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Part: DSAI110-12F
Category:
Discrete
-> Diodes & Rectifiers
-> Protection
Description: Avalanche Diode
Company: IXYS Corporation
Datasheet: Download DSAI110-12F datasheet File size : 53 kB
Request For quote: Find where to buy DSAI110-12F
Datasheet text preview:
DSSK 80-0045B
Power Schottky Rectifier
with common cathode
IFAV = VRRM= VF =
2x40 A 45 V 0.45 V
VRSM V 45
VRRM V 45
Type
A
C
A
TO-247 AD
DSSK 80-0045B
A C A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol I FRMS IFAV IFAV IF S M EAS IA R (dv/dt)cr T VJ TVJM Tstg Ptot Md Weight Symbol IR VF
Conditions TC = 125°C; rectangular, d = 0.5 TC = 125°C; rectangular, d = 0.5; per device TVJ = 45°C; tp = 10 ms (50 Hz), sine IAS = 20 A; L = 180 µH; TVJ = 25°C; non repetitive VA =1.5 · VRRM typ.; f=10 kHz; repetitive
Maximum Ratings 70 40 80 750 57 2 1000 -55...+150 150 -55...+150 A A A A mJ A V/µs °C °C °C W Nm g
Features · International standard package · Very low VF · Extremely low switching losses · Low IRM-values · Epoxy meets UL 94V-0
Applications · Rectifiers in switch mode power supplies (SMPS) · Free wheeling diode in low voltage converters
TC = 25°C mounting torque typical Conditions TVJ = 25°C VR = VRRM TVJ = 100°C VR = VRRM IF = 40 A; IF = 40 A; IF = 80 A; TVJ = 125°C TVJ = 25°C TVJ = 125°C 0.25
155 0.8...1.2 6
Advantages · High reliability circuit operation · Low voltage peaks for reduced protection circuits · Low noise switching · Low losses
Characteristic Values typ. max. 30 250 0.45 0.51 0.69 0.8 mA mA V V V K/W K/W
Dimensions see Outlines.pdf
RthJC RthCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions.
304
© 2003 IXYS All rights reserved
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DSSK 80-0045B
100 A IF
10000 mA
10000 pF
IR
1000 TVJ=150°C
125°C
CT
100 10
TVJ = 150°C 125°C 25°C 100°C
1000
10
75°C 50°C 25°C
1
TVJ= 25°C
1 0.0
0.1 0.2 0.4 VF 0.6 V 0 10 20 30 40 V 50 VR
100 0 10 20 30 VR 40 V
Fig. 1 Maximum forward voltage drop characteristics
80 A 70 60 IF(AV) 50 40 d=0.5 DC
Fig. 2 Typ. value of reverse current IR versus reverse voltage VR
45 W 40 35 P(AV) 30 25 20 d= DC 0.5 0.33 0.25 0.17 0.08
Fig. 3 Typ. junction capacitance CT versus reverse voltage VR
10000
A IFSM
1000
30 20 10 0 0 40 80 TC 120 °C 160
15 10 5 0 0 10 20 30 40 50 IF(AV)
60 A
100 10
100
1000 µs 10000 tP
Fig. 4 Average forward current IF(AV) versus case temperature TC
1
Fig. 5 Forward power loss characteristics
K/W ZthJC
D=0.5 0.33 0.25 0.17
0.08
Single Pulse
0.1
0.05 0.001
DSSK 80-0045B
0.01
0.1
1s
10 t
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
304
© 2003 IXYS All rights reserved
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