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Details, datasheet, quote on part number:27N80
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| Part: | 27N80 |
| Category: | Discrete => IGBTs (Insulated Gate Bipolar Transistors) => Medium Voltage 600-1199 Volts |
| Description: | HiperFET(tm) Power MOSFETs N-channel Enhancement Mode Avalanche Rated, High Dv/dt, Low TRR |
| Company: | IXYS Corporation |
| Datasheet: | Download 27N80 datasheet File size : 166 kB |
| Request For quote: | Find where to buy 27N80
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Datasheet text preview:
Not for New Designs VDSS ID25 27 A 25 A 27 A 25 A RDS(on) 0.30 0.35 0.30 0.35
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFK IXFK IXFN IXFN
27N80 25N80 27N80 25N80
800 800 800 800
V V V V
TO-264 AA (IXFK) Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Symbol Test Conditions 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 300 0.9/6 10 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings IXFK IXFN 800 800 ±20 ±30 27N80 2 7 25N80 2 5 27N80 108 25N80 100 27N80 1 4 25N80 1 3 30 5 500 800 800 ±20 ±30 27 25 108 100 14 13 30 5 520 150 -55 ... +150 2500 3000 V V V V A A A A A A mJ V/ns W °C °C °C °C V~ V~ Features
· · · · · ·
G
D
(TAB)
S
miniBLOC, SOT-227 B (IXFN) E153432
D G
S
G S S S D
TC= 25°C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C
G = Gate S = Source
D = Drain TAB = Drain
-55 ... +150
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Mounting torque Terminal connection torque
1.5/13 N m / l b . i n . 1.5/13 N m / l b . i n . 30 g
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 0.096 2 -0.214 ±2 0 0 TJ = 25°C TJ = 125°C 25N80 27N80 500 2 0.35 0.30 4.5 V %/K V %/K nA µA mA
· ·
International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier
V DSS VGH(th) IG S S I DSS RDS(on)
VGS = 0 V, ID = 3 mA VDSS temperature coefficient VDS = VGS, ID = 8 mA VGS(th) temperature coefficient VGS = ±20 VDC, VDS = 0 VDS = 0.8 · VDSS VGS = 0 V VGS = 10 V, ID = 0.5 · ID25 Pulse test, t 300 µs, duty cycle d 2 %
Applications
· · · · ·
DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls
Advantages
· · ·
Easy to mount Space savings High power density
© 2002 IXYS All rights reserved
95561D(6/02)
IXFK 25N80 IXFN 25N80
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 16 28 S pF pF pF ns ns ns ns nC nC nC K/W K/W 0.24 0.05 K/W K/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
IXFK 27N80 IXFN 27N80
TO-264 AA Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK
VDS = 10 V; ID = 0.5 · ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz
7930 8400 9740 630 146 712 790 192 240 30 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 80 75 40 320 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 3 8 120 TO-264 AA TO-264 AA miniBLOC, SOT-227 B miniBLOC, SOT-227 B 0.15 350 400 46 56 130 142 0.25 RG = 1 (External),
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Min.
Inches Max.
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 27N80 25N80 27N80 25N80 27 25 108 100 1.5 250 400 2 17 A A A A V ns ns µC A
miniBLOC, SOT-227 B
IF = 100 A, VGS = 0 V, Pulse test, t 300 µs, duty cycle d 2 % IF = IS, -di/dt = 100 A/µs, VR = 100 V T J =25°C TJ =125°C T J =25°C
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 5,486,715 5,381,025 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 6,306,728B1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481
IXFK 25N80 IXFN 25N80
40
TJ = 25 C
O
IXFK 27N80 IXFN 27N80
40
VGS = 9V 8V 7V 6V TJ = 125OC VGS = 9V 8V 7V 6V
30
30
ID - Amperes
ID - Amperes
5V
5V
20
20
10
4V
10
4V
0
0 0 2 4 6 8 10
0
4
8
12
16
20
VDS - Volts
VDS - Volts
Figure 1. Output Characteristics at 25OC
2.6 2.4
VGS = 10V
Figure 2. Output Characteristics at 125OC
2.6
RDS(ON) - Normalized
RDS(ON) - Normalized
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10
TJ = 125OC
2.4 2.2 2.0 1.8 1.6 1.4 1.2
VGS = 10V
ID = 27A
TJ = 25OC
ID = 13.5A
20
30
40
50
1.0 25
50
75
100
125
150
ID - Amperes
TJ - Degrees C
Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID
30 25
IXF_25N80 IXFN27N80
Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ
30 25
ID - Amperes
IXFK27N80
15 10 5 0 -50
ID - Amperes
20
20 15 10 5
TJ = 125oC TJ = 25oC
-25
0
25
50
75
100 125 150
0
2
3
4
5
6
7
TC - Degrees C
VGS - Volts
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
© 2002 IXYS All rights reserved
IXFK 25N80 IXFN 25N80
12 10
VDS =300V Vds = 400V ID=327A = 0A = 0mA IG=11mA
IXFK 27N80 IXFN 27N80
10000
Ciss
VGS - Volts
8 6 4 2 0
Capacitance - pF
f = 1MHz
Coss
1000
Crss
0
100
200
300
400
500
100
0
5
10
15
20
25
30
35
40
Gate Charge - nC
VDS - Volts
Figure 7. Gate Charge
100
Figure 8. Capacitance Curves
80
ID - Amperes
60
TJ = 125OC
40
20
TJ = 25OC
0 0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 9. Forward Voltage Drop of the Intrinsic Diode
VSD - Volts
1
D=0.5
R(th)JC - K/W
0.1
D=0.2 D=0.1 D=0.05
0.01 D=0.02
D=0.01 Single pulse
D = Duty Cycle
0.001 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
Figure 10. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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