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Details, datasheet, quote on part number:IXBF9N140G
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Datasheet text preview:
Advanced Technical Information
High Voltage B I M O S F E T TM
in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 G IC25 IXBF 9N160 G VCES
VCE(sat) tf
=7A = 1400/1600 V = 4.9V = 70 ns
1 5
IGBT Symbol V CES V GES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 10/0 V; RG = 27 ; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions TVJ = 25°C to 150°C IXBF 9N140 IXBF 9N160 Maximum Ratings 1400 1600 ± 20 7 4 12 0 . 8 V CES 70 V V V A A A W
Features · High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability · ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 4.9 5.6 3.5 0.1 500 140 200 120 70 550 34 3.6 7 5.5 0.1 V V V mA mA nA ns ns ns ns pF nC V 1.75 K/W
VCE(sat) VGE(th) I CES IG E S td(on) tr td(off) tf C ies QGon VF RthJC
IC = 5 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.5 mA; VGE = VCE VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 960 V; IC = 5 A VGE = 10/0 V; RG = 27 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 10 V; IC = 5 A (reverse conduction); IF = 5 A
Applications · switched mode power supplies · DC-DC converters · resonant converters · lamp ballasts · laser generators, x ray generators
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
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IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
101
IXBF 9N140 G IXBF 9N160 G
Component Symbol TV J Tstg VISOL FC Symbol dS,dA dS,dA RthCH Weight IISOL 1 mA; 50/60 Hz mounting force with clip Conditions pin 2 - pin 5 pin - backside metal with heatsink compound Conditions Maximum Ratings -55...+150 -55...+125 2500 20...120 °C °C V~ N Dimensions in mm (1 mm = 0.0394")
Characteristic Values min. typ. max. 7 5.5 0.15 9 mm mm K/W g
© 2000 IXYS All rights reserved
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IXBF 9N140 G IXBF 9N160 G
30
TJ = 25°C VGE = 17V
30
15V 13V 11V TJ = 125°C VGE = 17V 15V 13V 11V 9V
25
25
20
9V
IC - Amperes
7V
IC - Amperes
20 15 10 5 0
7V
15 10 5 0 0 2 4 6 8 10 12 14 16 18
0
2
4
6
8
10
12
14
16
18
VCE - Volts
VCE - Volts
Fig. 1 Typ. Output Characteristics
30
VCE = 20V
Fig. 2 Typ. Output Characteristics
30 25
25
IF - Amperes
TJ = 25°C
IC - Amperes
TJ = 125°C
TJ = 25°C
TJ = 125°C
20 15 10 5 0 4 6 8 10 12 14
20 15 10 5 0
0
2
4
6
8
10
VGE - Volts
VF - Volts
Fig. 3 Typ. Transfer Characteristics
Fig. 4 Typ. Characteristics of Reverse Conduction
15
16 14 12
VCE = 600V IC = 5A
ICM - Amperes
VGE - Volts
10 8 6 4 2 0 0 10 20 30 40 50
10
TJ = 125°C VCEK < VCES
5
IXBF 9N140G IXBF 9N160G
0 0 400 800 1200 1600
QG - nanocoulombs
VCE - Volts
Fig. 5 Typ. Gate Charge characteristics
Fig. 6 Reverse Biased Safe Operating Area RBSOA
© 2000 IXYS All rights reserved
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