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Part: 40N30BD1S
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> Low Voltage < 600 Volts
Description: Hiperfast(tm) Igbt
Company: IXYS Corporation
Datasheet: Download 40N30BD1S datasheet File size : 138 kB
Request For quote: Find where to buy 40N30BD1S
Datasheet text preview:
HiPerFASTTM IGBT
IXGH40N30BD1
VCES IC25 VCE(sat) tfi
= 300 V = 60 A = 2.4 V = 75 ns
Symbol V CES VCGR V GES V GEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH TC = 25°C
Maximum Ratings 300 300 ±20 ±30 60 40 160 ICM = 80 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C
TO-247 AD
G
C
C (TAB) E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features · International standard package JEDEC TO-247 AD · High current IGBT and paralled FRED in one package · Low leakage current FRED · Newest generation HDMOSTM process · MOS Gate turn-on - drive simplicity Applications · · · · · AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (M3)
1.13/10 Nm/lb.in.
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 300 2.5 TJ = 25°C TJ = 125°C V V mA mA nA V
BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 250 mA, VCE = VGE
Advantages · High power density (two devices in one package) · Switching speed for high frequency applications · Easy to mount with 1 screw, (isolated mounting screw hole)
5 200 1 ±100 2.4
VCE = 0.8 · VCES VG E = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
97508C (6/98)
© 2000 IXYS All rights reserved
1-4
IXGH40N30BD1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 20 28 2500 VCE = 25 V, VGE = 0 V, f = 1 MHz 210 60 145 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 23 50 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 1.0 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 1.0 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG 25 45 75 75 0.3 25 45 0.5 90 130 0.6 180 230 1.4 170 35 75 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXGH) Outline
gf s C ies Coes C res Qg Q ge Q gc td(on) t ri td(off) t fi Eoff td(on) t ri Eon td(off) t fi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 %
1.5 2.49
0.62 K/W 0.25 K/W
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.8 1.5 30 1.8 V A ns 1 K/W
IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V; TJ =100°C IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXGH40N30BD1
100
TJ = 25°C
200
VGE = 15V 13V 11V
9V TJ = 25°C VGE = 15V
13V
11V
80
160
IC - Amperes
IC - Amperes
60
7V
120 80
9V
40 20
5V
7V
40
5V
0 0 1 2 3 4 5
0
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
100
TJ = 125°C
VCE (sat) - Normalized
80
VGE = 15V 13V 11V
9V
1. 6
VGE = 15V IC = 80A
1. 4 1. 2 1. 0
IC = 20A IC = 40A
IC - Amperes
60 40 20 0 0 1 2 3 4
7V
0. 8 0. 6 0. 4
5V
5
25
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig. 3. High Temperature Output Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
100
VCE = 10V
10000
f = 1Mhz
80 Capacitance - pF
IC - Amperes
1000
Ciss
60 40 20 0 2 3 4 5 6 7 8 9 10
TJ = 125°C TJ = 25°C
100
Coss
Crss
10 0 5 10 15 20 25 30 35 40
VGE - Volts
VCE-Volts
Fig. 5. Admittance Curves
Fig. 6. Capacitance Curves)
© 2000 IXYS All rights reserved
3-4
IXGH40N30BD1
1.25
TJ = 125°C
2. 5
RG = 4.7
E(ON)
1. 50
TJ = 125°C IC = 80A
3. 0 2. 5
1.00
E(ON) - millijoules
2. 0 1. 5
E(OFF)
1. 25
E(ON)
E(ON) - millijoules
E(OFF) - milliJoules
E(OFF) - millijoules
E(OFF)
1. 00 0. 75
E(ON)
2. 0 1. 5 1. 0 0. 5
E(OFF)
0.75 0.50 0.25 0.00
0 20 40 60
1. 0 0. 5 0. 0 80
0. 50 0. 25 0. 00
E(ON)
IC = 40A IC = 20A
E(OFF)
0. 0
0
10
20
30
40
50
60
IC - Amperes
RG - Ohms
Fig. 7. Dependence of EON and EOFF on IC.
18 15
IC = 40A VCE = 150V
Fig. 8. Dependence of EON and EOFF on RG.
100
IC - Amperes
VGE - Volts
12 9 6 3 0 0 25 50 75 100 125 150 175
10
TJ = -55 to +125°C
RG = 4.7
1
dV/dt < 5V/ns
0. 1 0 50 100 150 200 250 300
Qg - nanocoulombs
VCE - Volts
Fig. 9. Gate Charge
1
Fig. 10. Turn-off Safe Operating Area
D=0.5
ZthJC (K/W)
0. 1
D=0.2 D=0.1 D=0.05 D=0.02
0. 01
D=0.01
Single pulse
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
0. 1
1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
4-4
Others parts begin by 40
40-1 40-2 40-3
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