAGE MS-012AA
BRAND 76112SK8
1
2
3
4
NOTE: When ordering, use the entire par t number. Add the suffix T to obtain the HUF76112SK8 in tape and reel, e.g., HUF76112SK8T.
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
SYMBOL VDSS VDGR VGS ID ID IDM PD TJ, TSTG TL Tpkg PARAMETER Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20k) (Note 1) Gate to Source Voltage Drain Current Continuous (TA = 25oC, VGS = 10V) (Figure 2) (Note 2) Continuous (TA = 100oC, VGS = 5V) (Note 2) Pulsed Drain Current Power Dissipation (Note 2) Derate Above 25oC Operating and Storage Temperature Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 Thermal Resistance Junction to Ambient 50 152 189
oC/W oC/W oC/W
HUF76112SK8 30 30 ±16 7.5 4.0 Figure 4 2.5 20 -55 to 150 300 260
UNITS V V V A A A W mW/oC
oC oC oC
THERMAL SPECIFICATIONS
Measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 10 second. RJA Measured using FR-4 board with 0.054 in2 (34.8 mm2) copper pad at 1000 seconds. (Figure 23) Measured using FR-4 board with 0.0115 in2 (7.42 mm2) copper pad at 1000 seconds. (Figure 23) NOTES: 1. TJ = 25oC to 125oC. 2. RJA = 50 oC/W
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000 UltraFET® is a registered trademark of Intersil Corporation.
HUF76112SK8
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS ID = 250µA, VGS = 0V (Figure 12) VDS = 25V, VGS = 0V VDS = 25V, VGS = 0V, TA = 150oC Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance VGS(TH) rDS(ON) VGS = VDS, ID = 250µA (Figure 11) ID = 7.5A, VGS = 10V (Figures 9, 10) ID = 4.0A, VGS = 5V (Figure 9) SWITCHING SPECIFICATIONS (VGS = 5V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tON td(ON) tr td(OFF) tf tOFF VDD = 15V, ID = 4.0A VGS = 5V, RGS = 20 (Figures 15, 21, 22) 11 40 35 32 77 100 ns ns ns ns ns ns 1 0.022 0.027 3 0.026 0.033 V IGSS VGS = ±16V 30 1 250 ±100 V µA µA nA TA = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figures 13) 725 325 36 pF pF pF Qg(TOT) Qg(TOT) Qg(TH) Qgs Qgd VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V, ID = 7.5A, Ig(REF) = 1.0mA (Figures 14, 19, 20) 15 7.2 0.74 2.1 2.9 18 8.7 0.9 nC nC nC nC nC tON td(ON) tr td(OFF) tf tOFF VDD = 15V, ID = 7.5A VGS = 10V, RGS = 20 (Figures 16, 21, 22) 7.2 43 52 45 75 145 ns ns ns ns ns ns
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage SYMBOL VSD ISD = 7.5A ISD = 4A Reverse Recovery Time Reverse Recovered Charge trr QRR ISD = 7.5A, dISD/dt = 100A/µs ISD = 7.5A, dISD/dt = 100A/µs TEST CONDITIONS MIN TYP MAX 1.25 1.00 25 14 UNITS V V ns nC
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HUF76112SK8 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 6 0.8 0.6 0.4 0.2 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (oC) TA, AMBIENT TEMPERATURE (oC) 8
VGS = 10V, RJA = 50oC/W
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2
VGS = 5V, RJA = 189oC/W
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE
3 1 THERMAL IMPEDANCE ZJA, NORMALIZED DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 10-2 10-1 100 101 102 103 RJA = 50oC/W
0.1
0.01
SINGLE PULSE 0.001 10-5 10-4 10-3
t , RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
1000
RJA = 50oC/W
TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:
IDM, PEAK CURRENT (A)
100 VGS = 5V VGS = 10V
I = I25
150 - TA 125
10
1 10-5
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-4 10-3 10-2 10-1 t , PULSE WIDTH (s) 100 101 102 103
FIGURE 4. PEAK CURRENT CAPABILITY
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