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Part: CS29-08IO1C
Category:
Discrete
-> Thyristors
-> PCT (Phase Control Thyristors)
Description:
Company: IXYS Corporation
Datasheet: Download CS29-08IO1C datasheet File size : 243 kB
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Datasheet text preview:
CS 29
Phase Control Thyristor ISOPLUS220 T M
Electrically Isolated Back Surface
Preliminary Data Sheet
VRSM VDSM V 800 1200 VRRM VDRM V 800 1200 CS 29-08io1C CS 29-12io1C
G
VRRM = 800/1200 V IT(RMS) = 35 A IT(AV)M = 23 A
Type
A C
ISOPLUS220TM
1
2
3
Isolated back surface* * Patent pending
Symbol IT(RMS) IT(AV)M IT S M
Conditions TVJ = TVJM TC = 95°C; 180° sine (IT(RMS) current limit) TVJ = 45°C; VR = 0 V TVJ = TVJM; VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 35 23 200 215 175 185 200 195 155 145 150 A A A A A A A2s A2s A2s A2s A/µs
Features · Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500 V electrical isolation · Low cathode-to-tab capacitance (15 pF typical) · Planar passivated chips · Epoxy meets UL 94V-0 · High performance glass passivated chip · Long-term stability of leakage current and blocking voltage Applications · Motor control · Power converter · AC power controller · Light and temperature control · SCR for inrush current limiting in power supplies or AC drive Advantages · Space and weight savings · Simple mounting
I2t
TVJ = 45°C; VR = 0 V TVJ = TVJM; VR = 0 V
(di/dt)cr
TVJ = TVJM; repetitive, IT = 40 A f = 50 Hz; tP = 200 µs; VD = 2/3 VDRM; IG = 0.2 A; non repetitive, IT = IT(AV)M diG/dt = 0.2 A/µs TVJ = TVJM; VDR = 2/3 VDRM; RGK = ; method 1 (linear voltage rise) TVJ = TVJM; IT = IT(AV)M; tP = 30 µs tP = 300 µs
500 1000 5 2.5 0.5 10 -40...+150 150 -40...+150
A/µs V/µs W W W V °C °C °C
(dv/dt)cr PGM PGAV VRGM TV J TVJM Tstg VISOL TL FC Weight
50/60 Hz RMS; IISOL 1 mA 1.6 mm from case; 10 s Mounting force
2500
V~ 260 11...65 / 2.4...11 2 °C N/lb g
IXYS reserves the right to change limits, conditions and dimensions.
98839A (04/28)
© 2003 IXYS All rights reserved
CS 29
Symbol IR, ID VT VT0 rT VGT IGT VGD IGD IL IH tgd RthJC RthCK a Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT = 45 A; TVJ = 25°C Characteristic Values 2 1.5 0.82 16.5 1.0 1.2 65 80 0.2 5 150 50 2 1.2 0.6 50 mA V V m V V mA mA V mA mA mA µs
1000 0.1 1 10 100 1000 mA 10000
IG
4: PGAV = 0.5 W IGD, TVJ =125°C 5: PGM = 5 W 6: PGM = 10 W
10 V
VG
1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C
For power-loss calculations only (TVJ = 125°C) VD = 6 V; VD = 6 V; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C
1
1 2
3 4
5
6
TVJ = TVJM; VD = 2/3 VDRM TVJ = 25°C; tP = 10 µs; IG = 0.2; diG/dt = 0.2 A/µs TVJ = 25°C; VD = 6 V; RGK = TVJ = 25°C; VD = ½ VDRM; IG = 0.2 A; diG/dt = 0.2 A/µs DC current DC current Max. acceleration, 50 Hz
Fig. 1 Gate trigger range
typical
K/W K/W m/s2
tgd
TVJ = 25°C
µs
typ.
See CS 30..io1 data sheet for electrical characteristic curves.
100
Limit
10
ISOPLUS220 OUTLINE
1 10
100
IG
mA
1000
Fig. 2 Gate controlled delay time tgd
Note: All terminals are solder plated. 1 - Cathode 2 - Anode 3 - Gate
© 2003 IXYS All rights reserved
CS 29
100 A IT 80 ITSM 300 400 A
50Hz, 80%VRRM
2000 A2s
VR = 0 V
TVJ = 45°C
TVJ = 45°C
It
2
60 200 40 1000
TVJ = 125°C
TVJ = 125°C TVJ = 125°C
100
20
TVJ = 25°C
0 0.0
0.5
1.0 VT
1.5
V 2.0
0 0.001
500 0.01 0.1 t s 1 1 2 3 4 5 6 7 ms 10 89 t
Fig. 3
140 W 120 PT 100 80 60 40 20 0 0
Forward characteristics
Fig. 4 Surge overload current ITSM: crest value, t: duration
80 A
Fig. 5 I2t versus time (1-10 ms)
R thKA :
0.1 K/W 0.5 K/W 1 K/W 2 K/W 4 K/W 10 K/W
IT(AV)M
70 60 50 40 30 20 10 0
DC 180° sin 120° 60° 30°
DC 180° sin 120° 60° 30°
10
20
30
40
50
60 IT(AV)M
70 A 0
25
50
75
100
Tamb
125 °C 150
0
20
40
60
80 100 120 °C Tcase
Fig. 6
Power dissipation versus forward current and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
© 2003 IXYS All rights reserved
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