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Part: DSAI35-16A
Category:
Discrete
-> Diodes & Rectifiers
-> Protection
Description: Avalanche Diode
Company: IXYS Corporation
Datasheet: Download DSAI35-16A datasheet File size : 53 kB
Request For quote: Find where to buy DSAI35-16A
Datasheet text preview:
DS 35 DSA 35
DSI 35 DSAI 35
Rectifier Diode Avalanche Diode
VRRM = 800-1800 V IF(RMS) = 80 A IF(AV)M = 49 A
VRSM V 900 1300 1300 1700 1900
V(BR)minÿx VRRM V 1300 1750 1950 V 800 1200 1200 1600 1800
Anode on stud DS 35-08A DS 35-12A DSA 35-12A DSA 35-16A DSA 35-18A
Cathode on stud DSI 35-08A DSI 35-12A DSAI 35-12A DSAI 35-16A DSAI 35-18A
DO-203 AB
C A DS DSA A C DSI DSAI
x Only for Avalanche Diodes A = Anode C = Cathode
1/4-28UNF
Symbol IF(RMS) IF(AVM) PRSM IFSM
Test Conditions TVJ = TVJM Tcase = 100°C; 180° sine DSA(I) types, TVJ = TVJM, tp = 10 ms TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 80 49 11 650 690 600 640 2100 2000 1800 1700 -40...+180 180 -40...+180 A A kW A A A A As A2s A2s A2s °C °C °C Nm lb.in. g
2
Features International standard package, JEDEC DO-203 AB (DO-5) Planar glassivated chips
q q
It
2
TVJ = 45°C VR = 0 TVJ = TVJM VR = 0
Applications High power rectifiers Field supply for DC motors Power supplies
q q q
T VJ TVJM Tstg Md Weight Mounting torque
Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits
q q q q
4.5-5.5 40-49 15
Dimensions in mm (1 mm = 0.0394")
Symbol IR VF VT0 rT RthJC RthJH dS dA a
Test Conditions TVJ = TVJM; VR = VRRM IF = 150 A; TVJ = 25°C
Characteristic Values £ £ 4 1.55 0.85 4.5 1.05 1.25 4.05 3.9 100 mA V V mW K/W K/W mm mm m/s2
For power-loss calculations only TVJ = TVJM DC current DC current Creepage distance on surface Strike distance through air Max. allowable acceleration
Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-2
DS 35 DSA 35
250 A 1000 A 900 10000
DSI 35 DSAI 35
50Hz, 80% VRRM
8000 A2s 6000 I2t 4000
VR = 0 V
typ.
200 IF 150
lim.
800 IFSM 700 600
TVJ= 180°C TVJ= 25°C
100
500 400 300
TVJ = 45°C
TVJ = 180°C
2000
TVJ = 45°C TVJ = 180°C
1000 10-2 10-1 t s 100 1 2 3 4 5 6 7 ms10 89 t
50
200 100
0 0.5
1.0
1.5 VF
2.0 V
0 10-3
Fig. 1 Forward characteristics
100 W 80 PF 60
Fig. 2 Surge overload current IFSM: crest value, t: duration
Fig. 3 I2t versus time (1-10 ms)
60 A
RthJA :
1.5 K/W 1.9 K/W 2.3 K/W 3.9 K/W
50 IF(AV)M 40
30
40
DC 180° sin 120° 60° 30°
20
20
10
0 0 20 40 60 IF(AV)M 80 A 0 0 50 100
Tamb
0 150 °C 200 0 40 80 120 160 °C 200 Tcase
Fig. 4 Power dissipation versus forward current and ambient temperature
2.0 K/W 1.6 ZthJH 1.2
Fig. 5 Max. forward current at case temperature 180° sine
RthJH for various conduction angles d: d DC 180° 120° 60° 30° RthJH (K/W) 1.25 1.37 1.47 1.74 2.08
0.8
Constants for ZthJH calculation:
0.4
i 1 2 3 4
Rthi (K/W) 0.10 0.25 0.70 0.20
ti (s) 0.0012 0.1181 0.6540 2.0
0.0 10-3
10-2
10-1
100
101 t
s
102
Fig. 6 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
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