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Details, datasheet, quote on part number:40N60B
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| Part: | 40N60B |
| Category: | Discrete => IGBTs (Insulated Gate Bipolar Transistors) => Low Voltage < 600 Volts |
| Description: | High Speed Igbt |
| Company: | IXYS Corporation |
| Datasheet: | Download 40N60B datasheet File size : 57 kB |
| Request For quote: | Find where to buy 40N60B
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Datasheet text preview:
High Speed IGBT
Short Circuit SOA Capability
I X S H 40N60B VCES = = I X S T 40N60B IC25 VCE(sat) = tfi typ =
600 V 75A 2.2V 100 ns
Preliminary data
Symbol V CES VCGR V GES V GEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, VCC= 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 40 150 ICM = 80 @ 0.8 VCES 10 280 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W °C °C °C · International standard packages · Guaranteed Short Circuit SOA capability · Low VCE(sat) - for low on-state conduction losses · High current handling capability · MOS Gate turn-on - drive simplicity · Fast Fall Time for switching speeds up to 50 kHz Applications · AC and DC motor speed control · Uninterruptible power supplies (UPS) · Welding Advantages · Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) · High power density Features
G = Gate E = Emitter TAB = Collector G E (TAB) (TAB) G C E TO-247 AD (IXSH)
TO-268 (D3) ( IXST)
1.13/10 Nm/lb.in. 6 300 g °C
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 7 25 1 ±100 2.2 V V mA mA nA V
B V CES V GE(th) ICES I GES V CE(sat)
IC IC
= 250 mA, VGE = 0 V = 4 mA, VCE = VGE
VCE = 0.8 · VCES VG E = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98521B (7/00)
© 2000 IXYS All rights reserved
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I X S H 40N60B I X S T 40N60B
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 16 23 3700 VCE = 25 V, VGE = 0 V, f = 1 MHz 280 80 190 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 45 90 50 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = 2.7 W 50 110 120 1.8 55 Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 2.7 W 170 1.7 190 180 2.0 200 200 2.6 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.45 K/W (IXSH40N60B) 0.25 K/W
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXSH) Outline
gf s C ies Coes C res Qg Q ge Q gc td(on) t ri td(off) t fi Eoff td(on) t ri Eon td(off) t fi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 %
1.5 2.49
TO-268AA (D3 PAK)
Dim.
Min. Recommended Footprint
A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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