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Details, datasheet, quote on part number:40N60A
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| Part: | 40N60A |
| Category: | Discrete => IGBTs (Insulated Gate Bipolar Transistors) => Low Voltage < 600 Volts |
| Description: | Low Vce(sat) Igbt High Speed Igbt |
| Company: | IXYS Corporation |
| Datasheet: | Download 40N60A datasheet File size : 94 kB |
| Request For quote: | Find where to buy 40N60A
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Datasheet text preview:
V CES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V
I C25 75 A 75 A
V CE(sat) 2.5 V 3.0 V
Short Circuit SOA Capability
Symbol V CES V CGR V GES V GEM I C25 I C90 ICM SSOA (RBSOA) tS C (SCSOA) PC TJ TJ M Ts t g Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TJ = 125°C, RG = 2.7 Clamped inductive load, L = 30 µH V GE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 , non repetitive T C = 25°C
Maximum Ratings 600 600 ±20 ±30 75 40 150 ICM = 80 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A µs
TO-247 AD (IXSH)
G
C
E
TO-204 AE (IXSM)
C
W °C °C °C
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Mounting torque
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6g 300 °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 7 50 1 ±100 40N60 40N60A 2.5 3.0 V V µA mA nA V V
Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz
q q q q q q
BVCES VGE(th) I CES I GES VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 4 mA, VCE = VGE
V C E = 0.8 · VCES V GE = 0 V V C E = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Applications AC motor speed control Uninterruptible power supplies (UPS) Welding
q q q
q
q
Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density
© IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670
IXYS reserves the right to change limits, test conditions and dimensions.
91546F (4/96)
IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
IXSH 40N60 IXSM 40N60 IXSH 40N60A IXSM 40N60A
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 16 23 200 4500 VCE = 25 V, VGE = 0 V, f = 1 MHz 350 90 190 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 45 88 Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = 2.7 Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125° C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased R G 40N60 40N60A 40N60 40N60A 40N60 40N60A 40N60 40N60A 40N60 40N60A 55 170 400 400 200 5.0 2.5 55 170 1.7 340 600 340 12 6 1000 525 1500 700 260 60 120 S A pF pF pF nC nC nC ns ns ns ns ns mJ mJ ns ns mJ ns ns ns ns mJ mJ 0.42 K / W 0.25 K/W TO-204AE Outline
1 = Gate 2 = Collector 3 = Emitter Tab = Collector
TO-247 AD Outline
gfs I C(on) Ci e s C oes C res Qg Qge Qgc td(on) tr i td ( o f f ) tfi Eoff td(on) tr i Eon td ( o f f ) tfi Eoff RthJC Rt h C K
IC = IC90; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 % VGE = 15 V, VCE = 10 V
1 = Gate 2 = Emitter Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXSH 40N60 IXSM 40N60 IXSH 40N60A IXSM 40N60A
Fig. 1 Saturation Characteristics
80 70 60
T J = 25°C VGE = 15V 13V
Fig. 2
200 180 160 140 120 100 80 60 40 20 0 5 0 2 4
T J = 25°C
Output Characterstics
VGE = 15V
IC - Amperes
50 40 30 20 10
IC - Amperes
11V
13V
11V
9V 7V
9V 7V
0
0
1
2
3
4
6
8
10 12 14 16
18 20
VCE - Volts
VCE - Volts
10 9 8 7
Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage T = 25°C
J
Fig. 4
1.5 1.4
Temperature Dependence of Output Saturation Voltage
VGE=15 V
IC = 80A
VCE(sat) - Normalized
1.3 1.2 1.1 1.0 0.9 0.8
IC = 20A IC = 40A
VCE - Volts
6 5 4 3 2 1 0 8 9 10 11 12 13 14 15
IC = 20A IC = 40A IC = 80A
0.7 -5 0
-2 5
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig. 5 Input Admittance
80
VCE = 10V Threshold Voltage
Fig. 6
1.3
Temperature Dependence of Breakdown and
BV CES IC = 3mA
60
BV / V GE(th) - Normalized
70
1.2 1.1 1.0 0.9 0.8 0.7 -5 0
IC - Amperes
50 40 30 20 10 0
T J = 125°C T J = - 40°C TJ = 25°C
V GE8th) IC = 4mA
4
5
6
7
8
9
10
11
12
13
-2 5
0
25
50
75
100 125 150
VGE - Volts
© IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670
TJ - Degrees C
IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
IXSH 40N60 IXSM 40N60 IXSH 40N60A IXSM 40N60A
Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 1000
TJ = 125°C RG = 10
Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 12 9 6
1000 800
T J = 125°C IC = 40A Eo ff (-A), hi-speed
10 8 6 4 2 0
Tfi - nanoseconds
tfi - nanoseconds
hi-speed
Eof f - millijoules
Eo ff (-A)
600 400 200 0
500
tfi (-A)
250 0
0 10 20 30 40 50
hi-speed
tfi (-A), hi-speed
3 0
60
70
80
0
10
20
30
40
50
IC - Amperes
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
15
IC = 40A
Fig.10
100
Turn-Off Safe Operating Area
12
VCE = 480V
10
T J = 125°C RG = 22 dV/dt < 6V/ns
9 6 3 0
IC - Amperes
VGE - Volts
1
0.1
0.01 0 50 100 150 200 250 0 100 200 300 400 500 600 700
Qg- nCoulombs
VCE - Volts
Fig.11 Transient Thermal Impedance
1
Thermal Response - K/W
D=0.5
0.1 D=0.2
D=0.1 D=0.05 D=0.02
D = Duty Cycle
0.01 D=0.01
Sing le Pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
Time - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
Eoff - millijoules
750
© IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
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