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Part: IS61LV3216L-15K
Category:
Memory
-> SRAM
-> Async. SRAM
Description: 32K X 16 Low Voltage CMOS Static RAM With 3.3V Supply
Company: Integrated Silicon Solution
Datasheet: Download IS61LV3216L-15K datasheet File size : 106 kB
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Datasheet text preview:
IS61LV3216L
32K x 16 LOW VOLTAGE CMOS STATIC RAM
FEATURES
· High-speed access time: 10, 12, 15, and 20 ns · CMOS low power operation -- 130 mW (typical) operating -- 150 µW (typical) standby · TTL compatible interface levels · Single 3.3V + 10%, 5% power supply for 10 and 12 ns · Single 3.3V ± 10% power supply for 15 and 20 ns · Fully static operation: no clock or refresh required · Three state outputs · Industrial temperature available · Available in 44-pin 400-mil SOJ package and 44-pin TSOP (Type II)
ISSI
®
DECEMBER 2000
DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM
organized as 32,768 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 150 µW (typical) with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory.A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61LV3216L is packaged in the JEDEC standard 44-pin 400-mil SOJ and 44-pin TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
32K x 16 MEMORY ARRAY
VCC GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT
COLUMN I/O
CE OE WE UB LB CONTROL CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. A 12/19/00
1
IS61LV3216L
PIN CONFIGURATIONS
44-Pin SOJ
NC A14 A13 A12 A11 CE I/O0 I/O1 I/O2 I/O3 Vcc GND I/O4 I/O5 I/O6 I/O7 WE A10 A9 A8 A7 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A0 A1 A2 OE UB LB I/O15 I/O14 I/O13 I/O12 GND Vcc I/O11 I/O10 I/O9 I/O8 NC A3 A4 A5 A6 NC
ISSI
44-Pin TSOP (TYPE II)
NC A14 A13 A12 A11 CE I/O0 I/O1 I/O2 I/O3 Vcc GND I/O4 I/O5 I/O6 I/O7 WE A10 A9 A8 A7 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
®
A0 A1 A2 OE UB LB I/O15 I/O14 I/O13 I/O12 GND Vcc I/O11 I/O10 I/O9 I/O8 NC A3 A4 A5 A6 NC
PIN DESCRIPTIONS
A0-A14 I/O0-I/O15 CE OE WE Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input LB UB NC Vcc GND Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) No Connection Power Ground
TRUTH TABLE
Mode Not Selected Output Disabled Read WE X H X H H H L L L CE H L L L L L L L L OE X H X L L L X X X LB X X H L H L L H L UB X X H H L L H L L I/O PIN I/O0-I/O7 I/O8-I/O15 High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN Vcc Current ISB1, ISB2 ICC ICC
Write
ICC
2
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. A 12/19/00
IS61LV3216L
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VCC VTERM TSTG PT IOUT Parameter Supply Voltage with Respect to GND Terminal Voltage with Respect to GND Storage Temperature Power Dissipation DC Output Current (LOW) Value 0.5 to +4.6 0.5 to Vcc + 0.5 65 to +150 1.0 20 Unit V V °C W mA
ISSI
®
1 2 3 4
VCC 15 ns, 20 ns 3.3V ± 10% 3.3V ± 10%
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
Range Commercial Industrial Ambient Temperature 0°C to + 70°C 40°C to + 85°C VCC 10 ns, 12 ns 3.3V +10%, 5% 3.3V +10%, 5%
5
Unit V V V V µA µA
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage GND - VIN - VCC GND - VOUT - VCC, Outputs Disabled Test Conditions VCC = Min., IOH = 4.0 mA VCC = Min., IOL = 8.0 mA Min. 2.4 -- 2 0.3 1 2 Max. -- 0.4 VCC + 0.3 0.8 1 2
6 7 8 9
Note: 1. VIL (min.) = 3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter ICC ISB1 Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., IOUT = 0 mA, f = fMAX VCC = Max., VIN = VIH or VIL CE · VIH , f = 0 VCC = Max., CE · VCC 0.2V, VIN · VCC 0.2V, or VIN - 0.2V, f = 0 Com. Ind. Com. Ind. Com. Ind. -10 ns Min. Max. -- -- -- -- -- -- 130 -- 10 -- 1 -- -12 ns Min. Max. -- -- -- -- -- -- 120 130 10 10 1 1 -15 ns Min. Max. -- -- -- -- -- -- 110 120 10 10 1 1 -20 ns Min. Max. -- -- -- -- -- -- 100 110 10 10 1 1 Unit mA mA
10 11 12
ISB2
mA
Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. A 12/19/00
3
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