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Part: IS61C1024-20JI
Category:
Memory
-> SRAM
-> Async. SRAM
Description: 128K X 8 High-speed CMOS Static RAM
Company: Integrated Silicon Solution
Datasheet: Download IS61C1024-20JI datasheet File size : 61 kB
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Datasheet text preview:
IS61C1024 IS61C1024L
128K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
· High-speed access time: 12, 15, 20, 25 ns · Low active power: 600 mW (typical) · Low standby power: 500 µW (typical) CMOS standby · Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications · Fully static operation: no clock or refresh required · TTL compatible inputs and outputs · Single 5V (±10%) power supply · Low power version available: IS61C1024L · Commercial and industrial temperature ranges available
ISSI
MAY 1999
®
DESCRIPTION
The ISSI IS61C1024 and IS61C1024L are very high-speed, low power, 131,072-word by 8-bit CMOS static RAMs. They a r e fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61C1024 and IS61C1024L are available in 32-pin 300-mil SOJ, and TSOP (Type I, 8x20), and sTSOP (Type I, 8 x 13.4) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
512 x 2048 MEMORY ARRAY
VCC GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CE1 CE2 OE WE CONTROL CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
SR028-1K 05/12/99
1
IS61C1024 IS61C1024L
PIN CONFIGURATION
32-Pin SOJ
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3
ISSI
PIN CONFIGURATION
32-Pin TSOP (Type 1) (T) and sTSOP (Type 1) (H)
A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3
®
PIN DESCRIPTIONS
A0-A16 Address Inputs Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Write Enable Input Input/Output Power Ground
CE1
CE2
OE WE
I/O0-I/O7 Vcc GND
OPERATING RANGE
Range Commercial Industrial Ambient Temperature 0°C to +70°C 40°C to +85°C VCC 5V ± 10% 5V ± 10%
TRUTH TABLE
Mode Not Selected (Power-down) Output Disabled Read Write
WE
X X H H L
CE1
H X L L L
CE2 X L H H H
OE
X X H L X
I/O Operation High-Z High-Z High-Z DOUT DIN
Vcc Current ISB1, ISB2 ISB1, ISB2 ICC1, ICC2 ICC1, ICC2 ICC1, ICC2
2
Integrated Silicon Solution, Inc. -- 1-800-379-4774
SR028-1J 11/03/98
IS61C1024 IS61C1024L
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM TBIAS T STG PT IOUT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current (LOW) Value 0.5 to +7.0 55 to +125 65 to +150 1.5 20 Unit V °C °C W mA
ISSI
®
Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
C A P A C I T A N C E (1,2)
Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 5 7 Unit pF pF
Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter VOH VOL VIH VIL ILI ILO Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage
(1)
Test Conditions VCC = Min., IOH = 4.0 mA VCC = Min., IOL = 8.0 mA
Min. 2.4 -- 2.2 0.3
Max. -- 0.4 VCC + 0.5 0.8 2 5 2 5
Unit V V V V µA µA
GND VIN VCC GND VOUT VCC Outputs Disabled
Com. Ind. Com. Ind.
2 5 2 5
Note: 1. VIL = 3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
SR028-1K 05/12/99
3
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