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Part: DSA9-16F
Category:
Discrete
-> Diodes & Rectifiers
-> Protection
Description: Avalanche Diode
Company: IXYS Corporation
Datasheet: Download DSA9-16F datasheet File size : 53 kB
Request For quote: Find where to buy DSA9-16F
Datasheet text preview:
DS 9 DSA 9
Rectifier Diode Avalanche Diode
VRRM = 800-1800 V IF(RMS) = 18 A IF(AV)M = 11 A
VRSM V 900 1300 1700 1900
V(BR)minÿx VRRM V 1300 1750 1950 V 800 1200 1600 1800
Standard Types DS 9-08F DS 9-12F
Avalanche Types DSA 9-12F DSA 9-16F DSA 9-18F
A
C
DO-203 AA
C
A M5 A = Anode C = Cathode
x Only for Avalanche Diodes
Symbol IF(RMS) IF(AVM) PRSM IFSM
Test Conditions TVJ = TVJM Tcase = 150°C; 180° sine DSA types, TVJ = TVJM, tp = 10 ms TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 18 11 4.5 250 265 200 220 310 295 200 190 -40...+180 180 -40...+180 A A kW A A A A A2s A2s A2s A2s °C °C °C Nm lb.in. g
Features International standard package, JEDEC DO-203 AA Planar glassivated chips
q q
Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies
q q q q
I2t
TVJ = 45°C VR = 0 TVJ = TVJM VR = 0
q q q
T VJ TVJM Tstg Md Weight Symbol IR VF VT0 rT RthJC RthJH dS dA a Test Conditions TVJ = TVJM; VR = VRRM IF = 36 A; TVJ = 25°C Mounting torque
q
Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits
2.2-2.8 19-25 5
Dimensions in mm (1 mm = 0.0394")
Characteristic Values £ £ 3 1.4 0.85 15 2.0 2.17 3.0 2.0 2.0 100 mA V V mW K/W K/W K/W mm mm m/s2
For power-loss calculations only TVJ = TVJM DC current 180° sine DC current Creepage distance on surface Strike distance through air Max. allowable acceleration
Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
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DS 9 DSA 9
50 A 40 IF 30 300 1000 800 A2s
typ.
lim.
A 250 IFSM 200
VR = 0 V
50Hz, 80%VRRM TVJ = 45°C TVJ = 180°C
I2t
600
400
TVJ= 180°C TVJ= 25°C
20
150
100 10
T VJ = 4 5 ° C
200
50
T V J =180°C
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1V 1.6 .4 VF
0 10-3
100 10-2 10-1 100 s t 101 1 2 3 4 5 6 7 ms10 89 t
Fig. 1 Forward characteristics
25 W
Fig. 2 Surge overload current IFSM: crest value, t: duration
Fig. 3 I2t versus time (1-10 ms)
25 A
RthJA :
20 PF 15
8.3 K/W 13 K/W (CU80x80) 18 K/W
20 IF(AV)M 15
DC d = 180° sin d = 120° d= 60° d= 30°
10
DC 180° sin 120° 60° 30°
10
5
5
0 0 5 10 15 IF(AV)M A 20 0 50 100
Tamb
0 150 °C 200 0 50 100 150 200 °C 250 Tcase
Fig. 4 Power dissipation versus forward current and ambient temperature
5 K/W 4 ZthJH 3
30° 60° 120° 180° DC
Fig. 5 Max. forward current at case temperature RthJH for various conduction angles d: d DC 180° 120° 60° 30° RthJH (K/W) 3.0 3.35 3.56 4.0 4.64
2
Constants for ZthJH calculation: i 1 2 3 4 Rthi (K/W) 0.095 0.515 1.39 1.0 ti (s) 0.00032 0.0102 0.360 2.30
1
0 10-3
10-2
10-1
100
101
102
103 s t
104
Fig. 6 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
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