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Details, datasheet, quote on part number:IS41LV16100B-60TL
 
 
Part:IS41LV16100B-60TL
Category:Memory => DRAM
Description:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. These features make the IS41LV16100B ideally suited for high-bandwidth graphics, digital signal processing, highperformance computing systems, and peripheral applications. The IS41LV16100B is packaged in a 42-pin 400-mil SOJ and 400-mil 50- (44-) pin TSOP (Type II).
Company:Integrated Silicon Solution
Datasheet:Download IS41LV16100B-60TL datasheet   File size : 148 kB
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