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Details, datasheet, quote on part number:40N30S
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| Part: | 40N30S |
| Category: | Discrete => IGBTs (Insulated Gate Bipolar Transistors) => Low Voltage < 600 Volts |
| Description: | Hiperfast(tm) Igbt |
| Company: | IXYS Corporation |
| Datasheet: | Download 40N30S datasheet File size : 96 kB |
| Request For quote: | Find where to buy 40N30S
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Datasheet text preview:
HiPerFASTTM IGBT
VCES
IC25
VCE(sat) 1.8 V 2.1 V 2.4 V
tfi 220ns 120ns 75 ns
IXGH 40N30/S 300 V 60 A IXGH 40N30A/S 300 V 60 A IXGH 40N30B/S 300 V 60 A
Symbol V CES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Clamped inductive load, L = 30 µH TC = 25°C
Maximum Ratings 300 300 ±20 ±30 60 40 160 ICM = 80 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A
TO-247 SMD*
G E
C (TAB)
TO-247 AD
C (TAB)
A W °C °C °C °C °C
G
C
E
G = Gate, C = Collector, E = Emitter, TAB = Collector * Add suffix letter "S" for surface mountable package
Features · International standard packages JEDEC TO-247 AD and surface mountable TO-247 SMD · High current handling capability · Newest generation HDMOSTM process · MOS Gate turn-on - drive simplicity Applications · · · · · AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
Maximum lead temperature for soldering 300 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 2 6 0 Md Weight Mounting torque (M3) TO-247 AD TO-247 SMD
1.13/10 Nm/lb.in. 6 4 g g
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 300 2.5 5 200 1 ±100 40N30 40N30A 40N30B 1.8 2.1 2.4 V V µA mA nA V V V
BVCES VGE(th) I CES IG E S VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VCE = VGE TJ = 25°C TJ = 125°C
VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Advantages · High power density · Suitable for surface mounting · Switching speed for high frequency applications · Easy to mount with 1 screw, (isolated mounting screw hole)
© 2001 IXYS All rights reserved
97506E(11/01)
IXGH 40N30 IXGH 40N30A IXGH 40N30B IXGH 40N30S IXGH 40N30AS IXGH 40N30BS
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 20 28 2500 VCE = 25 V, VGE = 0 V, f = 1 MHz 210 60 145 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 23 50 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = Roff = 1.0 Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 40N30 40N30A 40N30B 40N30 40N30A 40N30B 40N30 40N30A 40N30B 25 40 170 100 75 230 120 75 1.6 0.75 0.3 25 Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = Roff = 1.0 Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 40N30 40N30A 40N30B 40N30 40N30A 40N30B 40N30 40N30A 40N30B 40 0.3 250 150 90 350 220 130 3.3 1.6 0.6 170 35 75 S
1 2 3
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff
IC = IC90; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 %
pF pF pF nC nC nC ns ns ns ns ns ns ns ns mJ mJ mJ ns ns mJ 500 n s 300 n s 180 n s 600 n s 330 n s 230 n s 4.8 m J 2.4 m J 1.4 m J 0.62 K/W
1 - Gate 2 - Drain (collector) Dim. A A1 A2 b b1 C D E e L L1 L2 L3 L4 P Q R S 3 - Source (Emitter 4 - Drain (collector Inches Min. .190 .090 .075 .045 .075 .024 .819 Max. .205 .100 .085 .055 .084 .031 .840
Dim.
td(on) tri Eon td(off) tfi Eoff
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .1 8 5 .2 0 9 .087 .102 .0 5 9 .0 9 8 .0 4 0 .0 5 5 .065 .084 .113 .123 .0 1 6 . 0 3 1 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .1 4 0 . 1 4 4 0.232 0.252 .1 7 0 . 2 1 6 242 BSC
TO-247 SMD Outline
RthJC RthCK Min. Recommended Footprint (Dimensions in inches and mm) 0.25
K/W
Millimeter Min. Max. 4.83 2.29 1.91 1.14 1.19 0.61 20.80 5.21 2.54 2.16 1.40 2.13 0.80 21.34
15.75 16.13 5.45 BSC 4.90 2.70 2.10 0.00 1.90 5.10 2.90 2.30 0.10 2.10
.620 .635 .215 BSC .193 .106 .083 .000 .075 .201 .114 .091 .004 .083
3.55 3.65 5.59 6.20 4.32 4.83 6.15 BSC
.140 .144 .220 .244 .170 .190 .242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
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