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Details, datasheet, quote on part number:8P50
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| Part: | 8P50 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel |
| Description: | Standard Power MOSFET P-channel Enhancement Mode Avalanche Rated |
| Company: | IXYS Corporation |
| Datasheet: | Download 8P50 datasheet File size : 77 kB |
| Request For quote: | Find where to buy 8P50
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Datasheet text preview:
VDSS
ID25 RDS(on)
Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH 7P50 IXTH 8P50
-500V -7 A 1.5 -500V -8 A 1.2
Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C 7P50 8P50 7P50 8P50 7P50 8P50
Maximum Ratings -500 -500 ±20 ±30 -7 -8 -28 -32 -7 -8 30 180 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ W °C °C °C °C Nm/lb.in. g
TO-247 AD
D (TAB)
G = Gate, S = Source,
D = Drain, TAB = Drain
Features
· International standard package · Low R HDMOS process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS)
TM DS (on)
JEDEC TO-247 AD
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque
300 1.13/10 6
· Low package inductance (<5 nH)
- easy to drive and to protect
rated
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. -500 0.054 -3.0 -0.122 ±100 TJ = 2 5 ° C TJ = 1 2 5 ° C -200 -1 -5.0 V %/K V %/K nA µA mA
Applications
V DSS VGS(th) IG S S I DSS RDS(on)
V GS = 0 V, ID = -250 µA BVDSS Temperature Coefficient V D S = VGS, ID = -250 µA VGS(th) Temperature Coefficient V GS = ±20 VDC, VDS = 0 V D S = 0.8 VDSS V GS = 0 V V GS = -10 V, ID = 0.5 ID25
· High side switching · Push-pull amplifiers · DC choppers · Automatic test equipment
Advantages
· Easy to mount with 1 screw · Space savings · High power density
(isolated mounting screw hole)
7P50 8P50 RDS(on) Temperature Coefficient
1.5 1.2 0.6 %/K
© 2001 IXYS All rights reserved
94534E (6/01)
IXTH 7P50 IXTH 8P50
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4 5 3400 V GS = 0 V, VDS = -25 V, f = 1 MHz 450 175 33 V GS = -10 V, VDS = 0.5 VDSS ID = 0.5 ID25 RG = 4.7 (External) 27 35 35 130 V GS = -10 V, VDS = 0.5 VDSS ID = 0.5 ID25 32 64 0.7 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
1 2 3
TO-247 AD Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
V D S = -10 V; ID = ID25, pulse test
Dim.
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions V GS = 0
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 7P50 8P50 7P50 8P50 -7 -8 -28 -32 -3 400 A A A A V ns
Millimeter Min. M a x . A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. M a x . .1 8 5 .2 0 9 .087 .102 .0 5 9 .0 9 8 .0 4 0 .0 5 5 .065 .084 .113 .123 .0 1 6 . 0 3 1 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .1 4 0 . 1 4 4 0.232 0.252 .1 7 0 . 2 1 6 242 BSC
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V, Pulse test, t 300 µs, duty cycle d 2 % IF = IS, di/dt = 100 A/µs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
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