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Part: IXBF40N140
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: High Voltage BimosFET(tm) in High Voltage ISOplus I4-pac(tm): 1400v, 28a
Company: IXYS Corporation
Datasheet: Download IXBF40N140 datasheet File size : 373 kB
Request For quote: Find where to buy IXBF40N140
Datasheet text preview:
Advanced Technical Information
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 40N140 IC25 IXBF 40N160 VCES
VCE(sat) tf
= 28 A = 1400/1600 V = 6.2 V = 40 ns
1 5
IGBT Symbol V CES V GES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 15/0 V; RG = 22 W; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions TVJ = 25°C to 150°C IXBF 40N140 IXBF 40N160 Maximum Ratings 1400 1600 ± 20 28 16 40 0.8VCES 250 V V V A A A W
Features · High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability · ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 6.2 6.9 4 0.8 500 200 60 300 40 3300 130 2.5 7.1 8 0.4 V V V mA mA nA ns ns ns ns pF nC V 0.5 K/W
Applications · switched mode power supplies · DC-DC converters · resonant converters · lamp ballasts · laser generators, x ray generators
V CE(sat) V GE(th) ICES I GES td(on) tr td(off) tf C ies QGon VF RthJC
IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 960 V; IC = 25 A VGE = 15/0 V; RG = 22 W VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 20 A (reverse conduction); IF = 20A
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-4
031
IXBF 40N140 IXBF 40N160
Component Symbol TV J Tstg VISOL FC Symbol dS,dA dS,dA RthCH Weight IISOL £ 1 mA; 50/60 Hz mounting force with clip Conditions C pin - E pin pin - backside metal with heatsink compound Conditions Maximum Ratings -55...+150 -55...+125 2500 20...120 °C °C V~ N Dimensions in mm (1 mm = 0.0394")
Characteristic Values min. typ. max. 7 5.5 0.15 9 mm mm K/W g
© 2000 IXYS All rights reserved
2-4
IXBF 40N140 IXBF 40N160
70
TJ = 25°C
VGE = 17V 15V
70
TJ = 125°C
VGE = 17V 15V
60
60
IC - Amperes
IC - Amperes
50 40 30 20 10 0 0 2 4 6 8 10 12 14
13V
50 40 30 20 10 0
13V
16
18
0
2
4
6
8
10
12
14
16
18
VCE - Volts
VCE - Volts
Fig. 1 Typ. Output Characteristics
70
VCE = 20V
Fig. 2 Typ. Output Characteristics
70 60
60
IC - Amperes
IF - Amperes
50 40
TJ = 125°C TJ = 25°C
50 40 30
TJ = 25°C TJ = 125°C
30 20 10 0 5 6 7 8 9 10 11 12 13
20 10 0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGE - Volts
VF - Volts
Fig. 3 Typ. Transfer Characteristics
Fig. 4 Typ. Characteristics of Reverse Conduction
100
16 14 12
VCE = 600V IC = 20A
ICM - Amperes
VGE - Volts
10 8 6 4 2 0 0 20 40 60 80 100 120 140
10
TJ = 125°C VCEK < VCES
1
IXBF 40N140 IXBF 40N160
0.1 0 400 800 1200 1600
QG - nanocoulombs
VCE - Volts
Fig. 5 Typ. Gate Charge characteristics
Fig. 6 Reverse Based Safe Operating Area RBSOA
© 2000 IXYS All rights reserved
3-4
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