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Part: IS61LV12816-8K
Category:
Memory
-> SRAM
-> Async. SRAM
Description: 128K X 16 High-speed CMOS Static RAM With 3.3V Supply
Company: Integrated Silicon Solution
Datasheet: Download IS61LV12816-8K datasheet File size : 228 kB
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Datasheet text preview:
IS61LV12816
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
FEATURES
· · · · · High-speed access time: 10, 12, and 15 ns CMOS low power operation TTL and CMOS compatible interface levels Single 3.3V ± 10% power supply Fully static operation: no clock or refresh required · Three state outputs · Data control for upper and lower bytes · Industrial temperature available
ISSI
DESCRIPTION
®
FEBRUARY 2003
The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61LV12816 is packaged in the JEDEC standard 44pin 400-mil SOJ, 44-pin TSOP (Type II), 44-pin LQFP, and 48-pin mini BGA (6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 16 MEMORY ARRAY
VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT
COLUMN I/O
CE OE WE UB LB
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
CONTROL CIRCUIT
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. C 02/05/2003
1
IS61LV12816
PIN CONFIGURATIONS
44-Pin SOJ (K)
A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC
ISSI
44-Pin TSOP-II (T)
A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC
®
48-Pin mini BGA (B)
1 2 3 4 5 6
44-Pin LQFP (LQ)
A16 A15 A14 A13 A12 A11 A10 A9 OE UB LB
A B C D E F G H
LB I/O8 I/O9 GND VDD I/O14 I/O15 NC
OE UB I/O10 I/O11 I/O12 I/O13 NC A8
A0 A3 A5 NC NC A14 A12 A9
A1 A4 A6 A7 A16 A15 A13 A10
A2 CE I/O1 I/O3 I/O4 I/O5 WE A11
N/C I/O0 I/O2 VDD GND I/O6 I/O7 NC
CE I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7
44 43 42 41 40 39 38 37 36 35 345 33 1 32 2 31 3 30 4 29 5 TOP VIEW 28 6 27 7 26 8 25 9 24 10 23 11 12 13 14 15 16 17 18 19 20 21 22
WE A0 A1 A2 A3 A4 NC A5 A6 A7 A8
I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 NC
2
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. C 02/05/2003
IS61LV12816
PIN DESCRIPTIONS
A0-A16 I/O0-I/O15 CE OE WE LB UB NC VDD GND Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) No Connection Power Ground
ISSI
OPERATING RANGE
Range Commercial Industrial Ambient Temperature 0°C to + 70°C 40°C to + 85°C VDD 3.3V ± 10% 3.3V ± 10%
®
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VDD VTERM TSTG PT IOUT Parameter Power Supply Voltage Relative to GND Terminal Voltage with Respect to GND Storage Temperature Power Dissipation DC Output Current Value 0.3 to 4.0 0.5 to VDD + 0.5 65 to + 150 1.0 ±20 Unit V V °C W mA
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol VOH VOL VIH VI L I LI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage(1) Input LOW Voltage(1) Input Leakage Output Leakage GND VIN VDD GND VOUT VDD, Outputs Disabled Test Conditions VDD = Min., IOH = 4.0 mA VDD = Min., IOL = 8.0 mA Min. 2.4 -- 2 0.3 1 1 Max. -- 0.4 VDD + 0.3 0.8 1 1 Unit V V V V µA µA
Note: 1. VIL (min.) = 0.3V DC; VIL (min.) = 2.0V AC (pulse width - 2.0 ns). VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns).
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. C 02/05/2003
3
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