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Details, datasheet, quote on part number:HV400MJ883
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Datasheet text preview:
HV400MJ/883
August 1997
High Current MOSFET Driver
Description
The HV400MJ/883 is a single monolithic, non-inverting high current driver designed to drive large capacitive loads at high slew rates. The device is optimized for driving single or parallel connected N-Channel power MOSFETs with total gate charge from 5nC to >1000nC. It features two output stages pinned out separately allowing independent control of the MOSFET gate rise and fall times. The current sourcing output stage is an NPN capable of 6A. An SCR provides over 30A of current sinking. The HV400MJ/883 achieves rise and fall times of 54ns and 16ns respectively driving a 10,000pF load. Special features are included in this part to provide a simple, high speed gate drive circuit for power MOSFETs. The HV400MJ/883 requires no quiescent supply current, however, the input current is approximately 15mA while in the high state. With the internal current steering diodes (Pin 7) and an external capacitor, both the timing and MOSFET gate power come from the same pulse transformer; no special external supply is required for high side switches. No high voltage diode is required to charge the bootstrap capacitor. The HV400MJ/883 in combination with the MOSFET and pulse transformer makes an isolated power switch building block for applications such as high side switches, secondary side regulation and synchronous rectification. The HV400MJ/883 is also suitable for driving IGBTs, MCTs, BJTs and small GTOs. The HV400MJ/883 is a type of buffer; it does not have input logic level switching threshold voltages. This single stage design achieves propagation delays of 20ns. The output NPN begins to source current when the voltage on Pin 2 is approximately 2V more positive than the voltage at Pin 8. The output SCR switches on when the input Pin 2 is 1V more negative than the voltage at Pins 3/6. Due to the use of the SCR for current sinking, once the output switches low, the input must not go high again until all the internal SCR charge has dissipated, 0.5µs - 1.5µs later.
Features
· This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. · Fast Fall Times . . . . . . . . . . . . . . . . . . .16ns at 10,000pF · No Supply Current in Quiescent State · Peak Source Current . . . . . . . . . . . . . . . . . . . . . . . . . .6A · Peak Sink Current . . . . . . . . . . . . . . . . . . . . . . . . . . .30A · High Frequency Operation . . . . . . . . . . . . . . . . . 300kHz
Applications
· Switch Mode Power Supplies · DC/DC Converters · Motor Controllers · Uninterruptable Power Supplies
Ordering Information
PART NUMBER HV400MJ/883 TEMP. RANGE (oC) -55 to 125 PACKAGE 8 Ld SBDIP PKG. NO. D8.3
Pinout
HV400MJ/883 (SBDIP) TOP VIEW
Schematic
PIN 1 PIN 2 D3 D2 Q1 D1 PIN 8 PIN 7 PIN 3 D4 D8 R4 R2 PIN 6
V+ SUPPLY 1 INPUT 2 SINK OUTPUT 3 GND 4
8 7 6 5
SOURCE OUTPUT DIODES SINK OUTPUT GND Q2 R3 PIN 4 D6 R1 SCR D7
PIN 5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
File Number
3584.2
1
HV400MJ/883
Absolute Maximum Ratings
Voltage Between Pin 1 and Pins 4/5 . . . . . . . . . . . . . . . . . . . . . 35V Input Voltage Pin 7 (Max) . . . . . . . . . . . . . . . . . . . . . . . .Pin 1 + 1.5V Input Voltage Pin 7 (Min) . . . . . . . . . . . . . . . . . . . . . . . Pin 4/5 -1.5V Input Voltage Pin 2 to Pin 4/5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35V Input Voltage Pin 2 to Pin 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . .-35V Maximum Clamp Current (Pin 7) . . . . . . . . . . . . . . . . . . . . . . . .±300mA
Thermal Information
Thermal Resistance (Typical, Note 1) JA (oC/W) JC (oC/W) SBDIP Package . . . . . . . . . . . . . . . . . . 91 25 Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . 200oC Maximum Storage Temperature Range . . . . . . -65oC < TA < 150oC
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . + 10V to +35V
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. JA is measured with the component mounted on an evaluation PC board in free air. TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: Supply Voltage = +15V, Unless Otherwise Specified PARAMETER Input High Differential Voltage (Pin 2 - Pin 8) SYMBOL VIH CONDITIONS VOUT = 0V, IOUT HI = 10mA GROUP A SUBGROUP 1 2 3 Input Low Differential Voltage (Pin 2 - Pin 3/6) VIL VOUT = 12V, IOUT LO = -3mA 1 2 3 Input High Current IIH VPIN 1, 2 = 30V, I SOURCE = 0 1 2 3 Input Low Current IIL VPIN 2 = -30V 1 2, 3 High Output Voltage VOH VIN = +V, IOUT = 150mA 1 2 3 Output Low Leakage IOL VOUT = 0V, VIN = 0V 1 2, 3 Low Output Voltage VOL VIN = 0V, IOUT = -150mA 1 2 3 Output High Leakage IOH VIN = 15V 1 2 3 Forward Voltage VF ID = 100mA 1 2 3 Reverse Leakage Current IR VR = 30V 1 2, 3 TEMPERATURE (oC) 25 125 -55 25 125 -55 25 125 -55 25 125, -55 25 125 -55 25 125, -55 25 125 -55 25 125 -55 25 125 -55 25 125, -55 MIN 0.6 0.1 1.0 -1.1 -0.95 -1.2 15.0 13.0 18.0 -80 -80 12.1 12.2 11.0 -1.0 -1.0 0.8 0.65 0.9 -1.0 -1.0 -1.0 0.8 0.8 0.8 -1.0 -1.0 MAX 2.8 2.3 3.2 -0.8 -0.6 -0.9 20.0 18.0 25.0 1.0 1.0 13.4 13.5 13.0 50 60 1.0 0.85 1.1 2.0 100 2.0 1.4 1.25 1.6 1.0 1.0 UNITS V V V V V V mA mA mA µA µA V V V µA µA V V V µA µA µA V V V µA µA
2
HV400MJ/883
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS This Table Intentionally Left Blank. See AC Parameter on Table 3. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: Supply Voltage = ±15V, Unless Otherwise Specified (Note 2)
PARAMETER Input High Current fPeak SYMBOL IIHP IOP8 IOP6 QRR tr tf tDR tDF tOR CONDITIONS ISOURCE = 6A, 1µs Pulse, VIN = 9V, VOUT = 0V VIN = 9V, 1µs Pulse, VOUT = 0 VIN = 9V, 1µs Pulse, VOUT = 0 ID = 100mA See Switching Diagram and Test Circuit See Switching Diagram and Test Circuit See Switching Diagram and Test Circuit See Switching Diagram and Test Circuit See Switching Diagram and Test Circuit
TEMPERATURE (oC) 25
MIN 500
MAX 900
UNITS mA
Peak Output Current Peak Output Current Diode (Pin 7) Stored Charge Rise Time Fall Time Delay Time (Lo to Hi) Delay Time (Hi to Lo) Minimum Off Time NOTE:
25 25 25 25 25 25 25 25
4 25 6 37 14 6 7 400
8 35 7 62 21 13 16 1140
A A nC ns ns ns ns ns
2. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group A Test Requirements Groups C and D Endpoints NOTE: 3. PDA applies to Subgroup 1 only. No other subgroups are included in PDA. SUBGROUPS (SEE TABLES 1 AND 2) 1 1 (Note 3), 2 1, 2 1
3
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