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Details, datasheet, quote on part number:41N60
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| Part: | 41N60 |
| Category: | Discrete => IGBTs (Insulated Gate Bipolar Transistors) => Low Voltage < 600 Volts |
| Description: | Ultra-low V Ce(sat) Igbt |
| Company: | IXYS Corporation |
| Datasheet: | Download 41N60 datasheet File size : 36 kB |
| Request For quote: | Find where to buy 41N60
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Datasheet text preview:
Ultra-Low VCE(sat) IGBT
IXGH 41N60
VCES = 600 V IC25 = 76 A VCE(sat) = 1.6 V
Symbol VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 76 41 152 ICM = 76 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
TO-247 AD
G
C
E
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Features · International standard package JEDEC TO-247 AD · Newest generation HDMOSTM process · Low VCE(sat) - for minimum on-state conduction losses · High current handling capability · MOS Gate turn-on - drive simplicity Applications
Mounting torque (M3)
1.13/10 Nm/lb.in. 6 300 g °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5 200 1 ±100 1.6 V V mA mA nA V
B V CES V GE(th) ICES I GES V CE(sat)
IC IC
= 250 mA, VGE = 0 V = 250 mA, VCE = VGE
· · · · · ·
AC motor speed control DC servo and robot drives DC choppers Solid state relays Lighting controls Temperature regulators
VCE = 0.8 · VCES VG E = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Advantages · Easy to mount with 1 screw (isolated mounting screw hole) · Low losses, high efficiency · High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
97546(1/98)
© 2000 IXYS All rights reserved
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IXGH 41N60
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 19 28 2750 VCE = 25 V, VGE = 0 V, f = 1 MHz 206 55 120 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG 25 40 30 30 600 450 8 40 40 0.3 800 600 15 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.62 K/W 0.25 K/W
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXGH) Outline
gf s C ies Coes C res Qg Q ge Q gc td(on) t ri td(off) t fi Eoff td(on) t ri Eon td(off) t fi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 %
1.5 2.49
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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