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Part: DSAI75-12B
Category:
Discrete
-> Diodes & Rectifiers
-> Protection
Description: Avalanche Diode
Company: IXYS Corporation
Datasheet: Download DSAI75-12B datasheet File size : 53 kB
Request For quote: Find where to buy DSAI75-12B
Datasheet text preview:
DS 75 DSA 75
DSI 75 DSAI 75
Rectifier Diode Avalanche Diode
VRRM = 800-1800 V IF(RMS) = 160 A IF(AV)M = 110 A
VRSM V 900 1300 1300 1700 1900
V(BR)minÿx VRRM V 1300 1760 1950 V 800 1200 1200 1600 1800
Anode on stud DS 75-08B DS 75-12B DSA 75-12B DSA 75-16B DSA 75-18B
Cathode on stud DSI 75-08B DSI 75-12B DSAI 75-12B DSAI 75-16B DSAI 75-18B
DO-203 AB
C A DS DSA A C DSI DSAI
x Only for Avalanche Diodes 1/4-28UNF A = Anode C = Cathode
Symbol IF(RMS) IF(AV)M PRSM IFSM
Test Conditions TVJ = TVJM Tcase = 100°C; 180° sine DSA(I) types, TVJ = TVJM, tp = 10 ms TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 160 110 20 1400 1500 1250 1310 9800 9450 7820 7210 -40...+180 180 -40...+180 A A kW A A A A A2s A2s A2s A2s °C °C °C Nm lb.in. g Features International standard package, JEDEC DO-203 AB (DO-5) Planar glassivated chips
q q
I2t
TVJ = 45°C VR = 0 TVJ = TVJM VR = 0
Applications High power rectifiers Field supply for DC motors Power supplies
q q q
q q q
T VJ TVJM Tstg Md Weight Mounting torque
q
Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits
2.4-4.5 21-40 21
Dimensions in mm (1 mm = 0.0394")
Symbol IR VF VT0 rT RthJC RthJH dS dA a
Test Conditions TVJ = TVJM; VR = VRRM IF = 150 A; TVJ = 25°C
Characteristic Values £ £ 6 1.17 0.75 2 0.5 0.9 4.05 3.9 100 mA V V mW K/W K/W mm mm m/s2
For power-loss calculations only TVJ = TVJM DC current DC current Creepage distance on surface Strike distance through air Max. allowable acceleration
Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
744
© 2000 IXYS All rights reserved
1-2
DS 75 DSA 75
200 A IF 150 1500 105
DSI 75 DSAI 75
typ.
lim.
A IFSM
50Hz, 80%VRRM
A2s
VR = 0 V TVJ = 45°C TVJ = 180°C
6 TVJ = 45°C
I2t
TVJ= 180°C TVJ= 25°C
100
1000
4
500 50
TVJ = 180°C
2
0 0.0
0.5
1.0 VF
1.5 V
0 10-3
104 10-2 10-1 t s 100 1 2 3 4 5 6 7 ms10 89 t
Fig. 1 Forward characteristics
200 W
Fig. 2 Surge overload current IFSM: crest value, t: duration
Fig. 3 I2t versus time (1-10 ms)
200 A
RthJA :
150 PF
1 K/W 1.2 K/W 1.6 K/W 2 K/W 3 K/W 4 K/W
IF(AV)M 150
DC 180° sin 120° 60° 30°
100
100
50
DC 180° sin 120° 60° 30°
50
0 0 50 100 150 IF(AV)M A 0 200 50 100
Tamb
0 150 °C 200 0 40 80 120 160 °C 200 Tcase
Fig. 4 Power dissipation versus forward current and ambient temperature
1.5 K/W ZthJH 1.0
30° 60° 120° 180° DC
Fig. 5 Max. forward current at case temperature
RthJH for various conduction angles d: d DC 180° 120° 60° 30° RthJH (K/W) 0.900 1.028 1.085 1.272 1.476
0.5
Constants for ZthJH calculation: i
0.0 10-3
Rthi (K/W) 0.0731 0.1234 0.4035 0.3000
ti (s) 0.0015 0.0237 0.4838 1.5
10-2
10-1
100
101
Fig. 6 Transient thermal impedance junction to heatsink
102 t
s
103
1 2 3 4
© 2000 IXYS All rights reserved
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