Details, datasheet, quote on part number: 45N120
Part45N120
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => High Voltage 1200 Volts <
TitleHigh Voltage 1200 Volts <
DescriptionHigh Voltage, Low Vce(sat) Igbt
CompanyIXYS Corporation
DatasheetDownload 45N120 datasheet
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Features, Applications

Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight

Test Conditions to 150°C; RGE 1 MW Continuous Transient = 25°C, limited by leads 1 ms VGE 2.7 W Clamped inductive load, 30 mH VGE 15 V, VCE = 0.6 VCES, 22 W, non repetitive = 25°C

Maximum lead temperature for soldering mm (0.062 in.) from case for 10 s

International standard package JEDEC TO-247 High frequency IGBT with guaranteed Short Circuit SOA capability Fast Fall Time for switching speeds to 20 kHz 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity

Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 125°C V
Applications

AC motor speed control DC servo and robot drive Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Welding

Easy to mount with 1 screw (isolated mounting screw hole) High power density
IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 170 4150 VCE 25 V, VGE = 1 MHz = IC90, VGE 15 V, VCE = 0.5 VCES Inductive load, = IC90, VGE 100 mH VCE = 0.8 VCES, 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, = IC90, VGE 100 mH VCE = 0.8 VCES, 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased mJ 0.42 K/W 0.25 K/W

gfs IC(on) C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:


 

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