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Details, datasheet, quote on part number:40N60BD1
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| Part: | 40N60BD1 |
| Category: | Discrete => IGBTs (Insulated Gate Bipolar Transistors) => Low Voltage < 600 Volts |
| Description: | Igbt With Diode Plus247 (tm) Package |
| Company: | IXYS Corporation |
| Datasheet: | Download 40N60BD1 datasheet File size : 48 kB |
| Request For quote: | Find where to buy 40N60BD1
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Datasheet text preview:
IGBT with Diode
PLUS247
TM
package
IXSK 40N60BD1 IXSX 40N60BD1
Short Circuit SOA Capability
Preliminary data
VCES IC25 VCE(sat) tfi(typ)
= 600 = 75 = 2.2 = 120
V A V ns
Symbol V CES VCGR V GES V GEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive TC = 25°C
Maximum Ratings 600 600 ±20 ±30 75 40 150 ICM = 80 @ 0.8 VCES 10 280 -55 ... +150 150 -55 ... +150 V V
PLUS 247TM (IXSX)
C (TAB) G C E
V V A A A A ms W °C °C °C
G = Gate, E = Emitter
TO-264 AA (IXSK)
G
C
E C = Collector,
Mounting torque
(TO-264)
0.9/6 Nm/lb.in. 300 10 5 °C g g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-264 PLUS247
Features · International standard packages · Guaranteed Short Circuit SOA capability · Medium frequency IGBT and antiparallel FRED in one package · Latest generation HDMOSTM process · Low VCE(sat) - for minimum on-state conduction losses · MOS Gate turn-on - drive simplicity · Fast Recovery,low leakage Epitaxial Diode - soft recovery with low IRM Applications · AC motor speed control · DC servo and robot drives · DC choppers · Uninterruptible power supplies (UPS) · Switch-mode and resonant-mode power supplies Advantages · PLUS 247TM package for clip or spring mounting · Space savings (two devices in one package) · Reduces assembly time and cost
98573A (7/00)
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 150°C 7 650 5 ±100 2.2 V V mA mA nA V
B V CES V GE(th) ICES I GES V CE(sat)
IC IC
= 1 mA, VGE = 0 V = 4 mA, VCE = VGE
VCE = 0.8 · VCES VG E = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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IXSK 40N60BD1 IXSX 40N60BD1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 16 23 3700 VGS = 0 V, VDS = 25 V, f = 1 MHz 440 60 190 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 45 88 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG 50 50 110 120 1.8 50 50 2.2 190 180 2.6 200 200 2.6 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.48 K/W 0.15 K/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 AA Outline
gf s C iss Coss C rss Qg Q ge Q gc td(on) t ri td(off) t fi Eoff td(on) t ri Eon td(off) t fi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 %
PLUS247TM (IXSX)
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.8 2 35 2.5 V A ns 0.75 K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190
IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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