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Part: IS61LV25616-8TI
Category:
Memory
-> SRAM
-> Async. SRAM
-> 2 Mb
Description: 256K X 16 High Speed Asynchronous CMOS Static RAM With 3.3v Supply
Company: Integrated Silicon Solution
Datasheet: Download IS61LV25616-8TI datasheet File size : 228 kB
Request For quote: Find where to buy IS61LV25616-8TI
Datasheet text preview:
IS61LV256
32K x 8 LOW VOLTAGE CMOS STATIC RAM
FEATURES
· High-speed access times: -- 8, 10, 12, 15, 20 ns · Automatic power-down when chip is deselected · CMOS low power operation -- 345 mW (max.) operating -- 7 mW (max.) CMOS standby · TTL compatible interface levels · Single 3.3V power supply · Fully static operation: no clock or refresh required · Three-state outputs
ISSI
®
OCTOBER 1999
DESCRIPTION The ISSI IS61LV256 is a very high-speed, low power,
32,768-word by 8-bit static RAM. It is fabricated using
ISSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation is reduced to 50 µW (typical) with CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Enable (CE). The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61LV256 is available in the JEDEC standard 28-pin, 300-mil SOJ and the 450-mil TSOP (Type I) package.
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
256 X 1024 MEMORY ARRAY
VCC GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CE OE WE CONTROL CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. I 11/09/99
1
IS61LV256
PIN CONFIGURATION
28-Pin SOJ
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3
ISSI
PIN CONFIGURATION
28-Pin TSOP (Type I)
OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2
®
PIN DESCRIPTIONS
A0-A14 CE OE WE I/O0-I/O7 Vcc GND Address Inputs Chip Enable Input Output Enable Input Write Enable Input Input/Output Power Ground
TRUTH TABLE
Mode Not Selected (Power-down) Output Disabled Read Write WE X H H L CE H L L L OE X H L X I/O Operation High-Z High-Z DOUT DIN Vcc Current ISB1, ISB2 ICC ICC ICC
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VCC VTERM T BIAS T STG PD IOUT Parameter Power Supply Voltage Relative to GND Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value 0.5 to +4.6 0.5 to +4.6 10 to +85 45 to +90 65 to +150 1 ±20 Unit V V °C °C W mA
Com. Ind.
Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. I 11/09/99
IS61LV256
OPERATING RANGE
Range Commercial Industrial Ambient Temperature 0°C to +70°C 40°C to +85°C Speed 8, 10, 12 15, 20 All VCC 3.3V, +10%, 5% 3.3V ± 10% 3.3V + 10%, 5%
ISSI
®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter VO H VO L VI H VIL I LI ILO Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage GND VIN VCC GND VOUT VCC, Outputs Disabled Com. Ind. Com. Ind. Test Conditions VCC = Min., IOH = 2.0 mA VCC = Min., IOL = 4.0 mA Min. 2.4 -- 2.2 0.3 1 5 1 5 Max. -- 0.4 VCC + 0.3 0.8 1 5 1 5 Unit V V V V µA µA
Notes: 1. VIL (min.) = 0.3V (DC); VIL (min.) = 2.0V (pulse width 2.0 ns). VIH (max.) = VCC + 0.5V (DC); VIH (max.) = Vcc + 2.0V (pulse width 2.0 ns). 2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-8 ns(2) Sym. Parameter ICC ISB1 Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., CE = VIL IOUT = 0 mA, f = fMAX VCC = Max., VIN = VIH or VIL CE VIH, f = 0 VCC = Max., CE VCC 0.2V, VIN > VCC 0.2V, or VIN 0.2V, f = 0 Com. Ind. Com. Ind. Com. Ind.
M i n . Max.
-10 ns(2)
M i n . Max.
-12 ns
M i n . Max.
-15 ns
M i n . Max.
-20 ns
M i n . Max. Unit
-- 120 ---- -- 15 ---- --2 ----
-- 110 -- 120 -- 10 -- 20 --2 --5
-- 100 -- 110 -- 10 -- 20 --2 --5
-- 90 -- 100 -- 10 -- 20 --2 --5
-- 80 -- 90 -- 10 -- 20 --2 --5
mA mA
ISB2
mA
Notes: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Shaded area = PREPRODUCTION AVAILABILITY.
CAPACITANCE(1,2)
Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 5 Unit pF pF
Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. I 11/09/99
3
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